| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-683 - C4-686 | |
| DOI | https://doi.org/10.1051/jphyscol:19814151 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-683-C4-686
DOI: 10.1051/jphyscol:19814151
1 Laboratoire de Photoélectricité, Equipe "Matériaux Amorphes", Faculté des Sciences et Techniques de Saint-Jérôme, 13 rue Poincaré, 13397 Marseille Cedex 13, France
2 Institut de Physique Nucléaire, Université de Lyon I, 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
J. Phys. Colloques 42 (1981) C4-683-C4-686
DOI: 10.1051/jphyscol:19814151
INFLUENCE OF HYDROGEN PARTIAL PRESSURE ON DEPOSITION AND PROPERTIES OF SPUTTERED AMORPHOUS GALLIUM ARSENIDE
L. Alimoussa1, H. Carchano1 and J.P. Thomas21 Laboratoire de Photoélectricité, Equipe "Matériaux Amorphes", Faculté des Sciences et Techniques de Saint-Jérôme, 13 rue Poincaré, 13397 Marseille Cedex 13, France
2 Institut de Physique Nucléaire, Université de Lyon I, 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
Abstract
Thin film of a GaAs H are produced by rf sputtering of a monocrystalline undoped target (ρ ≈ 5 x 107 Ωxcm). We have correlated the hydrogen pressure PH of the discharge with the H concentration CH in the film from nuclear reaction of 15N. Study of growth rate variation with PH shows a decrease from 3 Å/S to about 1 Å/S when hydrogen is added to argon. -a-GaAs-H is strongly absorbent (α > 105 cm-1 at 2 eV). The optical gap E0 increases with PH from 0.91 eV and saturates to 1.45 eV when PH > 40 % of total pressure.