Le Journal de Physique Colloques

MODELS OF THE DISLOCATION STRUCTURE p. C6-1

H. Alexander

DOI: https://doi.org/10.1051/jphyscol:1979601

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LATTICE IMAGES OF DISLOCATIONS IN GERMANIUM p. C6-7

A. Bourret et J. Desseaux

DOI: https://doi.org/10.1051/jphyscol:1979602

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DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPY p. C6-11

D.J.H. Cockayne et A. Hons

DOI: https://doi.org/10.1051/jphyscol:1979603

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ELECTRICAL RECOMBINATION BEHAVIOUR AT DISLOCATIONS IN GALLIUM PHOSPHIDE AND SILICON p. C6-19

G.R. Booker, A. Ourmazd et D.B. Darby

DOI: https://doi.org/10.1051/jphyscol:1979604

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HIGH VOLTAGE ELECTRON MICROSCOPY AND SCANNING ELECTRON MICROSCOPY (EBIC MODE) OF THE SAME DISLOCATION p. C6-23

J. Heydenreich, H. Blumtritt, R. Gleichmann et H. Johansen

DOI: https://doi.org/10.1051/jphyscol:1979605

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RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS p. C6-27

P.B. Hirsch

DOI: https://doi.org/10.1051/jphyscol:1979606

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THEORETICAL CALCULATIONS OF ELECTRON STATES ASSOCIATED WITH DISLOCATIONS p. C6-33

R. Jones

DOI: https://doi.org/10.1051/jphyscol:1979607

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EFFECT OF DISORDER AND LONG RANGE STRAIN FIELD ON THE ELECTRON STATES p. C6-39

A. Claesson

DOI: https://doi.org/10.1051/jphyscol:1979608

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EFFECT OF DISLOCATION DISSOCIATION ON THE LOCALIZED ELECTRON AND HOLE STATES AT SCREW DISLOCATIONS IN GERMANIUM p. C6-43

H. Teichler

DOI: https://doi.org/10.1051/jphyscol:1979609

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SCATTERING OF CHARGE-CARRIERS BY DISLOCATIONS p. C6-47

E. Gerlach

DOI: https://doi.org/10.1051/jphyscol:1979610

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INFLUENCE OF DISLOCATIONS ON THE HALL EFFECT IN SILICON AND GERMANIUM p. C6-51

W. Schröter

DOI: https://doi.org/10.1051/jphyscol:1979611

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APPLICATION OF EPR AND ELECTRIC MEASUREMENTS TO STUDY DISLOCATION ENERGY SPECTRUM IN SILICON p. C6-59

V.A. Grazhulis

DOI: https://doi.org/10.1051/jphyscol:1979612

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DISLOCATION ELECTRONIC STATES FROM SCHOTTKY DIODES IN SILICON p. C6-63

S. Mantovani et E. Mazzega

DOI: https://doi.org/10.1051/jphyscol:1979613

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DISLOCATION DEFECT STATES IN SILICON p. C6-67

J.R. Patel et L.C. Kimerling

DOI: https://doi.org/10.1051/jphyscol:1979614

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HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES p. C6-71

P. Gondi, A. Cavallini et A. Castaldini

DOI: https://doi.org/10.1051/jphyscol:1979615

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ELECTRICAL EFFECTS OF DISLOCATIONS IN GALLIUM ARSENIDE p. C6-75

D. Gwinner et R. Labusch

DOI: https://doi.org/10.1051/jphyscol:1979616

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RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE PRESENCE OF DISLOCATIONS IN SEMICONDUCTORS p. C6-81

R. Labusch

DOI: https://doi.org/10.1051/jphyscol:1979617

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PHOTOCONDUCTIVITY PRODUCED BY POLARIZED LIGHT IN PLASTICALLY DEFORMED Ge p. C6-87

E. Kamieniecki

DOI: https://doi.org/10.1051/jphyscol:1979618

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OPTICAL PROPERTIES OF II-VI COMPOUNDS WITH DISLOCATIONS p. C6-91

N.V. Klassen et Yu.A. Ossipyan

DOI: https://doi.org/10.1051/jphyscol:1979619

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SPIN EFFECTS IN ELECTRON TRANSITIONS VIA DISLOCATION STATES IN SILICON p. C6-95

T. Figielski

DOI: https://doi.org/10.1051/jphyscol:1979620

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EPR OF DISLOCATIONS IN SILICON p. C6-101

