Supplément au Journal de Physique Colloques

THE APPLICATION OF INFRARED SPECTROSCOPY TO THE DETECTION OF SURFACE INTERMEDIATES IN CVD p. C5-1

M.A. CHESTERS

DOI: https://doi.org/10.1051/jphyscol:1989501

ÉTUDE PAR PHOTOÉMISSION DE L'ADSORPTION DE DISILANE SUR Si (111) 7x7 p. C5-3

M. ALAOUI, F. RINGEISEN, D. MULLER, D. BOLMONT et J.J. KOULMANN

DOI: https://doi.org/10.1051/jphyscol:1989502

SPECTROSCOPIE RAMAN COHÉRENTE DANS UN RÉACTEUR CVD p. C5-13

N. HERLIN, M. LEFEBVRE, M. PÉALAT et M. PARLIER

DOI: https://doi.org/10.1051/jphyscol:1989503

MÉTHODE D'ANALYSE DE GAZ EN AMONT ET EN AVAL DE RÉACTEURS DE MOVPE EN VUE DE LA MISE AU POINT DE PROCESS p. C5-14

B. CROS, M. STOEHR, M. MAURIN, A. MATHIEU, J.-M. FABRE et L. GIRAL

DOI: https://doi.org/10.1051/jphyscol:1989504

MONTAGE RAMAN DE HAUTES PERFORMANCES ADAPTÉ A LA CARACTÉRISATION DE LA PHASE GAZEUSE DANS DES OPÉRATIONS DE DÉPÔT CHIMIQUE EN PHASE VAPEUR. RÉSULTATS PRÉLIMINAIRES p. C5-15

R. GAUFRES, P. HUGUET, D. BOYA et L. LAFFORET

DOI: https://doi.org/10.1051/jphyscol:1989505

CONVECTION AND CHEMISTRY EFFECTS IN CVD - A 3-D ANALYSIS FOR SILICON DEPOSITION p. C5-17

S.A. GOKOGLU, M. KUCZMARSKI, P. TSUI et A. CHAIT

DOI: https://doi.org/10.1051/jphyscol:1989506

A TWO DIMENSIONAL MODEL FOR LPCVD REACTORS HYDRODYNAMICS AND MASS TRANSFER p. C5-35

C. VINANTE, P. DUVERNEUIL et J.P. COUDERC

DOI: https://doi.org/10.1051/jphyscol:1989507

A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR p. C5-45

Y.J. PARK, G.J. MIN, Y.W. PARK, C.O. PARK et J.S. CHUN

DOI: https://doi.org/10.1051/jphyscol:1989508

SIMULATION DU TRANSFERT DE CHALEUR ET DE QUANTITÉ DE MOUVEMENT DANS UN REACTEUR DE VAPODÉPOSITION p. C5-47

H. CHEHOUANI, B. ARMAS, S. BENET et S. BRUNET

DOI: https://doi.org/10.1051/jphyscol:1989509

MODELING OF COLD WALL CHEMICAL VAPOR DEPOSITION REACTORS (FOR SEMICONDUCTOR FABRICATION) p. C5-57

M. PONS, R. KLEIN, C. ARENA et S. MARIAUX

DOI: https://doi.org/10.1051/jphyscol:1989510

MODELING OF LPCVD SILICON NITRIDE PROCESS p. C5-67

JI-TAO WANG, SHI-LI ZHANG, YONG-FA WANG, WEI ZHANG, ZHENG-CHANG CHEN, KE-YUN ZHANG et YUAN-FANG WANG

DOI: https://doi.org/10.1051/jphyscol:1989511

EXPERIMENTAL AND THEORETICAL DEPOSITION PROFILES FOR STATIC AND DYNAMIC PCVD WITH WF₆/H₂ AND/OR ORGANOMETALLIC STARTING COMPOUNDS p. C5-73

