| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-769 - C4-772 | |
| DOI | https://doi.org/10.1051/jphyscol:19814168 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-769-C4-772
DOI: 10.1051/jphyscol:19814168
Naval Research Laboratory, Washington, DC 20375, U.S.A.
J. Phys. Colloques 42 (1981) C4-769-C4-772
DOI: 10.1051/jphyscol:19814168
CALCULATIONS OF TRANSPORT PROPERTIES IN a-Si : H
W.E. Pickett, D.A. Papaconstantopoulos and E.N. EconomouNaval Research Laboratory, Washington, DC 20375, U.S.A.
Abstract
We have used the coherent potential approximation to calculate the d.c. conductivity for a model of hydrogenated amorphous silicon. The results show that the mobility of electrons is greater than that of holes. This appears to be related to the strong hydrogen component of the density of states just above the gap.