| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-73 - C4-82 | |
| DOI | https://doi.org/10.1051/jphyscol:1981412 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-73-C4-82
DOI: 10.1051/jphyscol:1981412
Fachbereich Physik, Universität Marburg, F. R. G.
J. Phys. Colloques 42 (1981) C4-73-C4-82
DOI: 10.1051/jphyscol:1981412
THE THEORY OF TRANSPORT IN AMORPHOUS SEMICONDUCTORS
B. MovagharFachbereich Physik, Universität Marburg, F. R. G.
Abstract
The theory of transport in disordered systems is approached using the Master equation point of view. Emphasis is laid on a microscopic interpretation. An approximate selfconsistent theory is presented with which it is possible to evaluate hopping d.c and a.c conductivity and Hall mobility. The theory is compared with computer simulations and experiments on amorphous semiconductors. The method is extended to treat diffusion limited relaxation and recombination and applied to evaluate the spin-lattice relaxation time of electronic and nuclear spins in amorphous semiconductors.