| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1077 - C4-1080 | |
| DOI | https://doi.org/10.1051/jphyscol:19814236 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1077-C4-1080
DOI: 10.1051/jphyscol:19814236
1 Xerox Palo Alto Research Centers, Palo Alto, Ca. 94304, U.S.A.
2 Dept. of Electronic Engineering, University of Sheffield, England
J. Phys. Colloques 42 (1981) C4-1077-C4-1080
DOI: 10.1051/jphyscol:19814236
STRUCTURAL AND ELECTRICAL PROPERTIES OF NOBLE METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES
C.C. Tsai1, M.J. Thompson1, 2 and R.J. Nemanich11 Xerox Palo Alto Research Centers, Palo Alto, Ca. 94304, U.S.A.
2 Dept. of Electronic Engineering, University of Sheffield, England
Abstract
Interfaces between hydrogenated amorphous Si and noble metals of Pd, Pt, and Au are probed by interference enhanced Raman spectroscopy and Schottky electrical measurements. Vacuum annealing of freshly prepared Pd, Pt, and Au Schottky diodes to ~200°C changes the structure of interfaces by forming crystalline Pd2Si, both crystalline Pt2Si and PtSi which grow simultaneously, and an intermixed Au-Si phase which lacks long-ranged order. Such structural changes are accompanied by an improvement in diode ideality factors and modifications of barrier heights. With the growth of silicides or intermixed phases at the interfaces, stable and almost ideal Schottky barriers can be formed.