MECHANISMS OF LASER INDUCED CRYSTALLIZATION OF SEMICONDUCTORS p. C4-1 J. M. Poate DOI: https://doi.org/10.1051/jphyscol:1980401 AbstractPDF (913.4 KB)
DENSE-PLASMA DYNAMICS DURING PULSED LASER ANNEALING p. C4-7 Ellen J. Yoffa DOI: https://doi.org/10.1051/jphyscol:1980402 AbstractPDF (398.1 KB)
IMPORTANCE OF THE PLASMA TO PULSED LASER ANNEALING p. C4-15 J. A. Van Vechten DOI: https://doi.org/10.1051/jphyscol:1980403 AbstractPDF (662.8 KB)
NON-THERMAL LASER INDUCED ORDERING AND PLASMA LIFE TIME p. C4-25 R. Tsu and S.S. Jha DOI: https://doi.org/10.1051/jphyscol:1980404 AbstractPDF (351.5 KB)
HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION p. C4-31 J.R. Meyer, F.J. Bartoli and M.R. Kruer DOI: https://doi.org/10.1051/jphyscol:1980405 AbstractPDF (323.1 KB)
COMMENTS ON THE MECHANISMS OPERATING IN LASER ANNEALING p. C4-37 G. Vitali and M. Bertolotti DOI: https://doi.org/10.1051/jphyscol:1980406 AbstractPDF (667.0 KB)
SOLUBILITY LIMIT OF DOPANTS IN SILICON IRRADIATED BY RUBY LASER p. C4-41 Fogarassy E., Stuck R., Grob J.J., Grob A. and Siffert P. DOI: https://doi.org/10.1051/jphyscol:1980407 AbstractPDF (246.0 KB)
CO2-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION p. C4-47 H. Boroffka, E.F. Krimmel, H. Runge and R. Langfeld DOI: https://doi.org/10.1051/jphyscol:1980408 AbstractPDF (796.1 KB)
NUCLEATION THEORY AND DYMAMICS OF FIRST-ORDER PHASE TRANSITIONS NEAR A CRITICAL POINT p. C4-51 K. Binder DOI: https://doi.org/10.1051/jphyscol:1980409 AbstractPDF (1.976 MB)
LASER INDUCED OSCILLATORY PHENOMENA IN AMORPHOUS GeSe2 FILMS p. C4-63 J. Hajtó DOI: https://doi.org/10.1051/jphyscol:1980410 AbstractPDF (2.709 MB)
LASER ANNEALING OF ELEMENTAL AND COMPOUND SEMICONDUCTOR FILMS p. C4-71 R. Andrew, L. Baufay, L.D. Laude, M. Lovato and M. Wautelet DOI: https://doi.org/10.1051/jphyscol:1980411 AbstractPDF (1.566 MB)
IS LASER-INDUCED NUCLEATION DUE TO A BULK LONG-WAVELENGTH INSTABILITY ? p. C4-75 Binder, K. DOI: https://doi.org/10.1051/jphyscol:1980412 AbstractPDF (199.2 KB)
CHANGES IN SURFACE TOPOGRAPHY AFTER PULSED LASER ANNEAL OF SILICON p. C4-79 C. Hill and D.J. Godfrey DOI: https://doi.org/10.1051/jphyscol:1980413 AbstractPDF (2.911 MB)
TIME DEPENDENCE OF THE NUCLEATION OF SLIP DISLOCATIONS DURING LASER ANNEALING OF SILICON p. C4-85 G.A. Rozgonyi and H. Baumgart DOI: https://doi.org/10.1051/jphyscol:1980414 AbstractPDF (2.067 MB)
SUBSTRATE ORIENTATION EFFECT ON THE REGROWTH OF AMORPHOUS SILICON BY LASER PULSES p. C4-89 D. Hoonhout, T. de Jong and F.W. Saris DOI: https://doi.org/10.1051/jphyscol:1980415 AbstractPDF (122.7 KB)
NONEQUILIBRIUM SOLUBILITY AND SEGREGATION IN ION IMPLANTED, LASER ANNEALED SILICON p. C4-91 S.R. Wilson, C.W. White, F.W. Young, Jr., B.R. Appleton and J. Narayan DOI: https://doi.org/10.1051/jphyscol:1980416 AbstractPDF (1.081 MB)
LASER AND ELECTRON-BEAM INDUCED FORMATION OF METAL-SILICIDES p. C4-97 F. Nava, G. Majni, A. Luches, V. Nassisi and E. Janniti DOI: https://doi.org/10.1051/jphyscol:1980417 AbstractPDF (167.4 KB)
CONCEPTS IN THE THEORY OF NONEQUILIBRIUM PHASE TRANSITIONS p. C4-101 G. Dewel, P. Borckmans and D. Walgraef DOI: https://doi.org/10.1051/jphyscol:1980418 AbstractPDF (424.2 KB)
COMMENTS ON THE MECHANISMS OF LASER ANNEALING p. C4-109 D. Turnbull DOI: https://doi.org/10.1051/jphyscol:1980419 AbstractPDF (122.9 KB)
LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE p. C4-111 V.V. Makarov, T. Tuomi, K. Naukkarinen, M. Luomajärvi and M. Riihonen DOI: https://doi.org/10.1051/jphyscol:1980420 AbstractPDF (1.085 MB)
