| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-379 - C4-382 | |
| DOI | https://doi.org/10.1051/jphyscol:1981481 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-379-C4-382
DOI: 10.1051/jphyscol:1981481
Philips Research Laboratories, Redhill, Surrey, U.K.
J. Phys. Colloques 42 (1981) C4-379-C4-382
DOI: 10.1051/jphyscol:1981481
THE EFFECT OF ANNEALING AND ILLUMINATION ON THE FIELD EFFECT CONDUCTANCE OF AMORPHOUS SILICON
M.J. Powell, B.C. Easton and D.H. NichollsPhilips Research Laboratories, Redhill, Surrey, U.K.
Abstract
We have measured the effect of white light illumination and annealing to 180°C on the field effect conductance of glow discharge α-Si : H. Annealing produces a change in the off conductance by up to a factor of 30, and moves the threshold field by 2 x 104 Vcm-1. These changes are reproducibly reversed upon illuminating with white light. A major part of the effect of illumination is most likely due to a movement of the Fermi level in the bulk of the material. Annealing to 180°C reverses this effect. Furthermore excess electrons can be trapped at the amorphous silicon-silicon nitride interface by a field assisted trapping mechanism and these are also de-trapped upon annealing to 180°C.