| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-827 - C4-830 | |
| DOI | https://doi.org/10.1051/jphyscol:19814182 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-827-C4-830
DOI: 10.1051/jphyscol:19814182
Fachbereich Physik, Universität Marburg, Renthof 5, F.R.G.
J. Phys. Colloques 42 (1981) C4-827-C4-830
DOI: 10.1051/jphyscol:19814182
INFLUENCE OF CORRELATION EFFECTS ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON
L. Schweitzer, M. Grünewald and H. DerschFachbereich Physik, Universität Marburg, Renthof 5, F.R.G.
Abstract
The influence of correlation effects on the density of states deduced from field-effect and capacitance-voltage measurements are considered. A positive Hubbard U is required to account for the observed Curie-law behaviour of the magnetic susceptibility. Hence, statistics of correlated electrons have to be used rather than Fermi-statistics to calculate the density of states distribution function g(E) from the measured charge density. Within this model g(E) differs appreciably from previously published "field effect" densities.