Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-865 - C4-868
DOI https://doi.org/10.1051/jphyscol:19814189
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-865-C4-868

DOI: 10.1051/jphyscol:19814189

PHOTOLUMINESCENCE AND ESR STUDIES OF LOCALIZED STATES IN AMORPHOUS PHOSPHORUS

B.V. Shanabrook, S.G. Bishop and P.C. Taylor

Naval Research Laboratory, Washington, D.C. 20375, U.S.A.


Abstract
Photoluminescence and electron spin resonance measurements have been performed in bulk a-red P. We observe a photoluminescence band at 1.40 eV which exhibits a sensitivity to the excitation energy employed. Specifically, the peak of this band progresses to lower energies for higher energy excitation. Electron spin resonance measurements indicate ~1017 spins/cm3 for "cold dark" and optically induced (6328Å) conditions. In contrast to similar measurements in bulk a-As, thermally generated paramagnetism is not apparent in bulk a-red P up to 300K. These results are compared with various defect models proposed for the pnictides.