| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-1059 - C4-1062 | |
| DOI | https://doi.org/10.1051/jphyscol:19814232 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1059-C4-1062
DOI: 10.1051/jphyscol:19814232
Semiconductor Physics Institute, Academy of Sciences, Lithuanian SSR, K. Pozelos 52, 232600, Vilnius, USSR
J. Phys. Colloques 42 (1981) C4-1059-C4-1062
DOI: 10.1051/jphyscol:19814232
CONDUCTIVITY RELAXATION IN STRUCTURE Pt-LIQUID V2O5-Pt
A. Aleksiejünas, R. Bareikiené, V. Bondarenko and S. GeciauskasSemiconductor Physics Institute, Academy of Sciences, Lithuanian SSR, K. Pozelos 52, 232600, Vilnius, USSR
Abstract
The voltage current (V-I) characteristics and conductivity relaxation in liquid V2O5 have been investigated. The experimental results in given interpretation show that the asymmetry of V-I characteristics and conductivity relaxation in liquid V2O5 are caused by the re-distribution of the concentration of the oxygen ions in the electric field.