| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-47 - C4-49 | |
| DOI | https://doi.org/10.1051/jphyscol:1980408 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-47-C4-49
DOI: 10.1051/jphyscol:1980408
1 Forschungslaboratorien der Siemens AG D-8000 München 83, Germany
2 Institut für Kernphysik, Universität Frankfurt, Germany
J. Phys. Colloques 41 (1980) C4-47-C4-49
DOI: 10.1051/jphyscol:1980408
CO2-LASER ANNEALING OF BURIED LAYERS PRODUCED BY MEV ION IMPLANTATION
H. Boroffka1, E.F. Krimmel1, H. Runge1 et R. Langfeld21 Forschungslaboratorien der Siemens AG D-8000 München 83, Germany
2 Institut für Kernphysik, Universität Frankfurt, Germany
Abstract
Buried layers were obtained by implanting 3 MeV As++-ions into Si-wafers. Annealing of these layers can be achieved with Q-switched CO2-laser irradiation, but not with Q-switches Nd-YAG- or ruby lasers. It is shown that laser annealing shifts the doping profile towards the surface.