ELUCIDATION OF DISLOCATION CORE STRUCTURES IN SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY p. C4-3 G.L. Hutchison DOI: https://doi.org/10.1051/jphyscol:1983401 RésuméPDF (1.917 MB)
LA STRUCTURE DU COEUR DES DISLOCATIONS DANS LE SILICIUM CZ ETUDIEE PAR MICROSCOPIE ELECTRONIQUE p. C4-15 A. Bourret, J. Desseaux-Thibault et F. Lancon DOI: https://doi.org/10.1051/jphyscol:1983402 RésuméPDF (1.535 MB)
STRUCTURE AND ENERGY LEVELS OF DISLOCATIONS IN SILICON p. C4-25 S . Marklund DOI: https://doi.org/10.1051/jphyscol:1983403 RésuméPDF (476.3 KB)
CORE STRUCTURE OF 90° PARTIAL DISLOCATIONS IN DIAMOND p. C4-37 K.W. Lodge, A. Lapiccirella, N. Tomassini et S.L. Altmann DOI: https://doi.org/10.1051/jphyscol:1983404 RésuméPDF (246.0 KB)
ENERGY LEVELS AND PROPERTIES OF DEFECTS ON RECONSTRUCTED DISLOCATIONS IN SILICON p. C4-43 M.I. Heggie et R. Jones DOI: https://doi.org/10.1051/jphyscol:1983405 RésuméPDF (245.2 KB)
DISLOCATION MOBILITY MEASUREMENTS : AN ESSENTIAL TOOL FOR UNDERSTANDING THE ATOMIC AND ELECTRONIC CORE STRUCTURES OF DISLOCATIONS I N SEMICONDUCTORS p. C4-51 F. Louchet et A. George DOI: https://doi.org/10.1051/jphyscol:1983406 RésuméPDF (1.777 MB)
THEORIES OF DISLOCATION MOBILITY IN SEMICONDUCTORS p. C4-61 R. Jones DOI: https://doi.org/10.1051/jphyscol:1983407 RésuméPDF (306.9 KB)
DISLOCATION BENDS I N HIGH STRESS DEFORMED SILICON CRYSTALS p. C4-69 H. Gottschalk DOI: https://doi.org/10.1051/jphyscol:1983408 RésuméPDF (1.696 MB)
A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON p. C4-75 S.G. Roberts, P. Pirouz et P.B. Hirsch DOI: https://doi.org/10.1051/jphyscol:1983409 RésuméPDF (869.9 KB)
ASYMMETRY OF ISOLATED DISLOCATIONS MOBILITY IN Ge AND Si SINGLE CRYSTALS p. C4-85 V.I. Nikitenko, B.Ya. Farber et E.B. Yakimov DOI: https://doi.org/10.1051/jphyscol:1983410 RésuméPDF (1.303 MB)
DEEP ELECTRON LEVELS AND FURTHER EFFECTS OF TOPOLOGICAL DISORDER BY DISLOCATIONS p. C4-93 H. Teichler et H. Veth DOI: https://doi.org/10.1051/jphyscol:1983411 RésuméPDF (365.1 KB)
DISLOCATION ELECTRON SPECTRUM AND THE MECHANISM OF DISLOCATION MICROWAVE CONDUCTION IN SEMICONDUCTORS p. C4-103 Yu.A. Ossipyan DOI: https://doi.org/10.1051/jphyscol:1983412 RésuméPDF (936.0 KB)
ELECTRICAL TRANSPORT IN THE DISLOCATION CORE p. C4-113 R. Labusch DOI: https://doi.org/10.1051/jphyscol:1983413 RésuméPDF (33.80 KB)
EXPERIMENTAL STUDIES OF ENERGY STATES ASSOCIATED WITH DISLOCATIONS IN III-V COMPOUNDS p. C4-115 J.L. Farvacque, D. Ferre et D. Vignaud DOI: https://doi.org/10.1051/jphyscol:1983414 RésuméPDF (470.7 KB)
OPTICAL PROPERTIES OF PLASTICALLY DEFORMED AIIBVI CRYSTALS p. C4-125 V.Ya. Emelin, N.V. Klassen, V.D. Negrii et Yu.A. Ossipyan DOI: https://doi.org/10.1051/jphyscol:1983415 RésuméPDF (317.5 KB)
