Supplément au Journal de Physique Colloques

LIQUID PHASE EPITAXIAL GROWTH OF In_xGa_1-xAs/ InP NEAR SOLID INSTABILITY p. C5-3

M.C. Joncour, J.L. Benchimol, J. Burgeat et M. Quillec

DOI: https://doi.org/10.1051/jphyscol:1982501

INTERFACE SPINODAL DECOMPOSITION IN LPE In_xGa_1-xAs_yP_1-y LATTICE MATCHED TO InP p. C5-11

F. Glas, M.M.J. Treacy, M. Quillec et H. Launois

DOI: https://doi.org/10.1051/jphyscol:1982502

THERMODYNAMIC ASPECTS OF ORGANOMETALLIC VPE p. C5-17

G.B. Stringfellow

DOI: https://doi.org/10.1051/jphyscol:1982503

INSTABILITY CRITERIA IN TERNARY AND QUATERNARY I I I-V EPITAXIAL SOLID SOLUTIONS p. C5-19

B. de Cremoux

DOI: https://doi.org/10.1051/jphyscol:1982504

LOW-TEMPERATURE GROWTH CONDITIONS AND PROPERTIES OF AlGa (As) Sb ON GaSb SUBSTRATE BY LPE p. C5-29

S. Fujita, N. Hamaguchi, Y. Takeda et A. Sasaki

DOI: https://doi.org/10.1051/jphyscol:1982505

THE EFFECT OF Ge ON THE LIQUIDUS AND SOLIDUS IN THE SYSTEM AlGaAs : Ge p. C5-39

D. Dutartre, M. Gavand, L. Mayet, A. Laugier et I. Ansara

DOI: https://doi.org/10.1051/jphyscol:1982506

LE MODELE "D. L. P. - ORDRE-CONTRAINTE" : INFLUENCE DU DESORDRE CHIMIQUE ET DU SUBSTRAT D'EPITAXIE SUR LES DIAGRAMMES D'EQUILIBRE TERNAIRES & QUATERNAIRES I I I-V p. C5-47

