| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-843 - C4-847 | |
| DOI | https://doi.org/10.1051/jphyscol:19814186 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-843-C4-847
DOI: 10.1051/jphyscol:19814186
Max-Planck-Institut für Kernphysik, D-6900 Heidelberg, F.R.G.
J. Phys. Colloques 42 (1981) C4-843-C4-847
DOI: 10.1051/jphyscol:19814186
THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON
M. Reinelt and S. KalbitzerMax-Planck-Institut für Kernphysik, D-6900 Heidelberg, F.R.G.
Abstract
The diffusion of K, Rb, and Cs has been studied by implantation of low energy ions into a-Si and using high-resolution Rutherford backscattering for measurement of the resulting profiles. The diffusion is many orders of magnitude slower than in c-Si. Trapping and detrapping effects have been observed. Trap depth and average distance have been estimated. a-Si appears as an inhomogeneous solid consisting of a disordered bulk with voids embedded.