Supplément au Journal de Physique Colloques

PLASMA ASSISTED MELTING OF COVALENT SEMICONDUCTORS p. C5-3

J. Bok

DOI: https://doi.org/10.1051/jphyscol:1983501

BOSE CONDENSATION AND THE ATHERMAL NATURE OF PULSED LASER ANNEALING p. C5-11

J.A. Van Vechten

DOI: https://doi.org/10.1051/jphyscol:1983502

FUNDAMENTALS OF PULSED LASER IRRADIATION OF SILICON p. C5-23

H. Kurz, L.A. Lompré and J.M. Liu

DOI: https://doi.org/10.1051/jphyscol:1983503

PLASMA TRANSPORT AND LASER ANNEALING p. C5-37

G. Mahler and A. Forchel

DOI: https://doi.org/10.1051/jphyscol:1983504

LUMINESCENCE STUDY OF NON-EQUILIBRIUM EFFECTS IN LASER GENERATED PLASMA p. C5-43

B. Laurich and A. Forchel

DOI: https://doi.org/10.1051/jphyscol:1983505

MECHANISMS OF MELTING OF SILICON p. C5-49

M. Wautelet and L.D. Laude

DOI: https://doi.org/10.1051/jphyscol:1983506

THE E₁ - E₁ + Δ₁ TRANSITIONS IN BULK GROWN AND IN IMPLANTED LASER ANNEALED HEAVILY DOPED GERMANIUM : LUMINESCENCE p. C5-55

G. Contreras, A. Compaan, J. Wagner, M. Cardona and A. Axmann

DOI: https://doi.org/10.1051/jphyscol:1983507

PHOTOLUMINESCENCE IN HEAVILY DOPED Si AND Ge p. C5-61

J. Wagner, A. Compaan and A. Axmann

DOI: https://doi.org/10.1051/jphyscol:1983508

STUDY OF SOME OPTICAL AND ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON LAYERS p. C5-65

A. Slaoui, E. Fogarassy, J.C. Muller and P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1983509

THERMAL CONDUCTIVITY MEASUREMENTS OF IMPLANTED Si p. C5-73

T. Papa, F. Scudieri, M. Marinelli, U. Zammit and G. Cembali

DOI: https://doi.org/10.1051/jphyscol:1983510

INSTABILITY OF LIQUID METAL SURFACES UNDER INTENSE INFRARED IRRADIATION p. C5-77

F. Keilmann

DOI: https://doi.org/10.1051/jphyscol:1983511

RENORMALIZATION EFFECTS OF THE POLARITON DISPERSION p. C5-79

F. Tomasini, J.Y. Bigot and R. Levy

DOI: https://doi.org/10.1051/jphyscol:1983512

DEPTH MEASUREMENT OF THE PHASE CHANGE UNDER PULSED RUBY LASER ANNEALING p. C5-83

M. Toulemonde, R. Heddache, F. Nielsen and P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1983513

TRANSIENTS IN CW LASER HEATING OF SEMICONDUCTORS : GENERAL METHOD, ANALYTICAL SOLUTIONS AND ILLUSTRATIONS p. C5-87

A. Maruani, Y.I. Nissim, F. Bonnouvrier and D. Paquet

DOI: https://doi.org/10.1051/jphyscol:1983514

MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON BEAM ANNEALING IN ION-IMPLANTED SILICON p. C5-91

G. Chemisky, D. Barbier and A. Laugier

DOI: https://doi.org/10.1051/jphyscol:1983515

FEMTOSECOND REFLECTIVITY MEASUREMENT OF HIGHLY PHOTOEXCITED SILICON p. C5-99

C. Hirlimann

DOI: https://doi.org/10.1051/jphyscol:1983516

TIME RESOLVED RAMAN SPECTRA DURING PULSED LASER HEATING OF SILICON p. C5-107

G. Wartmann and D. von der Linde

DOI: https://doi.org/10.1051/jphyscol:1983517

CONDUCTIVITY TRANSIENTS OF Si AND InSb UNDER INTENSE LASER EXCITATION p. C5-111

E.W. Kreutz, G. Treusch and W. Zimmer

DOI: https://doi.org/10.1051/jphyscol:1983518

ENERGY FLUCTUATIONS IN THE CARRIER RECOMBINATION PROCESS OF LASER IRRADIATED SEMICONDUCTORS p. C5-119

M. Bertolotti

DOI: https://doi.org/10.1051/jphyscol:1983519

DYNAMICS OF LASER ANNEALING OF α-GaAs p. C5-123

W. Marine, J. Marfaing, P. Mathiez and F. Salvan

DOI: https://doi.org/10.1051/jphyscol:1983520

LATTICE TEMPERATURE OF GaAs AND Si DURING PULSED LASER ANNEALING p. C5-129

A. Pospieszczyk, M. Abdel Harith and B. Stritzker

DOI: https://doi.org/10.1051/jphyscol:1983521

MATERIAL DEPOSITION AND REMOVAL USING LASER-INITIATED CHEMISTRY p. C5-133

R.M. Osgood and Jr.

