| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-168 - C6-168 | |
| DOI | https://doi.org/10.1051/jphyscol:1989625 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-168-C6-168
DOI: 10.1051/jphyscol:1989625
Institute for Materials Research, Tohoku University, Sendai 980, Japan
International Workshop
J. Phys. Colloques 50 (1989) C6-168-C6-168
DOI: 10.1051/jphyscol:1989625
TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si
T. SEKIGUCHI, Y. MIYAMURA et K. SUMINOInstitute for Materials Research, Tohoku University, Sendai 980, Japan
Abstract
The interactions of dislocations with impurities and/or point defects in GaAs and Si crystals with various thermal histories are investigated by observing the temperature dependence of -the CL and EBIC images. Since the impurity distribution around a dislocation changes drastically with temperature, the specimens with different thermal histories show various CL or EBIC contrasts reflecting the distribution of impurities and/or point defects.