| Numéro |
J. Phys. Colloques
Volume 42, Numéro C7, Octobre 1981
Third International Conference on Hot Carriers in Semiconductors
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|---|---|---|
| Page(s) | C7-137 - C7-141 | |
| DOI | https://doi.org/10.1051/jphyscol:1981715 | |
Third International Conference on Hot Carriers in Semiconductors
J. Phys. Colloques 42 (1981) C7-137-C7-141
DOI: 10.1051/jphyscol:1981715
Institut für Halbleitertechnik und Basislabor SFB 56, RWTH Aachen, Templergraben 55, D-5100 Aachen, West Germany
J. Phys. Colloques 42 (1981) C7-137-C7-141
DOI: 10.1051/jphyscol:1981715
INHIBITED RELAXATION OF NONRESONANTLY EXCITED ELECTRONS IN A COLD LATTICE
D. Bimberg, H. Münzel et A. SteckenbornInstitut für Halbleitertechnik und Basislabor SFB 56, RWTH Aachen, Templergraben 55, D-5100 Aachen, West Germany
Abstract
The lattice temperature T1 and the free electron temperature Te are both determined spectroscopically from cw photoluminescence experiments after nonresonant excitation for the direct gap semiconductors GaAs and InP in the temperature range 1.5K<T1<40K. Depending on the excitation intensity and wavelength, the material and its doping, Te, does not decrease any further with decreasing T1 but reaches a saturation value. The finite lifetime of the charge carriers enforces them to dissipate their excess energy at relatively high temperatures. Detailed calculations of energy loss rates are shown to be in agreement with the results of time resolved experiments