DOI: https://doi.org/10.1051/jphyscol:1983522

MASKLESS MICRO ETCHING OF GaAs DIRECTLY CONTROLLED BY CALCULATOR p. C5-139

S. Mottet and L. Henry

DOI: https://doi.org/10.1051/jphyscol:1983523

DOPANT INCORPORATION DURING NONEQUILIBRIUM SOLIDIFICATION p. C5-145

C.W. White

DOI: https://doi.org/10.1051/jphyscol:1983524

EFFECT OF FAST SOLIDIFICATION ON IMPURITY TRAPPING AND AMORPHOUS FORMATION IN Si p. C5-157

P. Baeri

DOI: https://doi.org/10.1051/jphyscol:1983525

LASER AND ELECTRON BEAM ENHANCED CRYSTALLIZATION OF Si AND Ge p. C5-171

R. Andrew and M. Wautelet

DOI: https://doi.org/10.1051/jphyscol:1983526

ON THE GROWTH FROM THE AMORPHOUS PHASE IN SEMICONDUCTORS p. C5-175

J.C. Bourgoin and R. Asomoza

DOI: https://doi.org/10.1051/jphyscol:1983527

NATIVE OXIDES BEHAVIOR DURING PULSED LASER IRRADIATION OF GaAs p. C5-179

C. Cohen, J. Siejka, D. Pribat, M. Berti, A.V. Drigo, G.G. Bentini and E. Jannitti

DOI: https://doi.org/10.1051/jphyscol:1983528

PICOSECOND LASER ANNEALING OF IMPLANTED Si AND GaAs : A COMPARATIVE STUDY WITH A RAMAN MICROPROBE p. C5-187

J. Sapriel, Y.I. Nissim and J.L. Oudar

DOI: https://doi.org/10.1051/jphyscol:1983529

RAMAN STUDIES OF THE P LOCAL MODE VIBRATION IN P IMPLANTED, LASER ANNEALED Ge p. C5-193

G. Contreras, A. Compaan and A. Axmann

DOI: https://doi.org/10.1051/jphyscol:1983530

PHONON SOFTENING IN ULTRA HEAVILY DOPED Si AND Ge p. C5-197

A. Compaan, G. Contreras, M. Cardona and A. Axmann

DOI: https://doi.org/10.1051/jphyscol:1983531

THE ELECTRONIC STRUCTURE OF HEAVILY DOPED ION IMPLANTED LASER ANNEALED SILICON : ELLIPSOMETRIC MEASUREMENTS p. C5-203

L. Viña, C. Umbach, A. Compaan, M. Cardona and A. Axmann

DOI: https://doi.org/10.1051/jphyscol:1983532

PULSED ELECTRON BEAM ANNEALING OF As AND B IMPLANTED SILICON p. C5-209

D. Barbier, G. Chemisky, J.J. Grob, A. Laugier, P. Siffert and R. Stuck

DOI: https://doi.org/10.1051/jphyscol:1983533

ETUDE PAR MICROSCOPIE ELECTRONIQUE DE LA DIFFUSION INDUITE PAR LASER p. C5-215

F. Broutet, J.C. Desoyer, E. Fogarassy and P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1983534

THE ANNEALING BEHAVIOUR OF HIGH DOSE As⁺ IMPLANTS p. C5-223

D.G. Hasko, R.A. McMahon and H. Ahmed

DOI: https://doi.org/10.1051/jphyscol:1983535

HIGHLY CONTROLLED DIFFUSION OF ION IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON BEAM HEATING p. C5-229

D.J. Godfrey, R.A. McMahon, H. Ahmed and M . Dowsett

DOI: https://doi.org/10.1051/jphyscol:1983536

DIFFUSION DE L'ALUMINIUM DANS LE SILICIUM CRISTALLIN PAR RECUIT LASER SEMI-CONTINU p. C5-235

C. Leray, J.E. Bouree and M. Rodot

DOI: https://doi.org/10.1051/jphyscol:1983537

PULSED LASER AND ELECTRON BEAM INDUCED DIFFUSION OF ANTIMONY IN SILICON p. C5-241

E. Fogarassy, P. Siffert, D. Barbier, G. Chemisky and A. Laugier

DOI: https://doi.org/10.1051/jphyscol:1983538

ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS p. C5-247

Y.I. Nissim, B. Joukoff, J. Sapriel and N. Duhamel

DOI: https://doi.org/10.1051/jphyscol:1983539

RAPID THERMAL ANNEALING OF SELENIUM IMPLANTED InP p. C5-253

S.S. Gill and B.J. Sealy

DOI: https://doi.org/10.1051/jphyscol:1983540

INCORPORATION DU PHOSPHORE DANS CdTe PAR RECUIT LASER p. C5-261

C. Uzan, R. Legros and Y. Marfaing

DOI: https://doi.org/10.1051/jphyscol:1983541

DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID PHASE REGIME p. C5-269

A. Chantre

DOI: https://doi.org/10.1051/jphyscol:1983542

ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING p. C5-281

A. Mesli, J.C. Muller and P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1983543

ELECTRICAL CHARACTERISTICS OF Au SCHOTTKY CONTACTS EVAPORATED ON PULSED ELECTRON BEAM ANNEALED N-TYPE (100) SILICON p. C5-297

M.S. Doghmane, D. Barbier and A. Laugier

DOI: https://doi.org/10.1051/jphyscol:1983544

RECUIT D'IMPLATATION PAR FAISCEAU D'ÉLECTRONS BALAYÉS p. C5-303

C. Jaussaud, B. Biasse, A.M. Cartier and A. Bontemps

DOI: https://doi.org/10.1051/jphyscol:1983545

ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H₂⁺ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON p. C5-307

A. Goltzene, B. Meyer, C. Schwab, J.C. Muller and P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1983546

LOW POWER LASER ANNEALING EFFECTS IN α-Ge p. C5-313

U. Zammit, M. Marinelli, G. Vitali and F. Scudieri

DOI: https://doi.org/10.1051/jphyscol:1983547

DÉFAUTS INDUITS DANS Si PAR IMPLANTATION DIRECTE OU A TRAVERS UNE COUCHE DE SiO₂ p. C5-319

B. Balland, B. Remaki, P. Pinard and E. Mercier

DOI: https://doi.org/10.1051/jphyscol:1983548

RECRYSTALLIZATION OF Si ON INSULATING SUBSTRATES BY USING INCOHERENT LIGHT SOURCES p. C5-327

M. Haond

DOI: https://doi.org/10.1051/jphyscol:1983549

TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON p. C5-337

J.R. Davis, R.A. McMahon and H. Ahmed

DOI: https://doi.org/10.1051/jphyscol:1983550

THERMAL MODELING OF CW LASER-CRYSTALLIZATION OF SOI p. C5-343

J.M. Hode and J.P. Joly

DOI: https://doi.org/10.1051/jphyscol:1983551

APPLICATIONS OF TRANSIENT ANNEALING TO SOLAR CELL PROCESSING p. C5-353

G.G. Bentini

DOI: https://doi.org/10.1051/jphyscol:1983552

FABRICATION OF HIGH EFFICIENCY SILICON SOLAR CELLS BY LASER INDUCED DIFFUSION p. C5-363

E. Fogarassy and P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1983553

EFFECT OF HEATING SAMPLES DURING PULSED ELECTRON BEAM ANNEALING ON THE OPEN-CIRCUIT VOLTAGE OF SILICON SOLAR CELLS p. C5-369

A. Laugier, D. Barbier, M.S. Doghmane and G. Chemisky

DOI: https://doi.org/10.1051/jphyscol:1983554

PULSED AND CW LASER TREATMENTS OF IMPLANTED POLYSILICON SOLAR CELLS p. C5-375

J.C. Muller, E. Courcelle, S. Barthe, P. Siffert, J. Com-Nougué, E. Kerrand and C. Tessari