PHOTOLUMINESCENCE FROM DISLOCATED SILICON CRYSTALS p. C4-133 M. Suezawa et K. Sumino DOI: https://doi.org/10.1051/jphyscol:1983416 RésuméPDF (275.2 KB)
HYDROGENATION EFFECTS ON RADIATIVE RECOMBINATION IN TWISTED SILICON p. C4-141 D. Gwinner DOI: https://doi.org/10.1051/jphyscol:1983417 RésuméPDF (231.3 KB)
STRAIN INDUCED EFFECTS OF DISLOCATIONS IN CdS:SHIFT OF EXCITONIC LINES, PHOTOVOLTAIC EFFECT p. C4-149 O. Vyvenko DOI: https://doi.org/10.1051/jphyscol:1983418 RésuméPDF (201.2 KB)
OPTICAL ABSORPTION STUDIES OF DISLOCATION INDUCED DEEP LEVELS IN InSb p. C4-157 V. Vignaud et J.L. Farvacque DOI: https://doi.org/10.1051/jphyscol:1983419 RésuméPDF (211.5 KB)
GALVANOMAGNETIC PROPERTIES OF PLASTICALLY DEFORMED InSb p. C4-163 D. Ferre et J.L. Farvacque DOI: https://doi.org/10.1051/jphyscol:1983420 RésuméPDF (200.4 KB)
CHARACTERIZATION OF STRESS FIELD AND ELECTRIC ACTIVITY OF DISLOCATIONS IN SEMICONDUCTORS p. C4-169 A. Haydar et A. Coret DOI: https://doi.org/10.1051/jphyscol:1983421 RésuméPDF (1.572 MB)
DEFORMATION LUMINESCENCE IN II-VI CRYSTALS p. C4-183 S.I. Bredikhin et S.Z. Shmurak DOI: https://doi.org/10.1051/jphyscol:1983422 RésuméPDF (276.7 KB)
RELAXATION LONGUE DUREE DE LA PHOTOCONDUCTIVITE DANS CdTe p. C4-189 A. Zozime et W. Schröter DOI: https://doi.org/10.1051/jphyscol:1983423 RésuméPDF (132.6 KB)
INTERACTION BETWEEN DISLOCATIONS AND IMPURITIES IN SILICON p. C4-195 K. Sumino DOI: https://doi.org/10.1051/jphyscol:1983424 RésuméPDF (519.6 KB)
COMBINED ELECTRON MICROSCOPICAL AND DLTS (ESP, DSLTS) INVESTIGATIONS IN SEMICONDUCTORS p. C4-207 O. Breitenstein et J. Heydenreich DOI: https://doi.org/10.1051/jphyscol:1983425 RésuméPDF (2.431 MB)
RECOVERY PROCESSES IN THE HIGH-TEMPERATURE DEFORMATION OF GERMANIUM, SILICON AND INDIUM ANTIMONIDE p. C4-217 H. Siethoff DOI: https://doi.org/10.1051/jphyscol:1983426 RésuméPDF (367.9 KB)
PRECIPITATION DE L'OXYGENE SUR LES DISLOCATIONS DU SILICIUM CZ : ANALYSE THERMODYNAMIQUE ET STABILITE p. C4-227 A. Bourret DOI: https://doi.org/10.1051/jphyscol:1983427 RésuméPDF (812.6 KB)
LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE p. C4-233 B. Hamilton, A. R. Peaker et D. R. Wight DOI: https://doi.org/10.1051/jphyscol:1983428 RésuméPDF (631.4 KB)
PLASTIC DEFORMATION OF SILICON AT LOW TEMPERATURE AND THE INFLUENCE OF DOPING p. C4-243 J. Rabier, P. Veyssière et J.L. Demenet DOI: https://doi.org/10.1051/jphyscol:1983429 RésuméPDF (1.279 MB)
THE EFFECT OF HYDROGEN ON DISLOCATION PHOTOLUMINESCENCE IN SILICON p. C4-255 Yu. A. Ossipyan, A. M. Rtishchev et E. A. Steinman DOI: https://doi.org/10.1051/jphyscol:1983430 RésuméPDF (306.6 KB)
ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON p. C4-261 H. Bender, C. Claeys, J. Van Landuyt, G. Declerck, S. Amelinckx et R. Van Overstraeten DOI: https://doi.org/10.1051/jphyscol:1983431 RésuméPDF (2.115 MB)
