| Issue |
J. Phys. Colloques
Volume 44, Number C5, Octobre 1983
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
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|---|---|---|
| Page(s) | C5-145 - C5-155 | |
| DOI | https://doi.org/10.1051/jphyscol:1983524 | |
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
J. Phys. Colloques 44 (1983) C5-145-C5-155
DOI: 10.1051/jphyscol:1983524
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37850, U.S.A.
J. Phys. Colloques 44 (1983) C5-145-C5-155
DOI: 10.1051/jphyscol:1983524
DOPANT INCORPORATION DURING NONEQUILIBRIUM SOLIDIFICATION
C.W. WhiteSolid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37850, U.S.A.
Abstract
Systematic studies of dopant incorporation into silicon during rapid solidification are reviewed, including measurements of interface temperatures and thermal gradients during solidification. Mechanisms limiting dopant incorporation at high concentrations are discussed. Melting of the surface of thin amorphous layers on a crystalline substrate is shown to take place at anomously low laser energy densities.