G. GÄRTNER, P. JANIEL et F. WELING

DOI: https://doi.org/10.1051/jphyscol:1989512

PROCESS CHARACTERISATION FOR LPCVD DEPOSITION OF SiO₂ FILMS FROM TEOS LIQUID SOURCE p. C5-83

S. ROJAS, P. SERRA, W.S. WU, F. SANTARELLI, G.C. SARTI et F. MINNI

DOI: https://doi.org/10.1051/jphyscol:1989513

CVD MODIFICATION OF CERAMIC MEMBRANES : SIMULATION AND PRELIMINARY RESULTS p. C5-91

Y.S. LIN, K.J. DE VRIES et A.J. BURGGAAF

DOI: https://doi.org/10.1051/jphyscol:1989514

ON THE KINETICS OF THE CVD OF Si FROM SiH₂Cl₂/H₂ AND SiC FROM CH₃SiCl₃/H₂ IN A VERTICAL TUBULAR HOT-WALL REACTOR p. C5-93

F. LANGLAIS, C. PREBENDE, B. TARRIDE et R. NASLAIN

DOI: https://doi.org/10.1051/jphyscol:1989515

THERMODYNAMIC CALCULATION OF THE TWO PHASED DEPOSITION DOMAINS WITH SiC IN THE Si-Ti-C-Cl-H CHEMICAL SYSTEM p. C5-105

M. TOUANEN, F. TEYSSANDIER et M. DUCARROIR

DOI: https://doi.org/10.1051/jphyscol:1989516

HIGH Tc SUPERCONDUCTING THIN FILMS BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION p. C5-117

B. GALLOIS

DOI: https://doi.org/10.1051/jphyscol:1989517

CVD OF SUPERCONDUCTIVE YBa₂ Cu₃ O_7-δ p. C5-119

F. SCHMADERER et G. WAHL

DOI: https://doi.org/10.1051/jphyscol:1989518

PREPARATION OF SUPERCONDUCTING-OXIDE FILMS BY CVD AND THEIR PROPERTIES p. C5-131

H. YAMANE, H. KUROSAWA et T. HIRAI

DOI: https://doi.org/10.1051/jphyscol:1989519

NEW TECHNIQUE FOR THE DEPOSITION OF HIGH T_c SUPERCONDUCTING FILMS p. C5-141

M. LANGLET, E. SENET, J.L. DESCHANVRES, G. DELABOUGLISE, F. WEISS et J.C. JOUBERT

DOI: https://doi.org/10.1051/jphyscol:1989520

STUDY OF THE PREPARATION OF HIGH Tc SUPERCONDUCTING YBCO THIN FILMS BY A PLASMA-ASSISTED MOCVD PROCESS p. C5-149

DING-KUN PENG, GUANG-YAO MENG, CHUN-BAO CAO, CHUN-LIN WANG, QI FANG, YUE-HUAN WU et YU-HENG ZHANG

DOI: https://doi.org/10.1051/jphyscol:1989521

THE BASIC LAWS OF THE CHEMICAL CRYSTALLIZATION OF DIAMOND FROM THE GAS PHASE p. C5-157

B.V. DERJAGUIN et D.V. FEDOSEEV

DOI: https://doi.org/10.1051/jphyscol:1989522

DEPOSITION OF DIAMOND LAYERS BY HOT-FILAMENT ACTIVATED CVD USING ACETONE AS A CARBON SOURCE p. C5-159

S. OKOLI, R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jphyscol:1989523

INFLUENCE OF THE COBALT CONTENT IN HOT-PRESSED CEMENTED CARBIDES ON THE DEPOSITION OF LOW-PRESSURE DIAMOND LAYERS p. C5-169

