LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY p. C5-3 M.C. Joncour, J.L. Benchimol, J. Burgeat and M. Quillec DOI: https://doi.org/10.1051/jphyscol:1982501 PDF (248.4 KB)
INTERFACE SPINODAL DECOMPOSITION IN LPE InxGa1-xAsyP1-y LATTICE MATCHED TO InP p. C5-11 F. Glas, M.M.J. Treacy, M. Quillec and H. Launois DOI: https://doi.org/10.1051/jphyscol:1982502 PDF (1.179 MB)
THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VPE p. C5-17 G.B. Stringfellow DOI: https://doi.org/10.1051/jphyscol:1982503 PDF (22.39 KB)
INSTABILITY CRITERIA IN TERNARY AND QUATERNARY I I I-V EPITAXIAL SOLID SOLUTIONS p. C5-19 B. de Cremoux DOI: https://doi.org/10.1051/jphyscol:1982504 PDF (371.1 KB)
LOW-TEMPERATURE GROWTH CONDITIONS AND PROPERTIES OF AlGa (As) Sb ON GaSb SUBSTRATE BY LPE p. C5-29 S. Fujita, N. Hamaguchi, Y. Takeda and A. Sasaki DOI: https://doi.org/10.1051/jphyscol:1982505 PDF (1.501 MB)
THE EFFECT OF Ge ON THE LIQUIDUS AND SOLIDUS IN THE SYSTEM AlGaAs : Ge p. C5-39 D. Dutartre, M. Gavand, L. Mayet, A. Laugier and I. Ansara DOI: https://doi.org/10.1051/jphyscol:1982506 PDF (273.2 KB)
LE MODELE "D. L. P. - ORDRE-CONTRAINTE" : INFLUENCE DU DESORDRE CHIMIQUE ET DU SUBSTRAT D'EPITAXIE SUR LES DIAGRAMMES D'EQUILIBRE TERNAIRES & QUATERNAIRES I I I-V p. C5-47 A. Marbeuf and J.C. Guillaume DOI: https://doi.org/10.1051/jphyscol:1982507 PDF (904.6 KB)
LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP p. C5-61 R. Linnebach, K. Hess, K. Lösch and G. Schemmel DOI: https://doi.org/10.1051/jphyscol:1982508 PDF (1.393 MB)
SELF-SUPERSATURATION IN LIQUID PHASE EPITAXY OF InGaAs ON InP : A SIMPLIFIED L.P.E. TECHNIQUE p. C5-69 J.L. Benchimol and M. Quillec DOI: https://doi.org/10.1051/jphyscol:1982509 PDF (181.6 KB)
LPE GROWTH AND CHARACTERIZATION OF CADMIUM AND BERYLLIUM DOPED InP AND In.7Ga.3As.6P.4 p. C5-73 A. Perronnet, J. Magnabal, D. Sigogne, D. Huet and J. Benoit DOI: https://doi.org/10.1051/jphyscol:1982510 PDF (604.7 KB)
THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs p. C5-87 J.P. Duchemin DOI: https://doi.org/10.1051/jphyscol:1982511 PDF (215.9 KB)
KINETIC THEORY OF AUTODOPING IN REDUCED PRESSURE EPITAXY OF SILICON p. C5-93 M. Onuki and A. Nishikawa DOI: https://doi.org/10.1051/jphyscol:1982512 PDF (315.8 KB)
DOPANT INCORPORATION DURING LP-VPE OF GaAs p. C5-101 E. Veuhoff, A. Sauerbrey, N. Pütz, M. Heyen and P. Balk DOI: https://doi.org/10.1051/jphyscol:1982513 PDF (362.4 KB)
LOW PRESSURE VAPOUR PHASE EPITAXY OF GaAs –THE GROWTH RATE LIMITING PROCESSES p. C5-111 J.L. Gentner and R. Cadoret DOI: https://doi.org/10.1051/jphyscol:1982514 PDF (272.1 KB)
THE OMVPE GROWTH OF GaAs AND GaAlAs ON A LARGE SCALE p. C5-119 S.D. Hersee, M. Baldy, P. Assenat, D. Hyghe, M. Bonnet and J.P. Duchemin DOI: https://doi.org/10.1051/jphyscol:1982515 PDF (535.9 KB)
THE EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE p. C5-129 G. Duggan, P. Dawson, C.T. Foxon and G.W. 't Hooft DOI: https://doi.org/10.1051/jphyscol:1982516 PDF (210.6 KB)
INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs p. C5-135 H. Jung, H. Künzel and K. Ploog DOI: https://doi.org/10.1051/jphyscol:1982517 PDF (441.2 KB)
THE INTERACTION OF HYDROGEN WITH GaAs SURFACES p. C5-145 R.Z. Bachrach and R.D. Bringans DOI: https://doi.org/10.1051/jphyscol:1982518 PDF (363.0 KB)
SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82 p. C5-153 J.C. Bean and S.R. McAfee DOI: https://doi.org/10.1051/jphyscol:1982519 PDF (681.7 KB)
SILICON MODULATION DOPING STRUCTURES USING MULTI-STEP MOLECULAR BEAM EPITAXY AND ION IMPLANTATION p. C5-173 T. de Jong, W.A.S. Douma and F.W. Saris DOI: https://doi.org/10.1051/jphyscol:1982520 PDF (30.13 KB)
INFLUENCE OF GROWTH CONDITIONS AND OF ALLOY COMPOSITION ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE AlxGa1-xAs (0.2 = x = 0.4) p. C5-175 H. Künzel, H. Jung, E. Schubert and K. Ploog DOI: https://doi.org/10.1051/jphyscol:1982521 PDF (400.9 KB)
QUANTUM WELL AND MODULATION DOPED GaAs - Gal-xAlxAs HETEROSTRUCTURES p. C5-185 P.M. Frijlink and J. Maluenda DOI: https://doi.org/10.1051/jphyscol:1982522 PDF (986.6 KB)
THE GROWTH OF QUANTUM WELL GaAs/GaAlAs LASER STRUCTURES p. C5-193 S.D. Hersee, M. Baldy and P. Assenat DOI: https://doi.org/10.1051/jphyscol:1982523 PDF (254.9 KB)
PREPARATION AND CHARACTERIZATION OF STRAINED SUPERLATTICES STRUCTURES OF InGaAs/GaAs BY MBE p. C5-201 L. Goldstein, M. Quillec, K. Rao, P. Hénoc, J.M. Masson and J.Y. Marzin DOI: https://doi.org/10.1051/jphyscol:1982524 PDF (854.7 KB)
INFLUENCE OF MBE GROWTH CONDITIONS ON THE PROPERTIES OF AlxGa1-xAs/GaAs HETEROSTRUCTURES p. C5-209 H. Morkoç DOI: https://doi.org/10.1051/jphyscol:1982525 PDF (2.024 MB)
THE VAPOR PHASE INTERACTION OF TRIMETHYLALUMINUM WITH GRAPHITE DURING OMVPE p. C5-221 D.W. Kisker, D.A. Stevenson, J.N. Miller and G.B. Stringfellow DOI: https://doi.org/10.1051/jphyscol:1982526 PDF (631.7 KB)
INFLUENCE OF GRAPHITE BAFFLES IN GaAs/Ga AlAs OM-VPE GROWTH p. C5-229 R. Azoulay, L. Dugrand and E.V.K. Kao DOI: https://doi.org/10.1051/jphyscol:1982527 PDF (1.886 MB)
TEMPERATURES AND FLOWS IN HORIZONTAL EPI REACTORS p. C5-235 L.J. Giling DOI: https://doi.org/10.1051/jphyscol:1982528 PDF (1.974 MB)
THE DESIGN AND OPTIMISATION OF A LARGE SCALE VPE REACTOR FOR THE GROWTH OF GaAs BY THE HALIDE PROCESS p. C5-249 I.H. Goodridge DOI: https://doi.org/10.1051/jphyscol:1982529 PDF (2.023 MB)
MULTICHAMBER REACTORS : A SOLUTION TO THE PROBLEM OF GRADED HETEROINTERFACES IN HOT-WALL VPE SYSTEMS p. C5-259 G. Beuchet, D. Clemensat and P. Thebault DOI: https://doi.org/10.1051/jphyscol:1982530 PDF (1.053 MB)
ANISOTROPY IN SULPHUR DOPING OF GaAs GROWN BY V.P.E. p. C5-267 J.L. Gentner DOI: https://doi.org/10.1051/jphyscol:1982531 PDF (208.9 KB)
AlxGa1-xAs/AlyGa1-yAs VISIBLE LASERS GROWN BY MOCVD p. C5-271 Y. Mori, O. Matsuda, M. Ikeda, K. Kaneko and N. Watanabe DOI: https://doi.org/10.1051/jphyscol:1982532 PDF (356.7 KB)