A. Marbeuf et J.C. Guillaume

DOI: https://doi.org/10.1051/jphyscol:1982507

LPE-GROWTH OF HIGH PURITY Ga_0.47In_0.53As^- AND Ga_0.31In_0.69As_0.69P_0.31^- LAYERS LATTICE MATCHED TO InP p. C5-61

R. Linnebach, K. Hess, K. Lösch et G. Schemmel

DOI: https://doi.org/10.1051/jphyscol:1982508

SELF-SUPERSATURATION IN LIQUID PHASE EPITAXY OF InGaAs ON InP : A SIMPLIFIED L.P.E. TECHNIQUE p. C5-69

J.L. Benchimol et M. Quillec

DOI: https://doi.org/10.1051/jphyscol:1982509

LPE GROWTH AND CHARACTERIZATION OF CADMIUM AND BERYLLIUM DOPED InP AND In_.7Ga_.3As_.6P_.4 p. C5-73

A. Perronnet, J. Magnabal, D. Sigogne, D. Huet et J. Benoit

DOI: https://doi.org/10.1051/jphyscol:1982510

THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs p. C5-87

J.P. Duchemin

DOI: https://doi.org/10.1051/jphyscol:1982511

KINETIC THEORY OF AUTODOPING IN REDUCED PRESSURE EPITAXY OF SILICON p. C5-93

M. Onuki et A. Nishikawa

DOI: https://doi.org/10.1051/jphyscol:1982512

DOPANT INCORPORATION DURING LP-VPE OF GaAs p. C5-101

E. Veuhoff, A. Sauerbrey, N. Pütz, M. Heyen et P. Balk

DOI: https://doi.org/10.1051/jphyscol:1982513

LOW PRESSURE VAPOUR PHASE EPITAXY OF GaAs –THE GROWTH RATE LIMITING PROCESSES p. C5-111

J.L. Gentner et R. Cadoret

DOI: https://doi.org/10.1051/jphyscol:1982514

THE OMVPE GROWTH OF GaAs AND GaAlAs ON A LARGE SCALE p. C5-119

S.D. Hersee, M. Baldy, P. Assenat, D. Hyghe, M. Bonnet et J.P. Duchemin

DOI: https://doi.org/10.1051/jphyscol:1982515

THE EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE p. C5-129

G. Duggan, P. Dawson, C.T. Foxon et G.W. 't Hooft

DOI: https://doi.org/10.1051/jphyscol:1982516

INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs p. C5-135

H. Jung, H. Künzel et K. Ploog

DOI: https://doi.org/10.1051/jphyscol:1982517

THE INTERACTION OF HYDROGEN WITH GaAs SURFACES p. C5-145

R.Z. Bachrach et R.D. Bringans

DOI: https://doi.org/10.1051/jphyscol:1982518

SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82 p. C5-153

J.C. Bean et S.R. McAfee

DOI: https://doi.org/10.1051/jphyscol:1982519

SILICON MODULATION DOPING STRUCTURES USING MULTI-STEP MOLECULAR BEAM EPITAXY AND ION IMPLANTATION p. C5-173

T. de Jong, W.A.S. Douma et F.W. Saris

DOI: https://doi.org/10.1051/jphyscol:1982520

INFLUENCE OF GROWTH CONDITIONS AND OF ALLOY COMPOSITION ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE Al_xGa_1-xAs (0.2 = x = 0.4) p. C5-175