R. HAUBNER et B. LUX

DOI: https://doi.org/10.1051/jphyscol:1989524

MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND p. C5-177

L. VANDENBULCKE, P. BOU, R. HERBIN, V. CHOLET et C. BENY

DOI: https://doi.org/10.1051/jphyscol:1989525

THE CVI-PROCESSING OF CERAMIC MATRIX COMPOSITES p. C5-191

R. NASLAIN, F. LANGLAIS et R. FEDOU

DOI: https://doi.org/10.1051/jphyscol:1989526

PREPARATION OF SIC-WHISKER REINFORCED CVD-SIC p. C5-209

E. FITZER, W. REMMELE et G. SCHOCH

DOI: https://doi.org/10.1051/jphyscol:1989527

CVD GROWTH AND MORPHOLOGY OF Ti (C, N) WHISKERS p. C5-219

H. SCHACHNER, G. HORLAVILLE et P. FONTAINE

DOI: https://doi.org/10.1051/jphyscol:1989528

A METHOD FOR RAPID CHEMICAL VAPOR INFILTRATION OF CERAMIC COMPOSITES p. C5-229

T.M. BESMANN, R.A. LOWDEN, D.P. STINTON et T.L. STARR

DOI: https://doi.org/10.1051/jphyscol:1989529

AUTOCAR LAMPS COATED WITH A YELLOW MULTILAYER FILTER BY LPCVD p. C5-241

C.A.M. MULDER, W.H.M.M. VAN DE SPIJKER, J. JENSMA, G. VERSPUI et G.H.C. HEIJNEN

DOI: https://doi.org/10.1051/jphyscol:1989530

CARACTÉRISATION ET PROPRIÉTÉS DES FIBRES DE CARBONE REVÊTUES DE CARBURES RÉFRACTAIRES DÉPOSÉS PAR CVD RÉACTIVE p. C5-249

H. VINCENT, B. BONNETOT, J. BOUIX, H. MOURICHOUX et C. VINCENT

DOI: https://doi.org/10.1051/jphyscol:1989531

MECHANICAL RESPONSE AND RUPTURE MODES OF SiC/C CVD LAMELLAR COMPOSITES p. C5-259

M. IGNAT, M. NADAL, C. BERNARD, M. DUCARROIR et F. TEYSSANDIER

DOI: https://doi.org/10.1051/jphyscol:1989532

MATÉRIAUX CARBONES OBTENUS PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR ASSISTÉ PAR UN PLASMA RÉACTIF p. C5-269

O. LÉVESQUE, M. RICCI, M. TRINQUECOSTE et P. DELHAÈS

DOI: https://doi.org/10.1051/jphyscol:1989533

SILICON CARBIDE CHEMICAL VAPOUR INFILTRATION p. C5-281

Y.G. ROMAN et L.R. WOLFF

DOI: https://doi.org/10.1051/jphyscol:1989534

THE DEVELOPMENT OF AN IMPROVED MULTILAYER CVD COATING FOR METALCUTTING APPLICATIONS p. C5-282

K.E. UNDERCOFFER, B.K. DOWNEY, F.B. BATTAGLIA et W.A. BRYANT

DOI: https://doi.org/10.1051/jphyscol:1989535

ASPECTS OF ELECTRON PROBE MICROANALYSIS APPLIED TO THE CHARACTERIZATION OF COATINGS p. C5-285

P. WILLICH et D. OBERTOP

DOI: https://doi.org/10.1051/jphyscol:1989536

COATINGS CHARACTERIZATIONS BY THE MIRAGE EFFECT AND THE PHOTOTHERMAL MICROSCOPE p. C5-295

J.P. ROGER, D. FOURNIER, A.C. BOCCARA et F. LEPOUTRE

DOI: https://doi.org/10.1051/jphyscol:1989537

BORON CARBIDE COATINGS : CORRELATION BETWEEN MECHANICAL PROPERTIES AND LPCVD PARAMETERS VALUES p. C5-311

J. REY, G. MALE, Ph. KAPSA et J.L. LOUBET

DOI: https://doi.org/10.1051/jphyscol:1989538

CHARACTERIZATION OF INTRINSIC STRESSES OF PECVD SILICON NITRIDE FILMS DEPOSITED IN A HOT-WALL REACTOR p. C5-323

K. AITE, R. KOEKOEK, J. HOLLEMAN et J. MIDDELHOEK

DOI: https://doi.org/10.1051/jphyscol:1989539

AES, XPS AND TEM CHARACTERIZATION OF BORON NITRIDE DEPOSITED UNDER CHEMICAL VAPOR INFILTRATION (CVI) CONDITIONS p. C5-333

