Supplément au Journal de Physique Colloques

LATERAL TRANSPORT IN SUPERLATTICES p. C7-3

K. Hess

DOI: https://doi.org/10.1051/jphyscol:1981701

HOT ELECTRON EFFECTS IN A 2D ELECTRON GAS AT THE GaAs/AlGaAs INTERFACE p. C7-19

M. Inoue, S. Hiyamizu, H. Hida, H. Hashimoto et Y. Inuishi

DOI: https://doi.org/10.1051/jphyscol:1981702

ENERGY LOSS OF WARM ELECTRONS AT THE INTERFACE OF (100) SILICON MOSFETs p. C7-25

W. Hönlein et G. Landwehr

DOI: https://doi.org/10.1051/jphyscol:1981703

MICROWAVE EXPERIMENTS INCLUDING AVALANCHE p. C7-33

V. Dienys et A. Dargys

DOI: https://doi.org/10.1051/jphyscol:1981704

PERIODIC OSCILLATIONS AND TURBULENCE OF HOT-CARRIER PLASMA AT 4.2 K IN n-GaAs p. C7-51

K. Aoki, T. Kobayashi et K. Yamamoto

DOI: https://doi.org/10.1051/jphyscol:1981705

AN IMPACT IONIZATION MODEL FOR CURRENT CONTROLLED NEGATIVE RESISTANCE AND g-r INDUCED NONEQUILIBRIUM PHASE TRANSITIONS p. C7-57

