| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-180 - C6-180 | |
| DOI | https://doi.org/10.1051/jphyscol:1989634 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-180-C6-180
DOI: 10.1051/jphyscol:1989634
1 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
2 Weizmann Institute of Science, Dept. of Structural Chemistry, Rehovot 76100, Israel
International Workshop
J. Phys. Colloques 50 (1989) C6-180-C6-180
DOI: 10.1051/jphyscol:1989634
OBSERVATION OF GETTERING PHENOMENA AT DEFECTS IN GaAs BY SIMULTANEOUS EBIC/CL MEASUREMENTS
M. ECKSTEIN1, A. JAKUBOWICZ2, M. BODE1 et H.-U. HABERMEIER11 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
2 Weizmann Institute of Science, Dept. of Structural Chemistry, Rehovot 76100, Israel
Abstract
Both Electron-Beam-Induced Current (EBIC) and Cathodoluminescence (CL) offer the possibility to study defects in III-V compound semiconductors with a lateral resolution of about 1µm.