O. DUGNE, S. PROUHET, A. GUETTE, R. NASLAIN, R. FOURMEAUX, K. HSSEIN, J. SEVELY, C. GUIMON, D. GONBEAU et G. PFISTER-GUILLOUZO

DOI: https://doi.org/10.1051/jphyscol:1989540

CARACTÉRISATION DE COUCHES MINCES DE VERRES DE CHALCOGENURE PRÉPARÉES PAR PECVD p. C5-343

B. CROS, H. CAMON, Y. BROCHETON, J.P. GONCHOND, A. TISSIER, J.L. BALLADORE et M. RIBES

DOI: https://doi.org/10.1051/jphyscol:1989541

COMPORTEMENT PHYSICO-CHIMIQUE DE Si₃N₄ OBTENU PAR LPCVD SOUMIS A DES FLUX RADIATIFS INTENSES p. C5-353

A. WANG, D. THENEGAL, C. ROYERE, C. DUPUY et B. ARMAS

DOI: https://doi.org/10.1051/jphyscol:1989542

CARACTÉRISATION DES MÉTAUX RÉFRACTAIRES DE HAUTE PURETÉ OBTENUS PAR CVD p. C5-363

P. NETTER

DOI: https://doi.org/10.1051/jphyscol:1989543

CVD OF TITANIUM CARBIDE AT MODERATE TEMPERATURE FROM TITANIUM SUBCHLORIDES p. C5-367

B. DROUIN-LADOUCE, J.P. PITON et L. VANDENBULCKE

DOI: https://doi.org/10.1051/jphyscol:1989544

MICROSTRUCTURE OF CVD - Al₂O₃ p. C5-377

C. CHATFIELD, J.N. LINDSTRÖM et M.E. SJÖSTRAND

DOI: https://doi.org/10.1051/jphyscol:1989545

CVD OF YTTRIA STABILIZED ZIRCONIA p. C5-389

J. WAHLROOS, K. TARKKELL, T.A. MANTYLA et P.O. KETTUNEN

DOI: https://doi.org/10.1051/jphyscol:1989546

PHASE TRANSFORMATION DURING CVD OF ALUMINIUM OXIDE p. C5-391

E. FREDRIKSSON et J.-O. CARLSSON

DOI: https://doi.org/10.1051/jphyscol:1989547

TITANIA-COATINGS ON STRONGLY PASSIVATED SUBSTRATES p. C5-401

W. HAENNI, H.E. HINTERMANN, D. MOREL et A. SIMMEN

DOI: https://doi.org/10.1051/jphyscol:1989548

LTO - SiO₂ DEPOSITION IN A STAGNATION FLOW LPCVD SYSTEM p. C5-411

R. WEBER, G. WAHL et R. HUBER

DOI: https://doi.org/10.1051/jphyscol:1989549

HARDNESS AND DIMENSIONS OF STEELS WITH HARD COATINGS PRODUCED BY CHEMICAL VAPOUR DEPOSITION AT MEDIUM TEMPERATURES p. C5-421

W. RUPPERT

DOI: https://doi.org/10.1051/jphyscol:1989550

A COMPARISON BETWEEN CVD AND PVD COATED CEMENTED CARBIDE CUTTING TOOLS p. C5-422

R. PORAT et Y. CASSUTO

DOI: https://doi.org/10.1051/jphyscol:1989551

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (CVD) ON OXIDE AND NONOXIDE CERAMIC CUTTING TOOLS p. C5-423

A. LAYYOUS et R. WERTHEIM

DOI: https://doi.org/10.1051/jphyscol:1989552

PROTECTIVE CVD COATINGS FOR THE TOOL INDUSTRY : REQUIREMENTS FOR PROCESS CONTROL AND EQUIPMENT p. C5-433

E. MOHN, R. BONETTI et H. WIPRÄCHTIGER

DOI: https://doi.org/10.1051/jphyscol:1989553

MORPHOLOGICAL ASPECTS OF SILICON CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE p. C5-434

