| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-783 - C4-786 | |
| DOI | https://doi.org/10.1051/jphyscol:19814171 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-783-C4-786
DOI: 10.1051/jphyscol:19814171
Institut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich, D-5170 Jülich, F.R.G.
J. Phys. Colloques 42 (1981) C4-783-C4-786
DOI: 10.1051/jphyscol:19814171
HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS
W. Beyer and H. WagnerInstitut für Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich, D-5170 Jülich, F.R.G.
Abstract
The results of a systematic study of hydrogen evolution from glowdischarge a-Si : H films are presented. The influence of doping, film thickness and substrate temperature is discussed. Two evolution processes can be discerned : A low temperature effusion attributed to the release of H2 through voids or cracks from polysilane-like intergrain material and an evolution at high temperatures from compact a-Si : H material, dominated by atomic diffusion of hydrogen. Addition of diborane leads to a pronounced shift of the evolution peaks of both processes to lower temperatures and to a change of the hydrogen content.