H2Se DOPING OF MOCVD GROWN GaAs AND GaAlAs p. C5-281 R.W. Glew DOI: https://doi.org/10.1051/jphyscol:1982533 PDF (244.9 KB)
THE VAPOUR PHASE ETCHING AND N-TYPE DOPING OF INDIUM PHOSPHIDE p. C5-287 P. Davies, N.B. Hasdell and P.L. Giles DOI: https://doi.org/10.1051/jphyscol:1982534 PDF (3.569 MB)
GaAs METAL ORGANICS VAPOUR PHASE EPITAXY : RESIDUAL CARBON p. C5-303 B. el Jani, M. Leroux, J.C. Grenet and P. Gibart DOI: https://doi.org/10.1051/jphyscol:1982535 PDF (224.6 KB)
SELECTIVE ETCHING OF n-TYPE GaAs IN A CrO3-HF-H2O SYSTEM UNDER LASER ILLUMINATION p. C5-313 J.L. Weyher and J. Van de Ven DOI: https://doi.org/10.1051/jphyscol:1982536 PDF (1.539 MB)
GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM ARSENIDE BY MOLECULAR BEAM EPITAXY p. C5-321 S.C. Palmateer, P.A. Maki, M.A. Hollis, L.F. Eastman, I.D. Ward and C. Evans DOI: https://doi.org/10.1051/jphyscol:1982537 PDF (65.81 KB)
ORGANOMETALLIC EPITAXIAL GROWTH OF GaAs1-xPx p. C5-323 L. Samuelson, P. Omling, H. Titze and H.G. Grimmeiss DOI: https://doi.org/10.1051/jphyscol:1982538 PDF (1.135 MB)
PARAMETRIC STUDIES OF GaAs GROWTH BY METALORGANIC MOLECULAR BEAM EPITAXY p. C5-339 N. Vodjdani, A. Lemarchand and H. Paradan DOI: https://doi.org/10.1051/jphyscol:1982539 PDF (1.382 MB)
DEEP STATES AND SURFACE PROCESSES IN GaAs GROWN BY MOLECULAR BEAM EPITAXY p. C5-351 P. Blood, J.J. Harris, B.A. Joyce and J.H. Neave DOI: https://doi.org/10.1051/jphyscol:1982540 PDF (232.8 KB)
THERMODYNAMIC STUDIES OF THE SILICON TRANSPORT IN LPE GROWTH ON InP SUBSTRATES p. C5-357 C. Chatillon and C. Bernard DOI: https://doi.org/10.1051/jphyscol:1982541 PDF (590.4 KB)
OPTIMISATION OF Sn DOPING IN GaAls/ GaAs DH LASERS GROWN BY MBE p. C5-377 J.F. Stagg, P.J. Hulyer, C.T. Foxon and D. Ashenford DOI: https://doi.org/10.1051/jphyscol:1982542 PDF (205.2 KB)
LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP p. C5-383 K.H. Goetz, A.V. Solomonov, D. Bimberg, H. Jürgensen, M. Razeghi and J. Selders DOI: https://doi.org/10.1051/jphyscol:1982543 PDF (472.2 KB)
GROWTH OF InP-EPITAXIAL LAYERS : A COMPARISON BETWEEN MOVPE- AND VPE-TECHNIQUES p. C5-393 K.W. Benz, H. Haspeklo and R. Bosch DOI: https://doi.org/10.1051/jphyscol:1982544 PDF (925.3 KB)
EFFECTS OF GROWTH CONDITIONS ON DEEP-LEVEL DEFECTS IN VPE AND LPE GaAs p. C5-401 Sheng S. and W.L. Wang DOI: https://doi.org/10.1051/jphyscol:1982545 PDF (77.49 KB)
GROWTH OF IV-VI, II-VI AND III-V SEMICONDUCTOR COMPOUNDS BY HOT WALL EPITAXY p. C5-405 J. Humenberger, M. Sadeghi, E. Gruber, G. Elsinger, H. Sitter and A. Lopez-Otero DOI: https://doi.org/10.1051/jphyscol:1982546 PDF (863.9 KB)
PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON p. C5-411 D. Barbier, A. Laugier and A. Cachard DOI: https://doi.org/10.1051/jphyscol:1982547 PDF (375.4 KB)
