| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-7 - C4-13 | |
| DOI | https://doi.org/10.1051/jphyscol:1980402 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-7-C4-13
DOI: 10.1051/jphyscol:1980402
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
J. Phys. Colloques 41 (1980) C4-7-C4-13
DOI: 10.1051/jphyscol:1980402
DENSE-PLASMA DYNAMICS DURING PULSED LASER ANNEALING
Ellen J. YoffaIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
Abstract
The flow of energy from the laser to the lattice during pulsed laser annealing of Si is examined, with particular attention paid to the influence of the dense plasma of hot, photoexcited carriers on the manner in which this energy transfer occurs. Consideration of carrier thermalization and recombination at high carrier densities suggests that under certain conditions carrier diffusion may increase the spatial extent to which the lattice is heated and consequently decrease the rate of temperature rise near the surface.