| Numéro |
J. Phys. Colloques
Volume 43, Numéro C5, Décembre 1982
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
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|---|---|---|
| Page(s) | C5-321 - C5-322 | |
| DOI | https://doi.org/10.1051/jphyscol:1982537 | |
Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material
J. Phys. Colloques 43 (1982) C5-321-C5-322
DOI: 10.1051/jphyscol:1982537
1 School of Electrical Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
2 San Mateo, CA 94402, U.S.A.
J. Phys. Colloques 43 (1982) C5-321-C5-322
DOI: 10.1051/jphyscol:1982537
GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM ARSENIDE BY MOLECULAR BEAM EPITAXY
S.C. Palmateer1, P.A. Maki1, M.A. Hollis1, L.F. Eastman1, I.D. Ward2 et C. Evans21 School of Electrical Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
2 San Mateo, CA 94402, U.S.A.
Abstract
In the present paper we report results of our experimental study of unipolar gallium arsenide structures with planar doped barriers /1/ grown by molecular beam epitaxy. Rectifying diodes based on planar doped barrier structures have been fabricated by molecular beam epitaxy using modulation doping in GaAs (planar doped n-i-p+-i-n). The barrier height in these structures can be effectively varied from zero to approximately the bandgap, O < qΦBO < Eg through the appropriate choice of the following related parameters : [MATH] the above equation shows that the zero bias barrier height is related to the ionized acceptor charge density (QA) and the distances separating the acceptor plane from the donor planes, (l1, l2).