Supplément au Journal de Physique Colloques

STRUCTURE DES JOINTS DE GRAINS DANS LES SEMICONDUCTEURS p. C1-1

A. Bourret et C. d'Anterroches

DOI: https://doi.org/10.1051/jphyscol:1982101

GRAIN BOUNDARIES ANALYSIS IN POLYCRYSTALLINE SILICON BY TEM p. C1-9

F. Komninou, Th. Karakostas, G.L. Bleris et N. A. Economou

DOI: https://doi.org/10.1051/jphyscol:1982102

STRUCTURE DES JOINTS DE GRAINS DANS LE GERMANIUM p. C1-15

J.J. Bacmann, A.M. Papon et M. Petit

DOI: https://doi.org/10.1051/jphyscol:1982103

TEM INVESTIGATION OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SILICON p. C1-21

Y.S. Oei, F.W. Schapink et S. Radelaar

DOI: https://doi.org/10.1051/jphyscol:1982104

ANALYSE EBIC DES JOINTS DE GRAINS DANS LE SILICIUM POLYCRISTALLIN p. C1-27

P. Ruterana, A. Bary et G. Nouet

DOI: https://doi.org/10.1051/jphyscol:1982105

ENERGY OF GRAIN BOUNDARIES IN SEMICONDUCTORS p. C1-33

H.J. Möller

DOI: https://doi.org/10.1051/jphyscol:1982106

GLIDE OF PARTIAL DISLOCATIONS IN SILICON p. C1-45

M. Heggie et R. Jones

DOI: https://doi.org/10.1051/jphyscol:1982107

THE STRUCTURE AND CRYSTALLOGRAPHY OF LATERAL TWIN BOUNDARIES I N SILICON p. C1-51

R.C. Pond

DOI: https://doi.org/10.1051/jphyscol:1982108

ANTISYMMETRY OF SURFACES AND INTERFACES IN POLAR MATERIALS p. C1-57

R.C. Pond et D.B. Holt

DOI: https://doi.org/10.1051/jphyscol:1982109

ELECTRICAL MEASUREMENTS OF THE GRAIN BOUNDARY LEVELS IN SEMICONDUCTORS p. C1-63

A. Broniatowski

DOI: https://doi.org/10.1051/jphyscol:1982110

CORRELATION ENTRE CONTRASTES EN EBIC ET STRUCTURE CRISTALLOGRAPHIQUE DES JOINTS DE GRAINS DANS LE SILICIUM p. C1-75

C. Dianteill et A. Rocher

DOI: https://doi.org/10.1051/jphyscol:1982111

MODELISATION DE LA HAUTEUR DE BARRIERE DES JOINTS DE GRAINS DANS UNE JONCTION - INFLUENCE DE L'ÉCLAIREMENT p. C1-83

J. Dugas, J.P. Crest et J. Oualid

DOI: https://doi.org/10.1051/jphyscol:1982112

ELECTRONIC AND STRUCTURAL PROPERTIES OF GRAIN BOUNDARIES IN Cz-GROWN SILICON BICRYSTALS p. C1-89

J. Werner et H. Strunk

DOI: https://doi.org/10.1051/jphyscol:1982113

MINORITY CARRIER LIFETIME AND POTENTIAL BARRIER HEIGHT IN POLYCRYSTALLINE SILICON : EFFECTS OF LOW TEMPERATURE ANNEALINGS AND NEUTRON IRRADIATION p. C1-95

D. Bielle-Daspet, M. Roux et J. Farah

DOI: https://doi.org/10.1051/jphyscol:1982114

HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON PHOTOVOLTAIC CELLS p. C1-103

C.H. Seager, D.J. Sharp, J.K.G. Panitz et J.I. Hanoka

DOI: https://doi.org/10.1051/jphyscol:1982115

GUERISON PAR L'HYDROGENE DE DEFAUTS RECOMBINANTS DANS LES COUCHES DE SILICIUM POLYCRISTALLIN RAD p. C1-117

M. Aucouturier, O. Rallon, M. Mautref et C. Belouet

DOI: https://doi.org/10.1051/jphyscol:1982116

SIGNIFICANCE OF PASSIVATION TECHNIQUES ON SEMICRYSTALLINE SILICON FOR THE IMPROVEMENT OF SOLAR CELLS EFFICIENCY p. C1-125