QUANTITATIVE EVALUATION OF THE EBIC CONTRAST OF DlSLOCATIONS p. C4-269 C. Donolato DOI: https://doi.org/10.1051/jphyscol:1983432 RésuméPDF (786.2 KB)
CATHODOLUMINESCENCE STUDIES OF DISLOCATIONS IN SEMICONDUCTORS p. C4-277 M. Dupuy DOI: https://doi.org/10.1051/jphyscol:1983433 RésuméPDF (560.6 KB)
THE TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON p. C4-289 A. Ourmazd, P.R. Wilshaw et G.R. Booker DOI: https://doi.org/10.1051/jphyscol:1983434 RésuméPDF (1.674 MB)
DEFECTS IN CADMIUM TELLURIDE AS STUDIED BY SEM/EBIC p. C4-297 B. Sieber et M. Dupuy DOI: https://doi.org/10.1051/jphyscol:1983435 RésuméPDF (1.371 MB)
LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY p. C4-305 A. Castaldini, A. Cavallini et P. Gondi DOI: https://doi.org/10.1051/jphyscol:1983436 RésuméPDF (1.921 MB)
X-RAY AND SCANNING CATHODOLUMINESCENCE IMAGING OF SMALL-ANGLE GRAIN BOUNDARIES AND DISLOCATIONS IN CdTe CRYSTALS p. C4-313 M. Klimkiewicz et J. Auleytner DOI: https://doi.org/10.1051/jphyscol:1983437 RésuméPDF (892.5 KB)
DEEP LEVEL DEFECTS IN PLASTICALLY DEFORMED SILICON p. C4-319 E.R. Weber et H. Alexander DOI: https://doi.org/10.1051/jphyscol:1983438 RésuméPDF (920.3 KB)
CAPACITANCE TRANSIENT SPECTROSCOPY OF STATES LOCALISED AT DISLOCATIONS p. C4-329 W. Schröter et M. Seibt DOI: https://doi.org/10.1051/jphyscol:1983439 RésuméPDF (290.9 KB)
TRANSIENT ELECTRICAL PROPERTIES OF LOW ANGLE TILT BOUNDARIES IN GROWN GERMANIUM BICRYSTALS p. C4-339 A. Broniatowski DOI: https://doi.org/10.1051/jphyscol:1983440 RésuméPDF (192.4 KB)
SPIN-DEPENDENT RECOMBINATION AT DISLOCATION DANGLING BONDS IN Si p. C4-345 V.V. Kveder, Yu.A. Ossipyan et A . I . Shalynin DOI: https://doi.org/10.1051/jphyscol:1983441 RésuméPDF (282.4 KB)
CREATION OF AsGa DEFECTS BY PLASTIC DEFORMATION OF GaAs CRYSTALS p. C4-353 T. Figielski, T. Wosiski et A. Morawski DOI: https://doi.org/10.1051/jphyscol:1983442 RésuméPDF (231.1 KB)
HYDROGENATION STUDIES OF DEFORMED n-Si p. C4-359 B. Pohoryles DOI: https://doi.org/10.1051/jphyscol:1983443 RésuméPDF (144.6 KB)
THE PLASTICITY OF A SEMICONDUCTING COMPOUND : CdTe, ELECTRICAL MEASUREMENT AND CHEMOMECHANICAL EFFECT p. C4-365 P. Haasen, H. Müller et G. Zoth DOI: https://doi.org/10.1051/jphyscol:1983444 RésuméPDF (266.1 KB)
RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V COMPOUNDS p. C4-375 K. Maeda et S. Takeuchi DOI: https://doi.org/10.1051/jphyscol:1983445 RésuméPDF (905.8 KB)
PLASTIC DEFORMATION OF II-VI COMPOUNDS WITH SPHALERITE STRUCTURE : EXAMPLE ZnSe, ZnTe p. C4-387 G. Rivaud et J.C. Desoyer DOI: https://doi.org/10.1051/jphyscol:1983446 RésuméPDF (1.295 MB)
