| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-729 - C4-732 | |
| DOI | https://doi.org/10.1051/jphyscol:19814159 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-729-C4-732
DOI: 10.1051/jphyscol:19814159
Department of Electronics, Kanazawa University, Kanazawa 920, Japan
J. Phys. Colloques 42 (1981) C4-729-C4-732
DOI: 10.1051/jphyscol:19814159
NMR AND ESR STUDIES ON ANNEALING EFFECTS IN a-Si : F : H AND a-Si : H
S. Ueda, M. Kumeda and T. ShimizuDepartment of Electronics, Kanazawa University, Kanazawa 920, Japan
Abstract
Measurements of NMR of F in a-Si :F : H and a-Si : F have been carried out and the results are compared with those of H in a-Si : F : H and a-Si : H. Effects of motional narrowing on the linewidth of F NMR in a-Si : F : H show that some fraction of F is incorporated in the form of SiF4 or (SiF2)n which tends to move easily. When samples are annealed, the increase in the ESR center density is remarkable in a-Si : F : H and a-Si : H corresponding to the decrease in the H content, but the increase in the ESR center density is rather small in hydrogen free a-Si : F.