| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-495 - C4-498 | |
| DOI | https://doi.org/10.1051/jphyscol:19814105 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-495-C4-498
DOI: 10.1051/jphyscol:19814105
College of Engineering, University of Osaka Prefecture, Mozu, Sakai, Osaka 591, Japan
J. Phys. Colloques 42 (1981) C4-495-C4-498
DOI: 10.1051/jphyscol:19814105
PHOTOELECTRIC PROPERTIES OF GD a-Si : H MONOLAYER FILMS FOR ELECTROPHOTOGRAPHIC APPLICATIONS
N. Yamamoto, K. Wakita, Y. Nakayama and T. KawamuraCollege of Engineering, University of Osaka Prefecture, Mozu, Sakai, Osaka 591, Japan
Abstract
Photoluminescence, infrared absorption, and electrophotographic charge acceptance and sensitivity are measured as a function of RF power of deposition and oxygen content on a-Si : H films. A clear correlation between photoluminescence and infrared absorption spectra is observed. It is found that photoluminescence measurement can be used as a good monitor for evaluating the electrophotographic quality as well as infrared absorption.