H. Künzel, H. Jung, E. Schubert et K. Ploog

DOI: https://doi.org/10.1051/jphyscol:1982521

QUANTUM WELL AND MODULATION DOPED GaAs - Ga_l-xAl_xAs HETEROSTRUCTURES p. C5-185

P.M. Frijlink et J. Maluenda

DOI: https://doi.org/10.1051/jphyscol:1982522

THE GROWTH OF QUANTUM WELL GaAs/GaAlAs LASER STRUCTURES p. C5-193

S.D. Hersee, M. Baldy et P. Assenat

DOI: https://doi.org/10.1051/jphyscol:1982523

PREPARATION AND CHARACTERIZATION OF STRAINED SUPERLATTICES STRUCTURES OF InGaAs/GaAs BY MBE p. C5-201

L. Goldstein, M. Quillec, K. Rao, P. Hénoc, J.M. Masson et J.Y. Marzin

DOI: https://doi.org/10.1051/jphyscol:1982524

INFLUENCE OF MBE GROWTH CONDITIONS ON THE PROPERTIES OF Al_xGa_1-xAs/GaAs HETEROSTRUCTURES p. C5-209

H. Morkoç

DOI: https://doi.org/10.1051/jphyscol:1982525

THE VAPOR PHASE INTERACTION OF TRIMETHYLALUMINUM WITH GRAPHITE DURING OMVPE p. C5-221

D.W. Kisker, D.A. Stevenson, J.N. Miller et G.B. Stringfellow

DOI: https://doi.org/10.1051/jphyscol:1982526

INFLUENCE OF GRAPHITE BAFFLES IN GaAs/Ga AlAs OM-VPE GROWTH p. C5-229

R. Azoulay, L. Dugrand et E.V.K. Kao

DOI: https://doi.org/10.1051/jphyscol:1982527

TEMPERATURES AND FLOWS IN HORIZONTAL EPI REACTORS p. C5-235

L.J. Giling

DOI: https://doi.org/10.1051/jphyscol:1982528

THE DESIGN AND OPTIMISATION OF A LARGE SCALE VPE REACTOR FOR THE GROWTH OF GaAs BY THE HALIDE PROCESS p. C5-249

I.H. Goodridge

DOI: https://doi.org/10.1051/jphyscol:1982529

MULTICHAMBER REACTORS : A SOLUTION TO THE PROBLEM OF GRADED HETEROINTERFACES IN HOT-WALL VPE SYSTEMS p. C5-259

G. Beuchet, D. Clemensat et P. Thebault

DOI: https://doi.org/10.1051/jphyscol:1982530

ANISOTROPY IN SULPHUR DOPING OF GaAs GROWN BY V.P.E. p. C5-267

J.L. Gentner

DOI: https://doi.org/10.1051/jphyscol:1982531

Al_xGa_1-xAs/Al_yGa_1-yAs VISIBLE LASERS GROWN BY MOCVD p. C5-271

Y. Mori, O. Matsuda, M. Ikeda, K. Kaneko et N. Watanabe

DOI: https://doi.org/10.1051/jphyscol:1982532

H₂Se DOPING OF MOCVD GROWN GaAs AND GaAlAs p. C5-281

R.W. Glew

DOI: https://doi.org/10.1051/jphyscol:1982533

THE VAPOUR PHASE ETCHING AND N-TYPE DOPING OF INDIUM PHOSPHIDE p. C5-287

P. Davies, N.B. Hasdell et P.L. Giles

DOI: https://doi.org/10.1051/jphyscol:1982534

GaAs METAL ORGANICS VAPOUR PHASE EPITAXY : RESIDUAL CARBON p. C5-303

B. el Jani, M. Leroux, J.C. Grenet et P. Gibart

DOI: https://doi.org/10.1051/jphyscol:1982535

SELECTIVE ETCHING OF n-TYPE GaAs IN A CrO₃-HF-H₂O SYSTEM UNDER LASER ILLUMINATION p. C5-313

J.L. Weyher et J. Van de Ven

DOI: https://doi.org/10.1051/jphyscol:1982536

GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM ARSENIDE BY MOLECULAR BEAM EPITAXY p. C5-321

S.C. Palmateer, P.A. Maki, M.A. Hollis, L.F. Eastman, I.D. Ward et C. Evans

DOI: https://doi.org/10.1051/jphyscol:1982537

ORGANOMETALLIC EPITAXIAL GROWTH OF GaAs_1-xP_x p. C5-323

L. Samuelson, P. Omling, H. Titze et H.G. Grimmeiss

DOI: https://doi.org/10.1051/jphyscol:1982538

PARAMETRIC STUDIES OF GaAs GROWTH BY METALORGANIC MOLECULAR BEAM EPITAXY p. C5-339

N. Vodjdani, A. Lemarchand et H. Paradan

DOI: https://doi.org/10.1051/jphyscol:1982539

DEEP STATES AND SURFACE PROCESSES IN GaAs GROWN BY MOLECULAR BEAM EPITAXY p. C5-351

P. Blood, J.J. Harris, B.A. Joyce et J.H. Neave

DOI: https://doi.org/10.1051/jphyscol:1982540

THERMODYNAMIC STUDIES OF THE SILICON TRANSPORT IN LPE GROWTH ON InP SUBSTRATES p. C5-357

C. Chatillon et C. Bernard

DOI: https://doi.org/10.1051/jphyscol:1982541

OPTIMISATION OF Sn DOPING IN GaAls/ GaAs DH LASERS GROWN BY MBE p. C5-377

J.F. Stagg, P.J. Hulyer, C.T. Foxon et D. Ashenford

DOI: https://doi.org/10.1051/jphyscol:1982542

LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF Ga_xIn_1-xAs/ InP p. C5-383

K.H. Goetz, A.V. Solomonov, D. Bimberg, H. Jürgensen, M. Razeghi et J. Selders

DOI: https://doi.org/10.1051/jphyscol:1982543

GROWTH OF InP-EPITAXIAL LAYERS : A COMPARISON BETWEEN MOVPE- AND VPE-TECHNIQUES p. C5-393

K.W. Benz, H. Haspeklo et R. Bosch

DOI: https://doi.org/10.1051/jphyscol:1982544

EFFECTS OF GROWTH CONDITIONS ON DEEP-LEVEL DEFECTS IN VPE AND LPE GaAs p. C5-401

Sheng S. et W.L. Wang

DOI: https://doi.org/10.1051/jphyscol:1982545

GROWTH OF IV-VI, II-VI AND III-V SEMICONDUCTOR COMPOUNDS BY HOT WALL EPITAXY p. C5-405

J. Humenberger, M. Sadeghi, E. Gruber, G. Elsinger, H. Sitter et A. Lopez-Otero

DOI: https://doi.org/10.1051/jphyscol:1982546

PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON p. C5-411

D. Barbier, A. Laugier et A. Cachard

DOI: https://doi.org/10.1051/jphyscol:1982547

CROISSANCE EPITAXIQUE D'ARSENIURE DE GALLIUM PAR DEPOT CHIMIQUE EN PHASE VAPEUR A PARTIR D'UN NOUVEAU COMPOSE ORGANOMETALLIQUE LE MONOCHLORODIMETHYLGALLIUM-TRIETHYLARSINE p. C5-421

A. Zaouk et G. Constant

DOI: https://doi.org/10.1051/jphyscol:1982548

PROPERTIES OF EPITAXIAL Si FILMS GROWN ON YTTRIA-STABILIZED CUBIC ZIRCONIA SUBSTRATES BY CHEMICAL VAPOR DEPOSITI ON p. C5-427

