STRUCTURE DES JOINTS DE GRAINS DANS LES SEMICONDUCTEURS p. C1-1 A. Bourret and C. d'Anterroches DOI: https://doi.org/10.1051/jphyscol:1982101 AbstractPDF (2.739 MB)
GRAIN BOUNDARIES ANALYSIS IN POLYCRYSTALLINE SILICON BY TEM p. C1-9 F. Komninou, Th. Karakostas, G.L. Bleris and N. A. Economou DOI: https://doi.org/10.1051/jphyscol:1982102 AbstractPDF (2.079 MB)
STRUCTURE DES JOINTS DE GRAINS DANS LE GERMANIUM p. C1-15 J.J. Bacmann, A.M. Papon and M. Petit DOI: https://doi.org/10.1051/jphyscol:1982103 AbstractPDF (1.241 MB)
TEM INVESTIGATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SILICON p. C1-21 Y.S. Oei, F.W. Schapink and S. Radelaar DOI: https://doi.org/10.1051/jphyscol:1982104 AbstractPDF (1.459 MB)
ANALYSE EBIC DES JOINTS DE GRAINS DANS LE SILICIUM POLYCRISTALLIN p. C1-27 P. Ruterana, A. Bary and G. Nouet DOI: https://doi.org/10.1051/jphyscol:1982105 AbstractPDF (1.313 MB)
ENERGY OF GRAIN BOUNDARIES IN SEMICONDUCTORS p. C1-33 H.J. Möller DOI: https://doi.org/10.1051/jphyscol:1982106 AbstractPDF (711.5 KB)
GLIDE OF PARTIAL DISLOCATIONS IN SILICON p. C1-45 M. Heggie and R. Jones DOI: https://doi.org/10.1051/jphyscol:1982107 AbstractPDF (1.908 MB)
THE STRUCTURE AND CRYSTALLOGRAPHY OF LATERAL TWIN BOUNDARIES I N SILICON p. C1-51 R.C. Pond DOI: https://doi.org/10.1051/jphyscol:1982108 AbstractPDF (1.429 MB)
ANTISYMMETRY OF SURFACES AND INTERFACES IN POLAR MATERIALS p. C1-57 R.C. Pond and D.B. Holt DOI: https://doi.org/10.1051/jphyscol:1982109 AbstractPDF (1.187 MB)
ELECTRICAL MEASUREMENTS OF THE GRAIN BOUNDARY LEVELS IN SEMICONDUCTORS p. C1-63 A. Broniatowski DOI: https://doi.org/10.1051/jphyscol:1982110 AbstractPDF (376.2 KB)
CORRELATION ENTRE CONTRASTES EN EBIC ET STRUCTURE CRISTALLOGRAPHIQUE DES JOINTS DE GRAINS DANS LE SILICIUM p. C1-75 C. Dianteill and A. Rocher DOI: https://doi.org/10.1051/jphyscol:1982111 AbstractPDF (1.245 MB)
MODELISATION DE LA HAUTEUR DE BARRIERE DES JOINTS DE GRAINS DANS UNE JONCTION - INFLUENCE DE L'ÉCLAIREMENT p. C1-83 J. Dugas, J.P. Crest and J. Oualid DOI: https://doi.org/10.1051/jphyscol:1982112 AbstractPDF (743.0 KB)
ELECTRONIC AND STRUCTURAL PROPERTIES OF GRAIN BOUNDARIES IN Cz-GROWN SILICON BICRYSTALS p. C1-89 J. Werner and H. Strunk DOI: https://doi.org/10.1051/jphyscol:1982113 AbstractPDF (1.143 MB)
MINORITY CARRIER LIFETIME AND POTENTIAL BARRIER HEIGHT IN POLYCRYSTALLINE SILICON : EFFECTS OF LOW TEMPERATURE ANNEALINGS AND NEUTRON IRRADIATION p. C1-95 D. Bielle-Daspet, M. Roux and J. Farah DOI: https://doi.org/10.1051/jphyscol:1982114 AbstractPDF (248.3 KB)
HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON PHOTOVOLTAIC CELLS p. C1-103 C.H. Seager, D.J. Sharp, J.K.G. Panitz and J.I. Hanoka DOI: https://doi.org/10.1051/jphyscol:1982115 AbstractPDF (1.608 MB)
GUERISON PAR L'HYDROGENE DE DEFAUTS RECOMBINANTS DANS LES COUCHES DE SILICIUM POLYCRISTALLIN RAD p. C1-117 M. Aucouturier, O. Rallon, M. Mautref and C. Belouet DOI: https://doi.org/10.1051/jphyscol:1982116 AbstractPDF (927.6 KB)
SIGNIFICANCE OF PASSIVATION TECHNIQUES ON SEMICRYSTALLINE SILICON FOR THE IMPROVEMENT OF SOLAR CELLS EFFICIENCY p. C1-125 L. Sardi, S. Pidatella and G. Figari DOI: https://doi.org/10.1051/jphyscol:1982117 AbstractPDF (111.8 KB)
TEM AND EBIC INVESTIGATIONS OF POLYCRYSTALLINE SILICON SHEETS GROWN BY THE RAD GROWTH PROCESS p. C1-129 R. Sharko, A. Gervais and C. Texier-Hervo DOI: https://doi.org/10.1051/jphyscol:1982118 AbstractPDF (1.647 MB)
CHARGED GRAIN-BOUNDARIES IN n-Ge BICRYSTALS p. C1-135 X.J. Wu, V. Szkielko and P. Haasen DOI: https://doi.org/10.1051/jphyscol:1982119 AbstractPDF (191.5 KB)
ELECTRONIC AND OPTICAL PROPERTIES OF POLYCRYSTALLINE SEMICONDUCTING FILMS p. C1-141 K.L. Chopra and V. Dutta DOI: https://doi.org/10.1051/jphyscol:1982120 AbstractPDF (806.6 KB)
RECOMBINAISON RADIATIVE ET EFFETS DE SPIN DANS LE SILICIUM MICROCRISTALLIN POST-HYDROGENE PLASMA p. C1-153 F. Boulitrop and A. Chenevas-Paule DOI: https://doi.org/10.1051/jphyscol:1982121 AbstractPDF (171.3 KB)
OPTICAL PROPERTIES OF POLYCRYSTALLINE THIN FILMS OF GaAs OBTAINED BY MBD p. C1-159 C. Paparoditis, A. Rideau, G. Monnom and Ph. Gaucherel DOI: https://doi.org/10.1051/jphyscol:1982122 AbstractPDF (277.7 KB)
GRAIN-BOUNDARIES CURRENT-VOLTAGE CHARACTERISTICS ON Si (p) BICRYSTALS : MULTI-STEP RESONANCE TUNNELING CONDUCTION THROUGH TRAPS p. C1-165 V.K. Truong, J.J. Marchand and H. Nodet DOI: https://doi.org/10.1051/jphyscol:1982123 AbstractPDF (216.5 KB)
CHEMICAL AND ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SEMICONDUCTORS p. C1-171 L.L. Kazmerski and P.E. Russell DOI: https://doi.org/10.1051/jphyscol:1982124 AbstractPDF (3.164 MB)
GRAIN BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC p. C1-187 A. Carabelas, D. Nobili and S. Solmi DOI: https://doi.org/10.1051/jphyscol:1982125 AbstractPDF (182.9 KB)
INCORPORATION, DIFFUSION ET SEGREGATION D'IMPURETES DANS LE SILICIUM POLYCRISTALLIN p. C1-193 J.F. Deville, J. Quesada and M.L. Soltani DOI: https://doi.org/10.1051/jphyscol:1982126 AbstractPDF (260.1 KB)
GRAIN BOUNDARIES INTRODUCED DEEP LEVELS IN POLYSILICON p. C1-199 B.A. Lombos, S. Yee, M. Pietrantonio and M. Averous DOI: https://doi.org/10.1051/jphyscol:1982127 AbstractPDF (741.5 KB)