A. PARRETTA, A. CAMANZI, G. GIUNTA, V. ADONCECCHI, P. ALESSANDRINI et A. MAZZARANO

DOI: https://doi.org/10.1051/jphyscol:1989554

KINETICS OF THE CHEMICAL VAPOR DEPOSITION OF SILICON NITRIDE-FROM Si(CH₃)₄/ NH₃/H₂ GAS MIXTURES p. C5-435

N. ROELS, T. LECOINTE, R. GUINEBRETIERE et J. DESMAISON

DOI: https://doi.org/10.1051/jphyscol:1989555

TITANIUM CARBIDE COATINGS ON STEEL : STUDY OF THE CONDITIONS OF ELABORATION AND OF SUBSTRATE-COATING INTERACTIONS p. C5-445

A. DERRE, F. TEYSSANDIER et M. DUCARROIR

DOI: https://doi.org/10.1051/jphyscol:1989556

ÉTUDE, PAR LA MÉTHODE DES RADIOTRACEURS, DE LA DIFFUSION DU FER DANS LE SILICIURE DE FER Fe₃Si OBTENU PAR CVD p. C5-455

S. AUDISIO et P. GUIRALDENQ

DOI: https://doi.org/10.1051/jphyscol:1989557

LPCVD SILICON FOR ACTIVE DEVICES p. C5-467

B. LOISEL, L. HAJI et M. GUENDOUZ

DOI: https://doi.org/10.1051/jphyscol:1989558

CHEMICAL VAPOR DEPOSITION OF REFRACTORY METALS DISILICIDES : A REVIEW p. C5-479

R. MADAR et C. BERNARD

DOI: https://doi.org/10.1051/jphyscol:1989559

HETEROEPITAXY OF COVALENT SEMICONDUCTORS : FUNDAMENTALS, GROWTH AND CRYSTAL PROPERTIES p. C5-499

A. FREUNDLICH

DOI: https://doi.org/10.1051/jphyscol:1989560

EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR p. C5-519

J. L. REGOLINI, D. BENSAHEL, J. MERCIER et E. SCHEID

DOI: https://doi.org/10.1051/jphyscol:1989561

GROWTH ANISOTROPY AND REACTIONS MECHANISMS IN METAL ORGANICS VAPOR PHASE EPITAXY OF GaAs p. C5-529

P. GIBART, A. TROMSON-CARLI, Y. MONTEIL et A. RUDRA

DOI: https://doi.org/10.1051/jphyscol:1989562

GROWTH CONDITION ANALYSIS AND CHARACTERIZATION OF HIGH PERFECTION InGaAs/InP LAYERS GROWN BY HYDRIDE VPE p. C5-539

G. ATTOLINI, C. BOCCHI, C. FRIGERI et C. PELOSI

DOI: https://doi.org/10.1051/jphyscol:1989563

ÉTUDE THERMODYNAMIQUE DU PROCESSUS DE DÉPÔT PAR LA TECHNIQUE DU "MUR CHAUD" - APPLICATION AUX SYSTÈMES Pb-Te, Pb-Se, Pb-Se-Te p. C5-549

M. MULLER, B. LIAUTARD, R. ASTIER, G. BRUN et J.C. TEDENAC

DOI: https://doi.org/10.1051/jphyscol:1989564

CHEMICAL VAPOR DEPOSITION OF TaSi₂ AND WSi₂ AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES p. C5-557

