| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1055 - C4-1058 | |
| DOI | https://doi.org/10.1051/jphyscol:19814231 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1055-C4-1058
DOI: 10.1051/jphyscol:19814231
1 Institut für Atom - und Festkörperphysik, Freie Universität Berlin, 1000 Berlin 33, F.R.G.
2 Guest of Sfb 161
J. Phys. Colloques 42 (1981) C4-1055-C4-1058
DOI: 10.1051/jphyscol:19814231
NUCLEAR QUADRUPOLAR RELAXATION IN LIQUID Ga-Te ALLOYS
R. Brinkmann1, M. Elwenspoek1, M. von Hartrott2, A. Novak1 and D. Quitmann11 Institut für Atom - und Festkörperphysik, Freie Universität Berlin, 1000 Berlin 33, F.R.G.
2 Guest of Sfb 161
Abstract
The nuclear spin relaxation rate was measured in liquid GacTe1-c alloys on As as an impurity atom. A TDPAD technique was used on the 6 μs 73mAs isomer. The range l≥c≥0.2 was studied, with T=1110 K for c≤0.7. The quadrupolar part of the rate , RQ, was extracted. It shows essentially the same concentration dependence as existing data for RQ of Ga in liquid Gac Tel-c, and correlates strongly with the dip in conductivity near c=0.4. A quantitative analysis of the concentration dependence is attempted using a simple microscopic model. It comprises localization of conduction electrons including one free parameter for charge shift in the Ga-Te bond (ionicity). Satisfactory agreement is obtained.