E. Schöll

DOI: https://doi.org/10.1051/jphyscol:1981706

BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE p. C7-63

J.Y. Tang, H. Shichijo, K. Hess et G.J. Iafrate

DOI: https://doi.org/10.1051/jphyscol:1981707

NON STEADY STATE CARRIER TRANSPORT IN SEMICONDUCTOR, APLICATION TO THE MODELLING OF SUBMICRON DEVICES p. C7-73

E. Constant et B. Boittiaux

DOI: https://doi.org/10.1051/jphyscol:1981708

NON-EQUILIBRIUM HOT-CARRIER DIFFUSION PHENOMENON IN SEMICONDUCTORS I. A THEORETICAL NON-MARKOVIAN APPROACH p. C7-95

J. Zimmerman, P. Lugli et D.K. Ferry

DOI: https://doi.org/10.1051/jphyscol:1981709

NON-EQUILIBRIUM HOT-CARRIER DIFFUSION PHENOMENON IN SEMICONDUCTORS II. AN EXPERIMENTAL MONTE CARLO APPROACH p. C7-103

P. Lugli, J. Zimmermann et D.K. Ferry

DOI: https://doi.org/10.1051/jphyscol:1981710

THE METHOD OF MOMENTS FOR THE ANALYSIS OF TRANSIENT HOT-CARRIER PHENOMENA p. C7-111

L. Reggiani, R. Brunetti et C. Jacoboni

DOI: https://doi.org/10.1051/jphyscol:1981711

ON INTERVALLEY DIFFUSION OF HOT-ELECTRONS p. C7-117

R. Brunetti, C. Jacoboni et L. Reggiani

DOI: https://doi.org/10.1051/jphyscol:1981712

FREQUENCY AND WAVEVECTOR DEPENDENT DIFFUSION COEFFICIENT OF ELECTRONS FROM MONTE CARL0 CALCULATIONS p. C7-123

C. Jacoboni, L. Reggiani et R. Brunetti

DOI: https://doi.org/10.1051/jphyscol:1981713

DIFFUSION OF ELECTRONS AND HOLES IN DOPED SEMICONDUCTORS AT HIGH LATTICE AND ELECTRONIC TEMPERATURES p. C7-131

M. Wautelet

DOI: https://doi.org/10.1051/jphyscol:1981714

INHIBITED RELAXATION OF NONRESONANTLY EXCITED ELECTRONS IN A COLD LATTICE p. C7-137

D. Bimberg, H. Münzel et A. Steckenborn

DOI: https://doi.org/10.1051/jphyscol:1981715

THE EFFECT OF ELECTRON-ELECTRON SCATTERING ON HOT PHOTOEXCITED ELECTRONS IN GaAs p. C7-143

P.A. Maksym

DOI: https://doi.org/10.1051/jphyscol:1981716

HOT ELECTRON EMISSION FROM SILICON UNDER PULSED LASER EXCITATION p. C7-149

M. Bensoussan et J.M. Moison

DOI: https://doi.org/10.1051/jphyscol:1981717

HOT ELECTRON DEVICES FOR MILLIMETRE AND SUBMILLIMETRE APPLICATIONS p. C7-157

H.D. Rees

DOI: https://doi.org/10.1051/jphyscol:1981718

THEORETICAL STUDY OF 100 GHz GaAs TRANSFERRED-ELECTRON DEVICES p. C7-171

P.A. Rolland, M.R. Friscourt, G. Salmer et E. Constant

DOI: https://doi.org/10.1051/jphyscol:1981719

UNIDIMENSIONAL PARTICULE MODEL OF CONDUCTION IN N TYPE GaAs AT LOW TEMPERATURE : CONTACTS INFLUENCE p. C7-177

P. Hesto, J.F. Pone et R. Castagné

DOI: https://doi.org/10.1051/jphyscol:1981720

HOT CARRIERS IN REDUCED GEOMETRY SURFACE-CHANNEL CHARGE-COUPLED DEVICES p. C7-183

A. Touboul, J.C. Lopez et G. Lecoy

DOI: https://doi.org/10.1051/jphyscol:1981721

THE v-E RELATION AND THE FIELD DISTRIBUTION IN SUBMICRON MOSFET'S p. C7-193

J.P. Leburton et G. Dorda

DOI: https://doi.org/10.1051/jphyscol:1981722

HOT CARRIER SPACE AND TIME DEPENDENT TRANSIENTS IN SHORT CHANNEL GALLIUM ARSENIDE DEVICES p. C7-201

H.L. Grubin, G.J. Iafrate et D.K. Ferry

DOI: https://doi.org/10.1051/jphyscol:1981723

A SEMIPARTICULAR SIMULATION TO STUDY HIGH FREQUENCY BEHAVIOUR OF HOT CARRIERS IN IMPATT DEVICES p. C7-207

D. Lippens et E. Constant

DOI: https://doi.org/10.1051/jphyscol:1981724

NOISE AND DIFFUSIVITY OF HOT ELECTRONS IN n-TYPE InSb p. C7-215

V. Bareikis, A. Galdikas, R. Miliu¡yté, J. Pozhela et Viktoravičius

DOI: https://doi.org/10.1051/jphyscol:1981725

HOT HOLES AND NOISE IN SPACE CHARGE LIMITED CURRENT FLOW IN P-TYPE SILICON p. C7-221

N. Sawaki, T. Ishikawa, M. Morohashi et T. Nishinaga

DOI: https://doi.org/10.1051/jphyscol:1981726

HOT ELECTRON NOISE PROPERTIES OF SEMICONDUCTORS IN THE NON-ZERO COLLISION DURATION REGIME p. C7-227

P. Das, D.K. Ferry et H. Grubin

DOI: https://doi.org/10.1051/jphyscol:1981727

A SUGGESTION OF NOISE EXPERIMENT FOR SHOWING BALLISTIC TRANSPORT p. C7-235

P. Hesto, J.C. Vaissière, D. Gasquet, R. Castagné et J.P. Nougier

DOI: https://doi.org/10.1051/jphyscol:1981728

QUANTUM PHYSICS OF RETARDED TRANSPORT p. C7-245

J.R. Barker

DOI: https://doi.org/10.1051/jphyscol:1981729

TRANSPORT IN SUBMICRON DEVICES p. C7-253

D.K. Ferry

DOI: https://doi.org/10.1051/jphyscol:1981730

EXPERIMENTAL STUDIES OF BALLISTIC TRANSPORT IN SEMICONDUCTORS p. C7-263

L.F. Eastman

DOI: https://doi.org/10.1051/jphyscol:1981731

A CONVENIENT GAUGE TREATMENT OF THE HIGH ELECTRIC FIELD ELECTRON DISTRIBUTION FUNCTION p. C7-271

D. Calecki et N. Pottier

DOI: https://doi.org/10.1051/jphyscol:1981732