DOI: https://doi.org/10.1051/jphyscol:1983555

INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS IMPLANTED SILICON, WITH SOLAR CELL PRODUCTION IN VIEW p. C5-381

L.D. Nielsen, A.N. Larsen and V.E. Borisenko

DOI: https://doi.org/10.1051/jphyscol:1983556

ANWENDUNG DES LASERAUSHEILENS FÜR HALBLEITERBAUELEMENTE p. C5-389

H. Ryssel and J. Götzlich

DOI: https://doi.org/10.1051/jphyscol:1983557

PROPRIÉTÉS DES JONCTIONS p/n DANS LE SILICIUM OBTENUES PAR IMPLANTATION IONIQUE ET RECUIT RAPIDE p. C5-401

M.C. Boissy, P. Ruterana and G. Nouet

DOI: https://doi.org/10.1051/jphyscol:1983558

TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS p. C5-409

J.P. Colinge, E. Demoulin, D. Bensahel and G. Auvert

DOI: https://doi.org/10.1051/jphyscol:1983559

RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM p. C5-415

L. Dori, M. Impronta, G. Lulli, P.G. Merli and M. Severi

DOI: https://doi.org/10.1051/jphyscol:1983560

PULSED ANNEALING OF SILICON/PLATINUM SYSTEMS p. C5-421

E. D'Anna, G. Leggieri, A. Luches, V. Nassisi, F. Nava and C. Nobili

DOI: https://doi.org/10.1051/jphyscol:1983561

DOPING OF SILICON WITH ARSENIC AND PHOSPHORUS FROM SPIN-ON SOURCES EXPOSED TO INCOHERENT LIGHT p. C5-427

A.N. Larsen, V.E. Borisenko and L.D. Nielsen

DOI: https://doi.org/10.1051/jphyscol:1983562

THE APPLICATION OF LASER ANNEALING TO DOPANT PROFILING FOR SEMICONDUCTOR DEVICES p. C5-433

A.E. Adams and S.L. Morgan

DOI: https://doi.org/10.1051/jphyscol:1983563

PRODUCTION OF SMALL OHMIC CONTACTS BY LASER PROCESSING FOR Si AND GaAs DEVICES p. C5-439

H. Kräutle, M. Schröder and H. Beneking

DOI: https://doi.org/10.1051/jphyscol:1983564

THERMAL PULSE ANNEALING OF TITANIUM AND TANTALUM SILICIDES p. C5-445

P.J. Rosser and G. Tomkins

DOI: https://doi.org/10.1051/jphyscol:1983565

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON p. C5-449

P. Baeri, M.G. Grimaldi, E. Rimini and G. Celotti

DOI: https://doi.org/10.1051/jphyscol:1983566

REACTION KINETICS OF MoSi₂ SILICIDE OBTAINED BY cw LASER ANNEALING OF Si (a) AND Si_poly/Mo BILAYERS p. C5-455

J. Torres, G. Bomchil, Y. Pauleau, Ph. Lami and G. Auvert

DOI: https://doi.org/10.1051/jphyscol:1983567

SELFALIGNED METALLIC CONTACTS ON GaP : N-LEDs PROCESSED BY LASER PULSE IRRADIATION-INDUCED ABLATION p. C5-461

E.E. Krimmel, A.G.K. Lutsch, L. Hoffman and C. Weyrich

DOI: https://doi.org/10.1051/jphyscol:1983568

ULTRASHORT HEAT TRANSIENTS IN METALS UNDER LASER IRRADIATION p. C5-469

L.F. Donà dalle Rose

DOI: https://doi.org/10.1051/jphyscol:1983569

PULSED LASER TREATMENT OF Eu AND La IMPLANTED NICKEL : SURFACE ALLOYING, TRAPPING AND DAMAGE p. C5-481

G. Battaglin, A. Carnera, J. Chaumont, G. Della Mea, L.F. Donà dalle Rose, A.K. Jain, V.N. Kulkarni, P. Mazzoldi, A. Miotello and D.K. Sood

DOI: https://doi.org/10.1051/jphyscol:1983570

AMORPHOUS AuBi ALLOYS PRODUCED BY LASER QUENCHING AND ION IRRADIATION p. C5-489

A. Wolthuis and B. Stritzker

DOI: https://doi.org/10.1051/jphyscol:1983571

GRAIN BOUNDARY INTERDIFFUSION AND SURFACE COMPOUND FORMATION IN Al/Sb THIN FILM COUPLES p. C5-495

R. Andrew, L. Baufay, Y. Canivez and A. Pigeolet

DOI: https://doi.org/10.1051/jphyscol:1983572

METASTABLE PHASES OBTAINED BY HIGH POWER LASER SURFACE MELTING OF CAST-IRON AND STEELS p. C5-501

E. Ramous, L. Giordano, G. Principi and A. Tiziani

DOI: https://doi.org/10.1051/jphyscol:1983573

MIXAGE PAR FAISCEAU LASER PULSE DE MULTICOUCHES DE FER ET D'ALUMINIUM DEPOSE SOUS VIDE p. C5-507

E.L. Mathe, C. Jaouen, A. Bellara and J.C. Muller

DOI: https://doi.org/10.1051/jphyscol:1983574

Le Journal de Physique Colloques

Volume 44 / No C5 (Octobre 1983)

Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials