| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-803 - C4-806 | |
| DOI | https://doi.org/10.1051/jphyscol:19814176 | |
J. Phys. Colloques 42 (1981) C4-803-C4-806
DOI: 10.1051/jphyscol:19814176
ELECTRON IRRADIATION IN AMORPHOUS HYDROGENATED SILICON
R.V. Navkhandewala, K.L. Narasimhan and S. GuhaTata Institute of Fundamental Research, Bombay - 400005, India
Abstract
The dark conductivity of amorphous hydrogenated silicon is found to increase immediately after electron irradiation. The conductivity decreases as a function of time and settles at a value lower than the original one after room temperature anneal for 12 hours. The photoconductivity is also found to be lower. For the same dose of irradiation, the decrease in photoconductivity is found to be much larger in P-doped samples in comparison to undoped ones. Moreover, while annealing at 200°C for 6 hours removes the defects in undoped samples, the removal rate in P-doped samples is slower. Presence of Li increases the removal rate substantially. The results are discussed in terms of the vacancies and the vacancy-impurity complexes created by irradiation.