ELIMINATION OF DISLOCATIONS IN GaAs SINGLE CRYSTALS p. C4-397 M. Duseaux, C. Schiller, J.P. Cornier, J.P. Chevalier et J. Hallais DOI: https://doi.org/10.1051/jphyscol:1983447 RésuméPDF (3.394 MB)
ETUDE DES DEFAUTS DANS LES COUCHES HETEROEPITAXIALES DE MATERIAUX I I I-V PAR L'ANALYSE METALLOGRAPHIQUE SUR BISEAU CHIMIQUE p. C4-409 A.M. Huber, G. Laurencin et M. Razeghi DOI: https://doi.org/10.1051/jphyscol:1983448 RésuméPDF (904.5 KB)
CORRELATION ENTRE LES DISLOCATIONS, LES CONCENTRATIONS EN CARBONE ET LES LONGUEURS DE DIFFUSION DANS DU SILICIUM POLYCRISTALLIN C.G.E p. C4-415 H . Amzil, L. Ammor, E . Psaila, M. Zehaf, G. Mathian, S . Martinuzzi, J.P. Crest, J . Oualid, B. Pichaud et F . Minari DOI: https://doi.org/10.1051/jphyscol:1983449 RésuméPDF (555.4 KB)
THEORETICAL DESCRIPTION OF THE INFLUENCE OF DISLOCATIONS ON THE LUMINESCENCE OF LIGHT-EMITTING DIODES p. C4-423 L. Pasemann DOI: https://doi.org/10.1051/jphyscol:1983450 RésuméPDF (313.1 KB)
CHARACTERIZATION OF DISLOCATIONS AND THEIR EFFECTS IN SILICON DEVICE TECHNOLOGY p. C4-437 M. Kittler, W. Seifert, E. Bugiel et H. Richter DOI: https://doi.org/10.1051/jphyscol:1983451 RésuméPDF (2.443 MB)
SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERISED EBIC SYSTEM p. C4-445 P.R. Wilshaw, A. Ourmazd et G.R. Booker DOI: https://doi.org/10.1051/jphyscol:1983452 RésuméPDF (245.5 KB)
ELECTRON STATES ASSOCIATED WITH PARTIAL DISLOCATIONS IN DIAMOND p. C4-453 A. Persson DOI: https://doi.org/10.1051/jphyscol:1983453 RésuméPDF (218.9 KB)
BAND STRUCTURE OF VACANCIES AND DISLOCATIONS IN DIAMOND p. C4-461 R. Jones et T.E.G. King DOI: https://doi.org/10.1051/jphyscol:1983454 RésuméPDF (132.0 KB)
SOME EXAMPLES OF QUANTITATIVE E.B.I.C. MODE FOR THE STUDY OF THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTOR DEVICES p. C4-465 J.F. Bresse DOI: https://doi.org/10.1051/jphyscol:1983455 RésuméPDF (114.5 KB)
ON SOME ASPECTS OF THE MOBILITY OF DISLOCATIONS IN SLIGHTLY n-DOPED InSb SINGLE CRYSTALS p. C4-469 J. Di Persio et R. Kesteloot DOI: https://doi.org/10.1051/jphyscol:1983456 RésuméPDF (2.365 MB)
ON THE MOTION OF DISLOCATION BENDS IN TERMS OF THE KINK MODEL p. C4-475 H. Gottschalk DOI: https://doi.org/10.1051/jphyscol:1983457 RésuméPDF (123.0 KB)
LA MICROSCOPIE ACOUSTIQUE ET SES APPLICATIONS AUX DEFAUTS DANS LES SEMICONDUCTEURS p. C4-479 J. Attal, J.M. Dandonneau, M. Zahouni et Ly Cong Can DOI: https://doi.org/10.1051/jphyscol:1983458 RésuméPDF (1.021 MB)
PHOTOACOUSTIC SPECTROSCOPY OF DISLOCATED SILICON CRYSTALS p. C4-485 M. Suezawa DOI: https://doi.org/10.1051/jphyscol:1983459 RésuméPDF (109.2 KB)
PHOTOACOUSTICS, NEW METHODS TO STUDY OPTICAL PROPERTIES OF DISLOCATIONS ? p. C4-489 F. Auzel DOI: https://doi.org/10.1051/jphyscol:1983460 RésuméPDF (213.7 KB)