INFLUENCE DE LA STRUCTURE ET DE LA SEGREGATION AUX JOINTS DE GRAINS SUR LES PROPRIETES ELECTRIQUES ET LE RENDEMENT PHOTOVOLTAIQUE DU SILICIUM POLYCRISTALLIN p. C1-207 J.L. Maurice and J.Y. Laval DOI: https://doi.org/10.1051/jphyscol:1982128 AbstractPDF (1.577 MB)
LA DIFFUSION INTERGRANULAIRE DANS LE SILICIUM p. C1-213 J.L. Liotard, R. Bibérian and J. Cabané DOI: https://doi.org/10.1051/jphyscol:1982129 AbstractPDF (239.3 KB)
RECRISTALLISATION DE Si POLY PAR FAISCEAUX D'ENERGIE p. C1-219 D. Bensahel and G. Auvert DOI: https://doi.org/10.1051/jphyscol:1982130 AbstractPDF (3.543 MB)
EFFECT OF OXYGEN PRESSURE ON OXYGEN INCORPORATION IN Si AND Ga As DURING Q SWITCHED LASER IRRADIATION p. C1-229 G.G. Bentini, M . Berti, C. Cohen, A.V. Drigo, E. Iannitti, D. Pribat and J. Siejka DOI: https://doi.org/10.1051/jphyscol:1982131 AbstractPDF (308.2 KB)
SEM CHARACTERIZATION OF EFG POLYCRYSTALLINE SILICON SOLAR CELLS REALIZED BY ION IMPLANTATION AND LASER ANNEALING WITH OVERLAPPING PULSES p. C1-235 J.C. Muller, P. Siffert, C.T. Ho, J.I. Hanoka and F.V. Wald DOI: https://doi.org/10.1051/jphyscol:1982132 AbstractPDF (1.527 MB)
A PHOTO-INDUCED MEMORY EFFECT OBSERVED ON In-Si-Se SYSTEM p. C1-241 M. Okuda, T. Matsushita, A. Suzuki, H. Naito and T. Nakau DOI: https://doi.org/10.1051/jphyscol:1982133 AbstractPDF (712.5 KB)
GROWTH OF PLASMA-TRANSPORT MICROCRYSTALLINE SILICON AS STUDIED BY IN-SITU RAMAN SPECTROSCOPY p. C1-247 H. Richter and L. Ley DOI: https://doi.org/10.1051/jphyscol:1982134 AbstractPDF (780.4 KB)
TEM AND RBS STUDIES OF THE REGROWTH OF ARSENIC IMPLANTED POLYSILICON DUE TO AN OXIDATION DRIVE-IN p. C1-253 M.C. Wilson, P. Ashburn, B. Soerwirdjo, G.R. Booker and P. Ward DOI: https://doi.org/10.1051/jphyscol:1982135 AbstractPDF (826.0 KB)
THERMODYNAMICS OF EQUILIBRIUM AND NON-EQUILIBRIUM CRYSTALLIZATION OF Ge AND Si p. C1-259 D. Turnbull DOI: https://doi.org/10.1051/jphyscol:1982136 AbstractPDF (457.6 KB)
STRUCTURAL AND ELECTRONIC PROPERTIES OF CVD SILICON FILMS NEAR THE CRYSTALLIZATION TEMPERATURE p. C1-271 J. Magariño, D. Kaplan, R. Bisaro, J.F. Morhange and K. Zellama DOI: https://doi.org/10.1051/jphyscol:1982137 AbstractPDF (648.8 KB)
PHOTO-INDUCED MICROCRYSTALLINE Inx(Si0.1Se0,9)1-x FILM-ITO SOLAR CELL p. C1-277 T. Matsushita, M. Okuda, H. Naito, A. Suzuki and T. Nakau DOI: https://doi.org/10.1051/jphyscol:1982138 AbstractPDF (1.765 MB)
EFFETS DES TRAITEMENTS THERMIQUES SUR LES PROPRIETES ELECTRIQUES DES CELLULES SOLAIRES A BASE DE SILICIUM POLYCRISTALLIN p. C1-283 E. Courcelle, M. Mesli, J.C. Muller, D. Salles and P. Siffert DOI: https://doi.org/10.1051/jphyscol:1982139 AbstractPDF (231.6 KB)
