| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-687 - C4-690 | |
| DOI | https://doi.org/10.1051/jphyscol:19814152 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-687-C4-690
DOI: 10.1051/jphyscol:19814152
Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaragi 305, Japan
J. Phys. Colloques 42 (1981) C4-687-C4-690
DOI: 10.1051/jphyscol:19814152
A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMS
A. Matsuda, M. Matsumura, K. Nakagawa, S. Yamasaki and K. TanakaElectrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaragi 305, Japan
Abstract
We propose a simplified model for the deposition kinetics of GD a-Si : H as well as a-Si : F : H films taking into account a dissociation energy of a chemical bond of diatomic molecules. The model explains successfully (1) the reason why no film is deposited from the pure SiF4 glow discharge and (2) a strong correlation between an emission intensity ratio of [H]/[SiH] in a plasma and an ir absorption ratio of dihydride to monohydride modes of a deposited film.