CROISSANCE EPITAXIQUE D'ARSENIURE DE GALLIUM PAR DEPOT CHIMIQUE EN PHASE VAPEUR A PARTIR D'UN NOUVEAU COMPOSE ORGANOMETALLIQUE LE MONOCHLORODIMETHYLGALLIUM-TRIETHYLARSINE p. C5-421 A. Zaouk and G. Constant DOI: https://doi.org/10.1051/jphyscol:1982548 PDF (1.902 MB)
PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON p. C5-427 I. Golecki, H.M. Manasevit, J.J. Yang, L.A. Moudy, J.E. Mee and T.J. Magee DOI: https://doi.org/10.1051/jphyscol:1982549 PDF (34.89 KB)
INFLUENCE DE LA TEMPERATURE D'EPITAXIE SUR LA QUALITE CRISTALLINE, LES PERFORMANCES ELECTRIQUES ET LE TYPE DE CONDUCTION DES COUCHES DE CdxHg1-xTe PREPAREES EN EPITAXIE PAR JETS MOLECULAIRES p. C5-429 A. Million and J.P. Faurie DOI: https://doi.org/10.1051/jphyscol:1982550 PDF (134.1 KB)
OBSERVATIONS ON THE GROWTH OF GOOD SURFACE QUALITY, HIGH MOBILITY EPITAXIAL LAYERS OF InP BY THE In-PCl3-H2 TECHNIQUE p. C5-433 D.J. Ashen, D.A. Anderson, N. Apsley, M.T. Emeny and L.L. Taylor DOI: https://doi.org/10.1051/jphyscol:1982551 PDF (1003 KB)
MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF In0.53Ga0.47As AND InP SUBSTRATE p. C5-445 D. Bonnevie and D. Huet DOI: https://doi.org/10.1051/jphyscol:1982552 PDF (311.0 KB)
EPITAXIE EN PHASE LIQUIDE DE DOUBLES HETEROSTRUCTURES LASER In1-xGaxAsyP1-y/InP (x ≈ 0,5y, y ≈ 0,9) EMETTANT AU VOISINAGE DE 1,55µm ET CARACTERISEES PAR UNE FAIBLE DENSITE DE COURANT DE SEUIL p. C5-453 J.P. Jicquel, A. Perronnet, H. Lebled, M. Matabon and J. Benoit DOI: https://doi.org/10.1051/jphyscol:1982553 PDF (32.79 KB)
PROBLEMES LIES A LA REALISATION PAR EPITAXIE EN PHASE LIQUIDE DE LASERS A RUBAN ENTERRE In1-xGaxAsyP1-y (λ = 1,3 µm et 1,5 µm) DE FAIBLE LARGEUR (1 à 3 µm) p. C5-455 R. Landreaux, O. Boulard, J.P. Jicquel, H. Lebled, L. Legouezigou, Y. Louis, J. Magnabal, D. Sigogne and J. Benoit DOI: https://doi.org/10.1051/jphyscol:1982554 PDF (39.40 KB)
VAPOUR PHASE GROWTH OF GaAs BY THE HYDRIDE TECHNIQUE p. C5-457 I.A. Dorrity DOI: https://doi.org/10.1051/jphyscol:1982555 PDF (491.6 KB)
INFLUENCE DU PROCESSUS D'ELABORATION SUR LES DEFAUTS CRISTALLOGRAPHIQUES DANS LES COUCHES DE GaAs EPITAXIEES PAR JETS MOLECULAIRES p. C5-465 M. Bafleur and A. Munoz-Yague DOI: https://doi.org/10.1051/jphyscol:1982556 PDF (2.841 MB)
ELABORATION DE COUCHES EPITAXIEES DE SILICIUM PAR PULVERISATION IONIQUE p. C5-473 C. Schwebel, F. Meyer and G. Gautherin DOI: https://doi.org/10.1051/jphyscol:1982557 PDF (581.7 KB)
GROWTH AND PROPERTIES OF 1,3 AND 1.5µm GaInAsP DOUBLE HETEROSTRUCTURE WITH DIFFERENT ACTIVE LAYER THICKNESSES p. C5-481 G. Chaminant, M. Gilleron, J. Charil, P. Devoldere and J.C. Bouley DOI: https://doi.org/10.1051/jphyscol:1982558 PDF (33.13 KB)
PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTURE LASERS p. C5-483 F. Alexandre, N. Duhamel, P. Ossart, J.M. Masson and C. Meillerat DOI: https://doi.org/10.1051/jphyscol:1982559 PDF (1.016 MB)
A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS p. C5-491 A.K. Chatterjee, M.M. Faktor, R.H. Moss and E.A.D. White DOI: https://doi.org/10.1051/jphyscol:1982560 PDF (1.001 MB)
