| Numéro |
J. Phys. Colloques
Volume 43, Numéro C5, Décembre 1982
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
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|---|---|---|
| Page(s) | C5-271 - C5-279 | |
| DOI | https://doi.org/10.1051/jphyscol:1982532 | |
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
J. Phys. Colloques 43 (1982) C5-271-C5-279
DOI: 10.1051/jphyscol:1982532
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
J. Phys. Colloques 43 (1982) C5-271-C5-279
DOI: 10.1051/jphyscol:1982532
AlxGa1-xAs/AlyGa1-yAs VISIBLE LASERS GROWN BY MOCVD
Y. Mori, O. Matsuda, M. Ikeda, K. Kaneko et N. WatanabeSony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
Abstract
AlGaAs/AlGaAs double-heterostructure (DH) visible lasers with low threshold current densities have been grown by metalorganic chemical vapor deposition (MOCVD). Proton-isolated narrow stripe visible lasers have good performance and uniformity of the characteristics over the whole wafer is excellent. Contamination of the undoped AlGaAs depends on the partial pressure ratio of V element to III elements as well as on Al content. Carbon and oxygen contamination is most essential and discussed in detail. Finally, some systematic results of life test for the MOCVD visible lasers will be presented.