| Issue |
J. Phys. Colloques
Volume 44, Number C5, Octobre 1983
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
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| Page(s) | C5-119 - C5-122 | |
| DOI | https://doi.org/10.1051/jphyscol:1983519 | |
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
J. Phys. Colloques 44 (1983) C5-119-C5-122
DOI: 10.1051/jphyscol:1983519
Istituto di Fisica-Facoltà di Ingegneria, Università di Roma, Roma and Gruppo Nazionale Elettronica Quantistica e Plasmi of C.N.R., Italy
J. Phys. Colloques 44 (1983) C5-119-C5-122
DOI: 10.1051/jphyscol:1983519
ENERGY FLUCTUATIONS IN THE CARRIER RECOMBINATION PROCESS OF LASER IRRADIATED SEMICONDUCTORS
M. BertolottiIstituto di Fisica-Facoltà di Ingegneria, Università di Roma, Roma and Gruppo Nazionale Elettronica Quantistica e Plasmi of C.N.R., Italy
Résumé
On évalue les fluctuations d'énergie produites par la recombination des porteurs en excès dans le traitement laser des semiconducteurs dans le cas d'une loi exponentielle simple.
Abstract
Energy fluctuations by the recombination of excess carriers in laser annealing of semiconductors are evaluated in the simple case of a single exponential decay.