| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-133 - C4-136 | |
| DOI | https://doi.org/10.1051/jphyscol:1981425 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-133-C4-136
DOI: 10.1051/jphyscol:1981425
Institute of Physics, Czechoslovak Academy of Sciences, Prague, Czechoslovakia
J. Phys. Colloques 42 (1981) C4-133-C4-136
DOI: 10.1051/jphyscol:1981425
ELECTRONIC STATES IN AMORPHOUS GERMANIUM CHALCOGENIDES
J. Ma¡ek and B. VelickýInstitute of Physics, Czechoslovak Academy of Sciences, Prague, Czechoslovakia
Abstract
We used Bethe lattice to represent the ideal network of amorphous GeS, GeSe and GeTe with coordination 4 : 2 and calculated corresponding densities of electronic states. Good results were obtained for Harrison Hamiltonian. Further study of a-GeS showed that localized states arise from various bonding defects. On the other hand, the actual arrangement of the chemically ordered lattice has only little effect on the density of valence states.