| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-831 - C4-834 | |
| DOI | https://doi.org/10.1051/jphyscol:19814183 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-831-C4-834
DOI: 10.1051/jphyscol:19814183
Department of Physics Nanjing University, Nanjing, China
J. Phys. Colloques 42 (1981) C4-831-C4-834
DOI: 10.1051/jphyscol:19814183
INVESTIGATION INTO THE CONDUCTION MECHANISM OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS
Yu-liang He and Hsiang-na LiuDepartment of Physics Nanjing University, Nanjing, China
Abstract
This paper studies the structure property and conduction mechanism of ordinary CVD amorphous silicon films deposited in a range of temperature 550-750°C, around the crystallization temperature. It is found that the transport processes of localized states as well as the band tail exist still in the Si films during their transition from amorphous to polycrystalline one. It is also found that as the deposited temperature increases, the grain size increases and the tailing width narrows down. An empirical function of grain size and tailing width has been given.