FIELD DEPENDENT SCATTERING AND HOT ELECTRON KINETICS p. C7-277

D.C. Herbert et S.J. Till

DOI: https://doi.org/10.1051/jphyscol:1981733

DURATION OF COLLISIONS IN SEMICONDUCTORS p. C7-283

J.P. Nougier, J.C. Vaissière et D. Gasquet

DOI: https://doi.org/10.1051/jphyscol:1981734

QUANTUM THEORY OF HOT ELECTRON-PHONON TRANSPORT IN INHOMOGENEOUS SEMICONDUCTORS p. C7-293

J.R. Barker et D. Lowe

DOI: https://doi.org/10.1051/jphyscol:1981735

A NON-PERTURBATIVE GREEN FUNCTION TECHNIQUE FOR CALCULATIONS OF NON-LINEAR TRANSPORT PROPERTIES p. C7-301

A.P. Jauho, J.W. Wilkins et F.P. Esposito

DOI: https://doi.org/10.1051/jphyscol:1981736

UTILIZATION OF QUANTUM DISTRIBUTION FUNCTIONS FOR ULTRA-SUBMICRON DEVICE TRANSPORT p. C7-307

G.J. Iafrate, H.L. Grubin et D.K. Ferry

DOI: https://doi.org/10.1051/jphyscol:1981737

NONLINEAR CONDUCTIVITY IN QUASI-ONE-DIMENSIONAL ORGANIC CRYSTALS p. C7-315

E.M. Conwell et N.C. Banik

DOI: https://doi.org/10.1051/jphyscol:1981738

THE MULTIVALUED DISTRIBUTION OF ELECTRONS BETWEEN EQUIVALENT VALLEYS p. C7-323

M. Asche, H. Kostial et O.G. Sarbey

DOI: https://doi.org/10.1051/jphyscol:1981739

ELECTRON TRANSFER EFFECT IN INTRINSIC TELLURIUM SINGLE CRYSTALS p. C7-329

R. Asauskas, V. Balynas, Z. Dobrovolskis, A. Krotkus et W. Hoerstel

DOI: https://doi.org/10.1051/jphyscol:1981740

HOT ELECTRON TRANSPORT IN THE Ga_1-xAl_xAs SYSTEM p. C7-335

G. Hill et P.N. Robson

DOI: https://doi.org/10.1051/jphyscol:1981741

TIME-DEPENDENT CARRIER VELOCITIES IN III-V COMPOUNDS CALCULATED BY THE LEGENDRE-POLYNOMIAL ITERATIVE METHOD p. C7-343

S.C. van Someren Greve et Th. G. van de Roer

DOI: https://doi.org/10.1051/jphyscol:1981742

BALLISTIC TRANSPORT IN SEMICONDUCTORS : A DISPLACED MAXWELLIAN FORMULATION p. C7-351

E. Rosencher

DOI: https://doi.org/10.1051/jphyscol:1981743

TRANSIENT REGIMES OF HOT CARRIERS IN p-TYPE SILICON p. C7-357

L. Reggiani, J.C. Vaissière, J.P. Nougier et D. Gasquet

DOI: https://doi.org/10.1051/jphyscol:1981744

DIRECT MEASUREMENT OF VELOCITY OVERSHOOT BY HOT-ELECTRON, SUBMILLIMETER WAVE CONDUCTIVITY IN Si INVERSION LAYERS p. C7-369

S.J. Allen Jr., D.C. Tsui, F. DeRosa, K.K. Thornber et B.A. Wilson

DOI: https://doi.org/10.1051/jphyscol:1981745

PECULIAR HOT ELECTRON EFFECTS IN CROSSED ELECTRIC AND MAGNETIC FIELDS p. C7-377

T. Kurosawa

DOI: https://doi.org/10.1051/jphyscol:1981746

HOT CARRIER POPULATION INVERSION IN p-Ge p. C7-387

S. Komiyama et R. Spies

DOI: https://doi.org/10.1051/jphyscol:1981747

FAR-INFRARED CYCLOTRON RESONANCE OF PHOTOEXCITED HOT CARRIERS IN INDIUM ANTIMONIDE p. C7-393

E. Otsuka, T. Ohyama et K. Fujii

DOI: https://doi.org/10.1051/jphyscol:1981748

NON MAXWELLIAN ELECTRON DISTRIBUTION FUNCTION IN GaAs p. C7-399

G. Lindemann et E. Gornik

DOI: https://doi.org/10.1051/jphyscol:1981749

MAGNETOPHONON OSCILLATIONS IN THE LIFETIME OF HOT PHOTOEXCITED CARRIERS p. C7-407

F.J. Schmitte, G. Bauer et W. Zawadzki

DOI: https://doi.org/10.1051/jphyscol:1981750

HOT ELECTRON POPULATION INVERSION AND BULK NDC IN SEMICONDUCTORS p. C7-413

V.A. Kozlov

DOI: https://doi.org/10.1051/jphyscol:1981751

ELECTRON-PHONON INTERACTIONS IN SEMICONDUCTORS : PHONON TRANSPORT AND DECAY p. C7-423

R.G. Ulbrich

DOI: https://doi.org/10.1051/jphyscol:1981752

THEORY OF ONE- AND TWO-PHONON DEFORMATION POTENTIALS IN SEMICONDUCTORS p. C7-431

P. Kocevar, K. Baumann, P. Vogl et W. Pötz

DOI: https://doi.org/10.1051/jphyscol:1981753

PICOSECOND LUMINESCENCE STUDIES OF HOT CARRIER RELAXATION IN PURE AND HIGHLY DOPED GaAs p. C7-437

W. Graudszus et E.O. Goebel

DOI: https://doi.org/10.1051/jphyscol:1981754

INVESTIGATION OF HOT CARRIER RELAXATION WITH PICOSECOND LASER PULSES p. C7-445

J. Shah

DOI: https://doi.org/10.1051/jphyscol:1981755

PICOSECOND INTERBAND SATURATION AND INTRABAND RELAXATION OF PHOTOEXCITED CARRIERS IN GERMANIUM p. C7-463

A.L. Smirl, A. Miller, G.P. Perryman et T.F. Boggess

DOI: https://doi.org/10.1051/jphyscol:1981756

SPATIAL EXPANSION OF HOT ELECTRON-HOLE PLASMA AT HIGH DENSITY IN CdSe p. C7-471

A. Cornet, M. Pugnet, J. Collet, T. Amand et M. Brousseau

DOI: https://doi.org/10.1051/jphyscol:1981757

OPTICAL PICOSECOND STUDIES OF HOT CARRIERS IN AMORPHOUS SEMICONDUCTORS p. C7-477

Z. Vardeny et J. Tauc

DOI: https://doi.org/10.1051/jphyscol:1981758

Le Journal de Physique Colloques

Volume 42 / Numéro C7 (Octobre 1981)

Third International Conference on Hot Carriers in Semiconductors