E. Weber et H. Alexander

DOI: https://doi.org/10.1051/jphyscol:1979621

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MAGNETIC PROPERTIES OF DISLOCATIONS, SPIN POLARONS p. C6-107

J.F. Gouyet

DOI: https://doi.org/10.1051/jphyscol:1979622

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KINK FORMATION AND MIGRATION AS DEPENDENT ON THE FERMI LEVEL p. C6-111

P. Haasen

DOI: https://doi.org/10.1051/jphyscol:1979623

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A MECHANISM FOR THE EFFECT OF DOPING ON DISLOCATION MOBILITY p. C6-117

P.B. Hirsch

DOI: https://doi.org/10.1051/jphyscol:1979624

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STATISTICS OF KINK FORMATION ON DISSOCIATED DISLOCATIONS p. C6-123

H.J. Möller

DOI: https://doi.org/10.1051/jphyscol:1979625

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MOTION OF PARTIAL DISLOCATIONS p. C6-127

H. Gottschalk

DOI: https://doi.org/10.1051/jphyscol:1979626

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MEASUREMENTS OF THE DISLOCATION VELOCITIES IN SILICON p. C6-133

A. George

DOI: https://doi.org/10.1051/jphyscol:1979627

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DISLOCATION MOTION NEAR A SURFACE p. C6-139

H.J. Möller et H. Ewaldt

DOI: https://doi.org/10.1051/jphyscol:1979628

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VELOCITIES AND INTERNAL FRICTION OF DISLOCATIONS IN III-V COMPOUNDS p. C6-143

T. Ninomiya

DOI: https://doi.org/10.1051/jphyscol:1979629

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DISLOCATION MOBILITY AND MECHANICAL BEHAVIOUR OF Si CRYSTALS p. C6-147

K. Sumino

DOI: https://doi.org/10.1051/jphyscol:1979630

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DETERMINATION OF SLIP PLANES IN Cd_xHg_(1-x)Te BY ETCHING OF DISLOCATIONS INTRODUCED BY MICROHARDNESS INDENTATIONS p. C6-151

M. Brown et A.F.W. Willoughby

DOI: https://doi.org/10.1051/jphyscol:1979631

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EXPERIMENTAL EVIDENCE FOR AN ASYMMETRICAL DISLOCATION SLIDE IN INDIUM ANTIMONIDE p. C6-157

J.L. Farvacque et D. Ferre

DOI: https://doi.org/10.1051/jphyscol:1979632

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MOTION OF CHARGED DISLOCATIONS IN SEMICONDUCTORS A^II B^VI p. C6-161

Yu. A. Ossipyan et V.F. Petrenko

DOI: https://doi.org/10.1051/jphyscol:1979633

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PHOTOPLASTIC EFFECT IN CdTe p. C6-169

E.Y. Gutmanas et P. Haasen

DOI: https://doi.org/10.1051/jphyscol:1979634

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CHEMOMECHANICAL EFFECTS IN ZnO p. C6-173

J.S. Ahearn, J.J. Mills et A.R.C. Westwood

DOI: https://doi.org/10.1051/jphyscol:1979635

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DYNAMICAL RECOVERY AND DIFFUSION p. C6-177

H. Siethoff

DOI: https://doi.org/10.1051/jphyscol:1979636

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CALCULATIONS OF DISLOCATION PIPE DIFFUSION p. C6-181

J. Mimkes

DOI: https://doi.org/10.1051/jphyscol:1979637

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DIFFUSION OF GALLIUM IN GERMANIUM ALONG DISLOCATIONS p. C6-185

K. Ahlborn

DOI: https://doi.org/10.1051/jphyscol:1979638

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DEVICE EFFECTS OF DISLOCATIONS p. C6-189

D.B. Holt

DOI: https://doi.org/10.1051/jphyscol:1979639

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POINT DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS p. C6-201

P.M. Petroff

DOI: https://doi.org/10.1051/jphyscol:1979640

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APPLICATION OF DISLOCATION-INDUCED ELECTRIC POTENTIALS IN Si AND Ge p. C6-207

S. Mil'shtein

DOI: https://doi.org/10.1051/jphyscol:1979641

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OBSERVATION OF INDIVIDUAL MISFIT DISLOCATIONS BY HIGH-VOLTAGE ELECTRON MICROSCOPY p. C6-213

H. Strunk, W. Hagen et B.O. Kolbesen

DOI: https://doi.org/10.1051/jphyscol:1979642

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SOME REMARKS TO THE PROBLEM OF THE DISLOCATION LOOPS CREATION IN THE REGION OF INTERFACE p. C6-217

Z. Liliental et J. Auleytner

DOI: https://doi.org/10.1051/jphyscol:1979643

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