| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-559 - C4-562 | |
| DOI | https://doi.org/10.1051/jphyscol:19814121 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-559-C4-562
DOI: 10.1051/jphyscol:19814121
1 Don Monroe is supported by an NSF Fellowship
2 Bell Laboratories, Murray Hill, New Jersey 07974
3 MIT, Cambridge, MA, U.S.A.
J. Phys. Colloques 42 (1981) C4-559-C4-562
DOI: 10.1051/jphyscol:19814121
DENSITY OF STATES IN THE GAP OF a-As2Se3 BY PHOTOCURRENT TRANSIENT SPECTROSCOPY
D. Monroe1, J. Orenstein2 and M. Kastner31 Don Monroe is supported by an NSF Fellowship
2 Bell Laboratories, Murray Hill, New Jersey 07974
3 MIT, Cambridge, MA, U.S.A.
Abstract
Dispersive photocurrent in a-As2Se3, for T>200K, provides a measure of the density of localized states near the mobility edge. The power law transients correspond to a density of states which is exponential, g(E)∝exp(-E/kTo), with To ~ 500K. Recent measurements below 200K show deviations from the high temperature behavior. Possible explanations are discussed.