| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-601 - C4-604 | |
| DOI | https://doi.org/10.1051/jphyscol:19814131 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-601-C4-604
DOI: 10.1051/jphyscol:19814131
Department of Electronics, University of Osaka Prefecture, Mozu, Sakai, Osaka, Japan 591
J. Phys. Colloques 42 (1981) C4-601-C4-604
DOI: 10.1051/jphyscol:19814131
OPTICAL DLTS MEASUREMENTS OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS
M. Okuda, H. Naito, H. Nakayama and T. NakauDepartment of Electronics, University of Osaka Prefecture, Mozu, Sakai, Osaka, Japan 591
Abstract
New combined optical/thermal method (optical DLTS) for the investigation of gap states is presented. The concentration and energy distribution of the gap states have been studied. The optical DLTS signal S(T) vs. temperature is calculated from the photoconductivity decay I(t,T). The effective levels and density of states for amorphous Se and As2Se3 films were obtained.