L. Sardi, S. Pidatella et G. Figari

DOI: https://doi.org/10.1051/jphyscol:1982117

TEM AND EBIC INVESTIGATIONS OF POLYCRYSTALLINE SILICON SHEETS GROWN BY THE RAD GROWTH PROCESS p. C1-129

R. Sharko, A. Gervais et C. Texier-Hervo

DOI: https://doi.org/10.1051/jphyscol:1982118

CHARGED GRAIN-BOUNDARIES IN n-Ge BICRYSTALS p. C1-135

X.J. Wu, V. Szkielko et P. Haasen

DOI: https://doi.org/10.1051/jphyscol:1982119

ELECTRONIC AND OPTICAL PROPERTIES OF POLYCRYSTALLINE SEMICONDUCTING FILMS p. C1-141

K.L. Chopra et V. Dutta

DOI: https://doi.org/10.1051/jphyscol:1982120

RECOMBINAISON RADIATIVE ET EFFETS DE SPIN DANS LE SILICIUM MICROCRISTALLIN POST-HYDROGENE PLASMA p. C1-153

F. Boulitrop et A. Chenevas-Paule

DOI: https://doi.org/10.1051/jphyscol:1982121

OPTICAL PROPERTIES OF POLYCRYSTALLINE THIN FILMS OF GaAs OBTAINED BY MBD p. C1-159

C. Paparoditis, A. Rideau, G. Monnom et Ph. Gaucherel

DOI: https://doi.org/10.1051/jphyscol:1982122

GRAIN-BOUNDARIES CURRENT-VOLTAGE CHARACTERISTICS ON Si (p) BICRYSTALS : MULTI-STEP RESONANCE TUNNELING CONDUCTION THROUGH TRAPS p. C1-165

V.K. Truong, J.J. Marchand et H. Nodet

DOI: https://doi.org/10.1051/jphyscol:1982123

CHEMICAL AND ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SEMICONDUCTORS p. C1-171

L.L. Kazmerski et P.E. Russell

DOI: https://doi.org/10.1051/jphyscol:1982124

GRAIN BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC p. C1-187

A. Carabelas, D. Nobili et S. Solmi

DOI: https://doi.org/10.1051/jphyscol:1982125

INCORPORATION, DIFFUSION ET SEGREGATION D'IMPURETES DANS LE SILICIUM POLYCRISTALLIN p. C1-193

J.F. Deville, J. Quesada et M.L. Soltani

DOI: https://doi.org/10.1051/jphyscol:1982126

GRAIN BOUNDARIES INTRODUCED DEEP LEVELS IN POLYSILICON p. C1-199

B.A. Lombos, S. Yee, M. Pietrantonio et M. Averous

DOI: https://doi.org/10.1051/jphyscol:1982127

INFLUENCE DE LA STRUCTURE ET DE LA SEGREGATION AUX JOINTS DE GRAINS SUR LES PROPRIETES ELECTRIQUES ET LE RENDEMENT PHOTOVOLTAIQUE DU SILICIUM POLYCRISTALLIN p. C1-207

J.L. Maurice et J.Y. Laval

DOI: https://doi.org/10.1051/jphyscol:1982128

LA DIFFUSION INTERGRANULAIRE DANS LE SILICIUM p. C1-213

J.L. Liotard, R. Bibérian et J. Cabané

DOI: https://doi.org/10.1051/jphyscol:1982129

RECRISTALLISATION DE Si POLY PAR FAISCEAUX D'ENERGIE p. C1-219

D. Bensahel et G. Auvert

DOI: https://doi.org/10.1051/jphyscol:1982130

EFFECT OF OXYGEN PRESSURE ON OXYGEN INCORPORATION IN Si AND Ga As DURING Q SWITCHED LASER IRRADIATION p. C1-229

G.G. Bentini, M . Berti, C. Cohen, A.V. Drigo, E. Iannitti, D. Pribat et J. Siejka

DOI: https://doi.org/10.1051/jphyscol:1982131

SEM CHARACTERIZATION OF EFG POLYCRYSTALLINE SILICON SOLAR CELLS REALIZED BY ION IMPLANTATION AND LASER ANNEALING WITH OVERLAPPING PULSES p. C1-235

