| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-51 - C4-54 | |
| DOI | https://doi.org/10.1051/jphyscol:1981407 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-51-C4-54
DOI: 10.1051/jphyscol:1981407
Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, England
J. Phys. Colloques 42 (1981) C4-51-C4-54
DOI: 10.1051/jphyscol:1981407
ANDERSON LOCALISATION IN TWO-BAND SYSTEMS
H. AokiCavendish Laboratory, Madingley Road, Cambridge CB3 OHE, England
Abstract
The electronic structure of disordered two-band systems is investigated systematically for the first time to shed light on the nature of localisation in realistic systems. Characteristic localisation in the models including intrinsic semiconductor and hybridised s-d systems is studied by both the direct diagonalisation of the Hamiltonian and the decimation method. We stressed the importance of the inter-band mixing, which produces intrinsic features in the electronic structure arising from interplay of randomness and basic electronic structure.