E. BLANQUET, C. VAHLAS, C. BERNARD, R. MADAR, J. PALLEAU et J. TORRES

DOI: https://doi.org/10.1051/jphyscol:1989565

DEPOSITION AND STUDY OF CARBONYL CVD-W THIN FILMS p. C5-565

K.A. GESHEVA et G.S. BESHKOV

DOI: https://doi.org/10.1051/jphyscol:1989566

CHEMICAL VAPOUR DEPOSITION OF THIN FILMS IN THE SYSTEM B-P p. C5-567

E.M. KELDER, A. GOOSSENS, P.J. VAN DER PUT et J. SCHOONMAN

DOI: https://doi.org/10.1051/jphyscol:1989567

AN INDUSTRIAL PROCESS FOR BPSG-TEOS p. C5-575

P. EPPENGA, E. SCHUIVENS et M. HENDRIKS

DOI: https://doi.org/10.1051/jphyscol:1989568

AN INFLUENCE OF DOPING ON THE KINETICS OF BPSG DEPOSITION PROCESS AND THE PROPERTIES OF THE DEPOSITED LAYER p. C5-585

P.B. GRABIEC et S.M. PIETRUSZKO

DOI: https://doi.org/10.1051/jphyscol:1989569

QLTO, A CLASSICAL PROCESS STILL GOING STRONG p. C5-595

W. VAN HEUMEN et M. HENDRIKS

DOI: https://doi.org/10.1051/jphyscol:1989570

THE PREPARATION AND PROPERTIES OF PECVD-MADE SnO₂ THIN FILMS p. C5-605

Y.P. CHEN, Z.Q. ZHENG, S.Y. LI et H.L. MA

DOI: https://doi.org/10.1051/jphyscol:1989571

PROPERTIES OF SnO₂ : F FILMS PREPARED BY APCVD p. C5-613

F. ZONG, S. HAN et S. LI

DOI: https://doi.org/10.1051/jphyscol:1989572

FUNDAMENTALS OF THE PLASMA INDUCED AND ASSISTED CVD : PLASMA PARAMETERS CONTROLLING THE CHEMICAL EQUILIBRIUM, THE DEPOSITION KINETICS AND THE PROPERTIES OF THE FILMS p. C5-617

