SEM MICROCHARACTERIZATION OF SEMICONDUCTORS BY EBIC AND CL p. C6-3 D.B. HOLT DOI: https://doi.org/10.1051/jphyscol:1989601 RésuméPDF (3.760 MB)
ELECTRON AND PHOTON - MATTER INTERACTION : ENERGY DISSIPATION AND INJECTION LEVEL p. C6-15 E. NAPCHAN DOI: https://doi.org/10.1051/jphyscol:1989602 RésuméPDF (830.3 KB)
MINORITY-CARRIER DIFFUSION LENGTH : MEASUREMENTS BY EBIC, CONNECTION TO MATERIALS MICROSTRUCTURE AND RELATION TO DEVICE PERFORMANCE p. C6-31 M. KITTLER et W. SEIFERT DOI: https://doi.org/10.1051/jphyscol:1989603 RésuméPDF (1.852 MB)
INTRINSIC OR EXTRINSIC ORIGIN OF THE RECOMBINATION AT EXTENDED DEFECTS p. C6-47 B. SIEBER DOI: https://doi.org/10.1051/jphyscol:1989604 RésuméPDF (626.6 KB)
MODELING THE EBIC MEASUREMENTS OF DIFFUSION LENGTHS AND THE RECOMBINATION CONTRAST AT EXTENDED DEFECTS p. C6-57 C. DONOLATO DOI: https://doi.org/10.1051/jphyscol:1989605 RésuméPDF (347.4 KB)
PERFORMANCE AND APPLICATIONS OF A STEM-CATHODOLUMINESCENCE SYSTEM p. C6-65 J.W. STEEDS DOI: https://doi.org/10.1051/jphyscol:1989606 RésuméPDF (1.375 MB)
CATHODOLUMINESCENCE IN DOUBLE HETEROJUNCTION LASERS p. C6-73 P. HENOC, B. AKAMATSU et R.B. MARTINS DOI: https://doi.org/10.1051/jphyscol:1989607 RésuméPDF (539.2 KB)
LATERAL MAPPING OF ATOMIC SCALE INTERFACE MORPHOLOGY AND DISLOCATIONS IN QUANTUM WELLS BY CATHODOLUMINESCENCE IMAGING p. C6-85 J. CHRISTEN et D. BIMBERG DOI: https://doi.org/10.1051/jphyscol:1989608 RésuméPDF (2.210 MB)
SCANNING-DLTS p. C6-101 O. BREITENSTEIN DOI: https://doi.org/10.1051/jphyscol:1989609 RésuméPDF (1.281 MB)
LBIC QUANTITATIVE MAPPING p. C6-111 J.P. BOYEAUX et A. LAUGIER DOI: https://doi.org/10.1051/jphyscol:1989610 RésuméPDF (1.699 MB)
ELECTRON AND OPTICAL BEAM TESTING OF INTEGRATED CIRCUITS p. C6-129 J.-P. COLLIN DOI: https://doi.org/10.1051/jphyscol:1989611 RésuméPDF (2.038 MB)
PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CL p. C6-145 A. JAKUBOWICZ DOI: https://doi.org/10.1051/jphyscol:1989612 RésuméPDF (3.205 MB)
HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT p. C6-153 J.-L. MAURICE DOI: https://doi.org/10.1051/jphyscol:1989613 RésuméPDF (53.50 KB)
ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD p. C6-154 C. CABANEL et J.-Y. LAVAL DOI: https://doi.org/10.1051/jphyscol:1989614 RésuméPDF (516.9 KB)
PHOTOCAPACITY STUDY OF GRAIN BOUNDARY RECOMBINATION IN SILICON p. C6-155 A. BRONIATOWSKI et D. BERNARD DOI: https://doi.org/10.1051/jphyscol:1989615 RésuméPDF (62.66 KB)
SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN Sb-DOPED GERMANIUM p. C6-156 N. TABET et C. MONTY DOI: https://doi.org/10.1051/jphyscol:1989616 RésuméPDF (37.19 KB)
EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS p. C6-157 A. IHLAL et G. NOUET DOI: https://doi.org/10.1051/jphyscol:1989617 RésuméPDF (60.51 KB)
EBIC MEASUREMENTS ON LOW ANGLE GRAIN BOUNDARIES p. C6-158 A. BARY et G. NOUET DOI: https://doi.org/10.1051/jphyscol:1989618 RésuméPDF (57 KB)
EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS p. C6-159 M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH, L. AMMOR et S. MARTINUZZI DOI: https://doi.org/10.1051/jphyscol:1989619 RésuméPDF (42.31 KB)
EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS p. C6-160 M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH et S. MARTINUZZI DOI: https://doi.org/10.1051/jphyscol:1989620 RésuméPDF (36.43 KB)
LBIC ANALYSIS FOR GRAIN-BOUNDARY CHARACTERIZATION IN INHOMOGENEOUS MATERIALS p. C6-161 H. EL GHITANI DOI: https://doi.org/10.1051/jphyscol:1989621 RésuméPDF (36.57 KB)
RECOMBINATION AT DISLOCATION LEVELS LOCATED IN THE SPACE CHARGE REGION. EBIC CONTRAST EXPERIMENTS AND THEORY p. C6-165 J.L. FARVACQUE et B. SIEBER DOI: https://doi.org/10.1051/jphyscol:1989622 RésuméPDF (47.66 KB)
