| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|
|---|---|---|
| Page(s) | C4-111 - C4-112 | |
| DOI | https://doi.org/10.1051/jphyscol:1980420 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-111-C4-112
DOI: 10.1051/jphyscol:1980420
1 Laboratory of Physics, Helsinki University of Technology, SF-02150 Espoo 15, Finland
2 M.I. Kalinin Leningrad Polytechnic Institute, USSR
3 Department of Physics, University of Helsinki, SF-00170 Helsinki 17, Finland
J. Phys. Colloques 41 (1980) C4-111-C4-112
DOI: 10.1051/jphyscol:1980420
LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE
V.V. Makarov1, 2, T. Tuomi1, K. Naukkarinen1, M. Luomajärvi3 et M. Riihonen31 Laboratory of Physics, Helsinki University of Technology, SF-02150 Espoo 15, Finland
2 M.I. Kalinin Leningrad Polytechnic Institute, USSR
3 Department of Physics, University of Helsinki, SF-00170 Helsinki 17, Finland
Without abstract
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