MULTICRYSTALLINE SILICON FOR SOLAR CELLS p. C1-289 D. Helmreich DOI: https://doi.org/10.1051/jphyscol:1982140 AbstractPDF (888.4 KB)
MORPHOLOGY AND RESISTIVITY OF CVD POLYCRYSTALLINE SILICON LAYERS CONTAINING CARBON p. C1-307 M. Hendriks, S. Radelaar, Th.H. de Keijser and R. Delhez DOI: https://doi.org/10.1051/jphyscol:1982141 AbstractPDF (244.1 KB)
PROPRIETES ELECTRONIQUES DES JOINTS DE GRAINS DANS LE SILICIUM POLYCRISTALLIN p. C1-313 J. Oualid, H. Amzil, J.P. Crest, J. Dugas, G. Mathian, M. Zehaf and S. Martinuzzi DOI: https://doi.org/10.1051/jphyscol:1982142 AbstractPDF (1.098 MB)
CRYSTALLOGRAPHIC ANALYSIS OF A BULKY POLYCRYSTALLINE SILICON USED FOR PHOTOVOLTAIC CONVERSION p. C1-319 P. Andonov DOI: https://doi.org/10.1051/jphyscol:1982143 AbstractPDF (353.2 KB)
THIN FILMS OF III-V COMPOUNDS AND THEIR APPLICATIONS p. C1-327 J.C.C. Fan DOI: https://doi.org/10.1051/jphyscol:1982144 AbstractPDF (2.677 MB)
ETUDE DE LA STRUCTURE CRISTALLINE ET DE LA COMPOSITION DE FILMS D'ARSENIURE DE GALLIUM PULVERISES, AVEC OU SANS RECUIT LASER p. C1-341 L. Alimoussa, H. Carchano, A. Fassi-Fihri, F. Lalande and R. Loussier DOI: https://doi.org/10.1051/jphyscol:1982145 AbstractPDF (306.8 KB)
RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE p. C1-347 F. Maury, M. Combes, G. Constant, R. Carles and J.B. Renucci DOI: https://doi.org/10.1051/jphyscol:1982146 AbstractPDF (1.709 MB)
MICROELECTRONICS APPLICATIONS OF DEPOSITED Si FILMS RECRYSTALLIZED FROM THE MELT p. C1-353 G.K. Celler and L.E. Trimble DOI: https://doi.org/10.1051/jphyscol:1982147 AbstractPDF (2.986 MB)
GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO2 p. C1-363 H. Baumgart, H.J. Leamy, G.K. Celler and L.E. Trimble DOI: https://doi.org/10.1051/jphyscol:1982148 AbstractPDF (1.281 MB)
MOBILITE EFFECTIVE DANS LE CANAL D'INVERSION D'UN TRANSISTOR MOSFET REALISE DANS UNE COUCHE MINCE DE SILICIUM POLYCRISTALLIN p. C1-369 A. Mercier, M. El Koosy, A. Le Glaunec and E. Le Tiran DOI: https://doi.org/10.1051/jphyscol:1982149 AbstractPDF (210.5 KB)
MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF PLASMA SPRAYED POLYCRYSTALLINE SILICON p. C1-375 R. Suryanarayanan and G. Zribi DOI: https://doi.org/10.1051/jphyscol:1982150 AbstractPDF (1.684 MB)
MODELISATION DE TRANSISTORS MOS RÉALISÉS DANS DU SILICIUM POLYCRISTALLIN A GROS GRAINS p. C1-381 H. Morel, J.P. Colinge and J.P. Chante DOI: https://doi.org/10.1051/jphyscol:1982151 AbstractPDF (368.1 KB)
RECRISTALLISATION PAR FUSION DE ZONE DE Si SUR SiO2 A L'AIDE DE LAMPES A HALOGENE p. C1-387 M. Haond, D. Bensahel, D.P. Vu and M. Dupuy DOI: https://doi.org/10.1051/jphyscol:1982152 AbstractPDF (1.357 MB)