IN SITU OBSERVATION OF DISLOCATION MOTION IN CdTe USING EBIC p. C6-166 J. KRONEWITZ et W. SCHRÖTER DOI: https://doi.org/10.1051/jphyscol:1989623 RésuméPDF (30.40 KB)
RECONSTRUCTION OF THE DEFECT GEOMETRY BY SIMULTANEOUS EBIC/CL MEASUREMENTS ; THEORY AND EXPERIMENTAL RESULTS p. C6-167 A. JAKUBOWICZ, M. BODE et H.-U. HABERMEIER DOI: https://doi.org/10.1051/jphyscol:1989624 RésuméPDF (30.11 KB)
TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si p. C6-168 T. SEKIGUCHI, Y. MIYAMURA et K. SUMINO DOI: https://doi.org/10.1051/jphyscol:1989625 RésuméPDF (51.11 KB)
LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON p. C6-169 A. CASTALDINI, A. CAVALLINI, A. POGGI et E. SUSI DOI: https://doi.org/10.1051/jphyscol:1989626 RésuméPDF (70.22 KB)
INTERNAL MEASUREMENTS FOR FAILURE ANALYSIS AND CHIP VERIFICATION OF VLSI CIRCUITS p. C6-173 J. KÖLZER et J. OTTO DOI: https://doi.org/10.1051/jphyscol:1989627 RésuméPDF (65.32 KB)
DETERMINATION OF ELECTRON BEAM CHARGING CONDITIONS OF OXIDES AT LOW ENERGY IN THE LOW DOSE RANGE p. C6-174 M. VALENZA, P. GIRARD et B. PISTOULET DOI: https://doi.org/10.1051/jphyscol:1989628 RésuméPDF (43.28 KB)
SCANNING ISOTHERMAL CURRENT TRANSIENT SPECTROSCOPY (SICTS) FOR DEEP LEVEL CHARACTERIZATION p. C6-175 Y. TOKUMARU, H. OKUSHI et H. NAKA DOI: https://doi.org/10.1051/jphyscol:1989629 RésuméPDF (38.54 KB)
HOLE-DIFFUSION LENGTH AND TRANSPORT PARAMETERS OF THIN CDS FILMS FROM A SCHOTTKY BARRIER p. C6-176 J. EBOTHE DOI: https://doi.org/10.1051/jphyscol:1989630 RésuméPDF (35.88 KB)
THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS p. C6-177 J. YUAN, S. BERGER et L.M. BROWN DOI: https://doi.org/10.1051/jphyscol:1989631 RésuméPDF (38.62 KB)
BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION p. C6-178 A. DJEMEL, J. CASTAING et J. CHEVALLIER DOI: https://doi.org/10.1051/jphyscol:1989632 RésuméPDF (39.44 KB)
CATHODOLUMINESCENCE AND POSITRON ANNIHILATION STUDY OF DEFECT DISTRIBUTION IN III-V WAFERS p. C6-179 F. DOMÍNGUEZ-ADAME, B. MÉNDEZ, J. PIQUERAS, N. DE DIEGO, J. LLOPIS et P. MOSER DOI: https://doi.org/10.1051/jphyscol:1989633 RésuméPDF (38.26 KB)
OBSERVATION OF GETTERING PHENOMENA AT DEFECTS IN GaAs BY SIMULTANEOUS EBIC/CL MEASUREMENTS p. C6-180 M. ECKSTEIN, A. JAKUBOWICZ, M. BODE et H.-U. HABERMEIER DOI: https://doi.org/10.1051/jphyscol:1989634 RésuméPDF (33.08 KB)
A NEW APPROACH FOR THE PHYSICAL INTERPRETATION OF TEMPERATURE DEPENDENT EBIC CONTRAST MEASUREMENTS p. C6-181 M. BODE et H.-U. HABERMEIER DOI: https://doi.org/10.1051/jphyscol:1989635 RésuméPDF (41.79 KB)
ON THE TWO-DIMENSIONAL DETERMINATION OF p-n JUNCTIONS WITH THE EBIC COLLECTION PROBABILITY p. C6-182 W. HOPPE et M. KITTLER DOI: https://doi.org/10.1051/jphyscol:1989636 RésuméPDF (32.14 KB)
POSSIBILITIES OF FORMATION OF BRIGHT EBIC CONTRASTS DUE TO CRYSTAL DEFECTS IN SILICON p. C6-183 H. BLUMTRITT, M. KITTLER et W. SEIFERT DOI: https://doi.org/10.1051/jphyscol:1989637 RésuméPDF (28.01 KB)
MAJORITY CARRIER ASSESSMENT BY EBIC : DETERMINATION OF DOPANT CONCENTRATION AT COMPOSITION INHOMOGENEITIES p. C6-184 C. FRIGERI DOI: https://doi.org/10.1051/jphyscol:1989638 RésuméPDF (50.44 KB)
DOPING PROFILE INSPECTION IN SILICON BY LOW ACCELERATION VOLTAGE SEM-EBIC p. C6-185 R. KUHNERT DOI: https://doi.org/10.1051/jphyscol:1989639 RésuméPDF (45.69 KB)
MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC-SEM p. C6-186 L.W. SNYMAN DOI: https://doi.org/10.1051/jphyscol:1989640 RésuméPDF (36.26 KB)
EBIC MEASUREMENT OF BULK AND SURFACE RECOMBINATION IN p-TYPE SILICON : INFLUENCE OF OXIDATION AND HYDROGENATION p. C6-187 I. DELIDAIS, P. MAUGIS, D. BALLUTAUD, N. TABET et J.-L. MAURICE DOI: https://doi.org/10.1051/jphyscol:1989641 RésuméPDF (40.07 KB)