I. Golecki, H.M. Manasevit, J.J. Yang, L.A. Moudy, J.E. Mee et T.J. Magee

DOI: https://doi.org/10.1051/jphyscol:1982549

INFLUENCE DE LA TEMPERATURE D'EPITAXIE SUR LA QUALITE CRISTALLINE, LES PERFORMANCES ELECTRIQUES ET LE TYPE DE CONDUCTION DES COUCHES DE Cd_xHg_1-xTe PREPAREES EN EPITAXIE PAR JETS MOLECULAIRES p. C5-429

A. Million et J.P. Faurie

DOI: https://doi.org/10.1051/jphyscol:1982550

OBSERVATIONS ON THE GROWTH OF GOOD SURFACE QUALITY, HIGH MOBILITY EPITAXIAL LAYERS OF InP BY THE In-PCl₃-H₂ TECHNIQUE p. C5-433

D.J. Ashen, D.A. Anderson, N. Apsley, M.T. Emeny et L.L. Taylor

DOI: https://doi.org/10.1051/jphyscol:1982551

MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF In_0.53Ga_0.47As AND InP SUBSTRATE p. C5-445

D. Bonnevie et D. Huet

DOI: https://doi.org/10.1051/jphyscol:1982552

EPITAXIE EN PHASE LIQUIDE DE DOUBLES HETEROSTRUCTURES LASER In^1-xGa^xAs^yP^1-y/InP (x ≈ 0,5y, y ≈ 0,9) EMETTANT AU VOISINAGE DE 1,55µm ET CARACTERISEES PAR UNE FAIBLE DENSITE DE COURANT DE SEUIL p. C5-453

J.P. Jicquel, A. Perronnet, H. Lebled, M. Matabon et J. Benoit

DOI: https://doi.org/10.1051/jphyscol:1982553

PROBLEMES LIES A LA REALISATION PAR EPITAXIE EN PHASE LIQUIDE DE LASERS A RUBAN ENTERRE In_1-xGa_xAs_yP_1-y (λ = 1,3 µm et 1,5 µm) DE FAIBLE LARGEUR (1 à 3 µm) p. C5-455

R. Landreaux, O. Boulard, J.P. Jicquel, H. Lebled, L. Legouezigou, Y. Louis, J. Magnabal, D. Sigogne et J. Benoit

DOI: https://doi.org/10.1051/jphyscol:1982554

VAPOUR PHASE GROWTH OF GaAs BY THE HYDRIDE TECHNIQUE p. C5-457

I.A. Dorrity

DOI: https://doi.org/10.1051/jphyscol:1982555

INFLUENCE DU PROCESSUS D'ELABORATION SUR LES DEFAUTS CRISTALLOGRAPHIQUES DANS LES COUCHES DE GaAs EPITAXIEES PAR JETS MOLECULAIRES p. C5-465

M. Bafleur et A. Munoz-Yague

DOI: https://doi.org/10.1051/jphyscol:1982556

ELABORATION DE COUCHES EPITAXIEES DE SILICIUM PAR PULVERISATION IONIQUE p. C5-473

C. Schwebel, F. Meyer et G. Gautherin

DOI: https://doi.org/10.1051/jphyscol:1982557

GROWTH AND PROPERTIES OF 1,3 AND 1.5µm GaInAsP DOUBLE HETEROSTRUCTURE WITH DIFFERENT ACTIVE LAYER THICKNESSES p. C5-481

G. Chaminant, M. Gilleron, J. Charil, P. Devoldere et J.C. Bouley

DOI: https://doi.org/10.1051/jphyscol:1982558

PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga_1-xAl_xAs DOUBLE HETEROSTRUCTURE LASERS p. C5-483

F. Alexandre, N. Duhamel, P. Ossart, J.M. Masson et C. Meillerat

DOI: https://doi.org/10.1051/jphyscol:1982559

A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS p. C5-491

A.K. Chatterjee, M.M. Faktor, R.H. Moss et E.A.D. White

DOI: https://doi.org/10.1051/jphyscol:1982560

Le Journal de Physique Colloques

Volume 43 / Numéro C5 (Décembre 1982)

Colloque International sur l'Epitaxie des Semiconducteurs / Epitaxial Growth of Semiconductor Material

LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY p. C5-3

INTERFACE SPINODAL DECOMPOSITION IN LPE InxGa1-xAsyP1-y LATTICE MATCHED TO InP p. C5-11