J.C. Muller, P. Siffert, C.T. Ho, J.I. Hanoka et F.V. Wald

DOI: https://doi.org/10.1051/jphyscol:1982132

A PHOTO-INDUCED MEMORY EFFECT OBSERVED ON In-Si-Se SYSTEM p. C1-241

M. Okuda, T. Matsushita, A. Suzuki, H. Naito et T. Nakau

DOI: https://doi.org/10.1051/jphyscol:1982133

GROWTH OF PLASMA-TRANSPORT MICROCRYSTALLINE SILICON AS STUDIED BY IN-SITU RAMAN SPECTROSCOPY p. C1-247

H. Richter et L. Ley

DOI: https://doi.org/10.1051/jphyscol:1982134

TEM AND RBS STUDIES OF THE REGROWTH OF ARSENIC IMPLANTED POLYSILICON DUE TO AN OXIDATION DRIVE-IN p. C1-253

M.C. Wilson, P. Ashburn, B. Soerwirdjo, G.R. Booker et P. Ward

DOI: https://doi.org/10.1051/jphyscol:1982135

THERMODYNAMICS OF EQUILIBRIUM AND NON-EQUILIBRIUM CRYSTALLIZATION OF Ge AND Si p. C1-259

D. Turnbull

DOI: https://doi.org/10.1051/jphyscol:1982136

STRUCTURAL AND ELECTRONIC PROPERTIES OF CVD SILICON FILMS NEAR THE CRYSTALLIZATION TEMPERATURE p. C1-271

J. Magariño, D. Kaplan, R. Bisaro, J.F. Morhange et K. Zellama

DOI: https://doi.org/10.1051/jphyscol:1982137

PHOTO-INDUCED MICROCRYSTALLINE In_x(Si_0.1Se_0,9)_1-x FILM-ITO SOLAR CELL p. C1-277

T. Matsushita, M. Okuda, H. Naito, A. Suzuki et T. Nakau

DOI: https://doi.org/10.1051/jphyscol:1982138

EFFETS DES TRAITEMENTS THERMIQUES SUR LES PROPRIETES ELECTRIQUES DES CELLULES SOLAIRES A BASE DE SILICIUM POLYCRISTALLIN p. C1-283

E. Courcelle, M. Mesli, J.C. Muller, D. Salles et P. Siffert

DOI: https://doi.org/10.1051/jphyscol:1982139

MULTICRYSTALLINE SILICON FOR SOLAR CELLS p. C1-289

D. Helmreich

DOI: https://doi.org/10.1051/jphyscol:1982140

MORPHOLOGY AND RESISTIVITY OF CVD POLYCRYSTALLINE SILICON LAYERS CONTAINING CARBON p. C1-307

M. Hendriks, S. Radelaar, Th.H. de Keijser et R. Delhez

DOI: https://doi.org/10.1051/jphyscol:1982141

PROPRIETES ELECTRONIQUES DES JOINTS DE GRAINS DANS LE SILICIUM POLYCRISTALLIN p. C1-313

J. Oualid, H. Amzil, J.P. Crest, J. Dugas, G. Mathian, M. Zehaf et S. Martinuzzi

DOI: https://doi.org/10.1051/jphyscol:1982142

CRYSTALLOGRAPHIC ANALYSIS OF A BULKY POLYCRYSTALLINE SILICON USED FOR PHOTOVOLTAIC CONVERSION p. C1-319

P. Andonov

DOI: https://doi.org/10.1051/jphyscol:1982143

THIN FILMS OF III-V COMPOUNDS AND THEIR APPLICATIONS p. C1-327

J.C.C. Fan

DOI: https://doi.org/10.1051/jphyscol:1982144

ETUDE DE LA STRUCTURE CRISTALLINE ET DE LA COMPOSITION DE FILMS D'ARSENIURE DE GALLIUM PULVERISES, AVEC OU SANS RECUIT LASER p. C1-341

L. Alimoussa, H. Carchano, A. Fassi-Fihri, F. Lalande et R. Loussier

DOI: https://doi.org/10.1051/jphyscol:1982145

RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et₂Ga - PEt₂]₃ AS ONLY SOURCE p. C1-347

F. Maury, M. Combes, G. Constant, R. Carles et J.B. Renucci

DOI: https://doi.org/10.1051/jphyscol:1982146

MICROELECTRONICS APPLICATIONS OF DEPOSITED Si FILMS RECRYSTALLIZED FROM THE MELT p. C1-353

G.K. Celler et L.E. Trimble

DOI: https://doi.org/10.1051/jphyscol:1982147

GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO₂ p. C1-363

H. Baumgart, H.J. Leamy, G.K. Celler et L.E. Trimble

DOI: https://doi.org/10.1051/jphyscol:1982148

MOBILITE EFFECTIVE DANS LE CANAL D'INVERSION D'UN TRANSISTOR MOSFET REALISE DANS UNE COUCHE MINCE DE SILICIUM POLYCRISTALLIN p. C1-369

A. Mercier, M. El Koosy, A. Le Glaunec et E. Le Tiran

DOI: https://doi.org/10.1051/jphyscol:1982149

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF PLASMA SPRAYED POLYCRYSTALLINE SILICON p. C1-375

R. Suryanarayanan et G. Zribi

DOI: https://doi.org/10.1051/jphyscol:1982150

MODELISATION DE TRANSISTORS MOS RÉALISÉS DANS DU SILICIUM POLYCRISTALLIN A GROS GRAINS p. C1-381

H. Morel, J.P. Colinge et J.P. Chante

DOI: https://doi.org/10.1051/jphyscol:1982151

RECRISTALLISATION PAR FUSION DE ZONE DE Si SUR SiO₂ A L'AIDE DE LAMPES A HALOGENE p. C1-387

M. Haond, D. Bensahel, D.P. Vu et M. Dupuy

DOI: https://doi.org/10.1051/jphyscol:1982152

Le Journal de Physique Colloques

Volume 43 / Numéro C1 (Octobre 1982)

Colloque International du C.N.R.S. sur les Semiconducteurs Polycristallins / Polycrystalline Semiconductors