| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1047 - C4-1050 | |
| DOI | https://doi.org/10.1051/jphyscol:19814229 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1047-C4-1050
DOI: 10.1051/jphyscol:19814229
L.G.E.P. - E.S.E. Plateau du Moulon, 91190 Gif-sur-Yvette, France
J. Phys. Colloques 42 (1981) C4-1047-C4-1050
DOI: 10.1051/jphyscol:19814229
PHOTOCONDUCTIVITY IN LIQUID SELENIUM
J. Rabit and J.C. PerronL.G.E.P. - E.S.E. Plateau du Moulon, 91190 Gif-sur-Yvette, France
Abstract
The steady state photoconductivity is studied between 230°C and 350°C. The electrical field dependence and the variation with the incident light flux are found to be linear. The activation energy of the reciprocal of the photocurrent varies with the photon energy only. A photoconductivity gap is linearly extrapolated and is closed to 2 eV. Transient photoconductivity measurements give a thermally activated hole lifetime. These results are analyzed by means of Onsager theory for the quantum efficiency and the other are interpreted by the model of defect, states in disordered semiconductors and compared to the data from measurements of E.S.R. and viscosity.