| Issue |
J. Phys. Colloques
Volume 41, Number C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-31 - C4-36 | |
| DOI | https://doi.org/10.1051/jphyscol:1980405 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-31-C4-36
DOI: 10.1051/jphyscol:1980405
Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
J. Phys. Colloques 41 (1980) C4-31-C4-36
DOI: 10.1051/jphyscol:1980405
HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION
J.R. Meyer, F.J. Bartoli et M.R. KruerNaval Research Laboratory, Washington, D.C. 20375, U.S.A.
Abstract
A theory for optical heating in semiconductors has been formulated in terms of the coupled diffusion equations for heat and excess carriers. Closed-form solutions for the region near the surface of the material have been obtained in the general case where the optical and transport parameters of the semiconductor are allowed to depend in an arbitrary way on temperature and laser-generated carrier density. The theory is applied here to heating of crystalline and amorphous silicon by Q-switched pulses of 0.53 µm and 0.69 µm radiation.