| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-967 - C4-969 | |
| DOI | https://doi.org/10.1051/jphyscol:19814212 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-967-C4-969
DOI: 10.1051/jphyscol:19814212
Central Laboratory of Photographic Processes, Bulgarian Academy of Sciences, 1040 Sofia, Bulgaria
J. Phys. Colloques 42 (1981) C4-967-C4-969
DOI: 10.1051/jphyscol:19814212
ARSENIC SULPHIDE AS EVAPORATED DRY PHOTORESIST
A. BuroffCentral Laboratory of Photographic Processes, Bulgarian Academy of Sciences, 1040 Sofia, Bulgaria
Abstract
Most amorphous substances change their physical and chemical properties on illumination. The photosensitive solubility permits the use of amorphous arsenic sulphide as evaporated photoresist. An appropriate solvent was found which fully dissolves the exposed areas without affecting the unexposed ones. Thus extremely thin layers of evaporated amorphous arsenic sulphide can be used as sensitive photoresist with high resolution for the production of chromium masks and sensitized offset printing plates.