| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-157 - C6-157 | |
| DOI | https://doi.org/10.1051/jphyscol:1989617 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-157-C6-157
DOI: 10.1051/jphyscol:1989617
Laboratoire d'Etudes et de Recherches sur les Matériaux, ISMRa-Université de Caen, F-14032 Caen Cedex, France
International Workshop
J. Phys. Colloques 50 (1989) C6-157-C6-157
DOI: 10.1051/jphyscol:1989617
EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS
A. IHLAL et G. NOUETLaboratoire d'Etudes et de Recherches sur les Matériaux, ISMRa-Université de Caen, F-14032 Caen Cedex, France
Abstract
Two silicon bicrystals have been analyzed by EBIC to determine the evolution of minority carrier properties such as diffusion length, Lp, and recombination velocity, Vg, after different thermal treatments. The geometric orientations of bicrystals are 26° 62 <001> Σ13 and 16° 26 <001> Σ25. The grain boundary planes are {510} and {710} respectively. Small deviations of the order of 0,15° to the exact coincidence orientation are observed. The thermal treatments were carried out in a high purity argon flow at 450°C, 750°C and 950°C for 2, 24, 48, 75 and 92h.