| Numéro |
J. Phys. Colloques
Volume 50, Numéro C5, Mai 1989
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-707 - C5-707 | |
| DOI | https://doi.org/10.1051/jphyscol:1989583 | |
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
J. Phys. Colloques 50 (1989) C5-707-C5-707
DOI: 10.1051/jphyscol:1989583
Department of Electronics, Hebei University, Baoding 071002, P.R. China
J. Phys. Colloques 50 (1989) C5-707-C5-707
DOI: 10.1051/jphyscol:1989583
LASER ASSISTED CVD SEMICONDUCTOR FILMS
XINGWEN LI, YINGMIN WANG, YINGCAI PONG, DENGYEAN SONG et BAOTONG LIDepartment of Electronics, Hebei University, Baoding 071002, P.R. China
Abstract
The paper reports the theoretical and experimental approches for laser assisted CVD semiconductor films such as Si and GaAs. In contrast with previous works, a special experiment design was used to separate the otpic and thermal effects of laser. Experimental results have shown that the deposition activation energy is lowered under the irradiation of cw IR or UV laser, so that the deposition rate increases by a factor which is associated with the laser frequency and the substrate temperature. Also, the technology for depositing high quality films and for LCVD in large area are discussed.