| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-178 - C6-178 | |
| DOI | https://doi.org/10.1051/jphyscol:1989632 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-178-C6-178
DOI: 10.1051/jphyscol:1989632
1 Laboratoire de Physique des Matériaux, CNRS, 1, Place A. Briand, F-92195 Meudon Cedex, France
2 Laboratoire de physique des Solides, CNRS, 1, Place A. Briand, F-92195 Meudon Cedex, France
International Workshop
J. Phys. Colloques 50 (1989) C6-178-C6-178
DOI: 10.1051/jphyscol:1989632
BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION
A. DJEMEL1, J. CASTAING1 et J. CHEVALLIER21 Laboratoire de Physique des Matériaux, CNRS, 1, Place A. Briand, F-92195 Meudon Cedex, France
2 Laboratoire de physique des Solides, CNRS, 1, Place A. Briand, F-92195 Meudon Cedex, France
Abstract
We use cathodoluminescence (CL) in a scanning electron microscope to study deep level recombination in semi-insulating GaAs. Two kinds of specimens were examined (i) as-grown crystals before and after hydrogenation, (ii) crystals deformed at high temperatures before and after hydrogenation. Hydrogen is introduced into the crystal using a R.F. hydrogen plasma (T = 240°C, t = 90 min.). A consequence of the introduction of hydrogen is a substantial increase of the light emitted under the electron beam, due to a passivation of deep level centers