S. VEPEK

DOI: https://doi.org/10.1051/jphyscol:1989573

PYROLYTIC DECOMPOSITION OF SILANE ON LASER-IRRADIATED SILICA SUBSTRATES p. C5-637

D. TONNEAU, Y. PAULEAU et G. AUVERT

DOI: https://doi.org/10.1051/jphyscol:1989574

LASER-INDUCED DECOMPOSITION OF METAL CARBONYLS FOR CHEMICAL VAPOR DEPOSITION OF MICROSTRUCTURES p. C5-647

D. TONNEAU, G. AUVERT et Y. PAULEAU

DOI: https://doi.org/10.1051/jphyscol:1989575

AMORPHOUS SILICON NITRIDE THIN FILMS PERFORMED IN TWO PECVD EXPERIMENTAL DEVICES p. C5-657

J. L. JAUBERTEAU, M. I. BARATON, MM. GERBIER, P. QUINTARD, J. DESMAISON, J. AUBRETON et A. CATHERINOT

DOI: https://doi.org/10.1051/jphyscol:1989576

PACVD OF "DIAMOND-LIKE" CARBON FILMS IN MICROWAVE MULTIPOLAR PLASMAS p. C5-665

M. MORIN et L. VANDENBULCKE

DOI: https://doi.org/10.1051/jphyscol:1989577

HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS p. C5-667

DING-KUN PENG, CHUN-LIN WANG et GUANG-YAO MENG

DOI: https://doi.org/10.1051/jphyscol:1989578

UV PHOTON ASSISTED CVD OF SiO₂ FOR LOW-DRIFT InP MISFET'S p. C5-675

P. DIMITRIOU, G. POST et A. SCAVENNEC

DOI: https://doi.org/10.1051/jphyscol:1989579

CHROMIZING-ALUMINIZING AND CHROMIZING-SILICONIZING COATING OF A FERRITIC STEEL p. C5-681

P.A. CHOQUET, M. A. HARPER et R.A. RAPP

DOI: https://doi.org/10.1051/jphyscol:1989580

TITANIUM-BASE COATINGS ON CERAMIC OXIDE SUBSTRATES p. C5-693

R. HILLEL, J.C. VIALA, X.L. LI et J. BOUIX

DOI: https://doi.org/10.1051/jphyscol:1989581

THIN FILM OF CERAMIC OXIDES BY MODIFIED CVD p. C5-695

J.L. DESCHANVRES, F. CELLIER, G. DELABOUGLISE, M. LABEAU, M. LANGLET et J.C. JOUBERT

DOI: https://doi.org/10.1051/jphyscol:1989582

LASER ASSISTED CVD SEMICONDUCTOR FILMS p. C5-707

XINGWEN LI, YINGMIN WANG, YINGCAI PONG, DENGYEAN SONG et BAOTONG LI

DOI: https://doi.org/10.1051/jphyscol:1989583

PROTECTION CONTRE L'OXYDATION DE POUDRES DE FER DESTINÉES A L'ENREGISTREMENT MAGNÉTIQUE PAR DÉPÔT DE SILICIUM EN LIT FLUIDISÉ p. C5-709

A. GALERIE, G. LE DÛ, M. CAILLET, P.A. MARI et B. PINGAUX

DOI: https://doi.org/10.1051/jphyscol:1989584

UV LIGHT-INDUCED DEPOSITION OF COPPER FILMS p. C5-719

H. ESROM, G. WAHL et U. KOGELSCHATZ

DOI: https://doi.org/10.1051/jphyscol:1989585

NITRIDE AND CARBIDE COATINGS SYNTHESIS ON THE SURFACE OF REFRACTORY METALS BY LASER ACTION p. C5-727

A.A. UGLOV, M.B. IGNAT'EV, A.G. GNEDOVETS et I.YU. SMUROV

DOI: https://doi.org/10.1051/jphyscol:1989586

TRENDS IN THE USE OF MOCVD TO PREPARE CERAMIC COATINGS p. C5-737

D.M. SCHLEICH

DOI: https://doi.org/10.1051/jphyscol:1989587

MOLECULAR PRECURSORS FOR HIGH Tc SUPERCONDUCTORS : ALCOXIDES AND β DIKETONATES OF Ln AND HEAVY MAIN GROUP ELEMENTS (Ba, Bi, Pb) p. C5-738

L.G. HUBERT-PFALZGRAS

DOI: https://doi.org/10.1051/jphyscol:1989588

PLASMA CVD USING ORGANOMETALLIC COMPOUNDS p. C5-739

H. SUHR, J. BALD, L. DEUTSCHMANN, A. ETSPÜLER, E. FEURER, H. GRÜNWALD, C. HAAG, H. HOLZSCHUH, C. OEHR, S. REICH et al. (5 de plus)

DOI: https://doi.org/10.1051/jphyscol:1989589

MOLECULAR ENGINEERING IN SEMICONDUCTOR TECHNOLOGY : BOROSILICATEGLASS BY DECOMPOSITION OF A MONOMOLECULAR PRECURSOR p. C5-747

H. TREICHEL, O. SPINDLER et Th. KRUCK

DOI: https://doi.org/10.1051/jphyscol:1989590

PREPARATION AND CHARACTERIZATION OF Ge-Si ALLOYS CARRIED OUT BY MOCVD p. C5-757

A. REYNES, C. DUFOR, P. MAZEROLLES et R. MORANCHO

DOI: https://doi.org/10.1051/jphyscol:1989591

EVIDENCE FOR FREE CARBON IN AMORPHOUS OMCVD SILICON-RICH Si_xC_1-x COATINGS p. C5-765

A. MESTARI, F. MAURY et R. MORANCHO

DOI: https://doi.org/10.1051/jphyscol:1989592

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