MODELS OF THE DISLOCATION STRUCTURE p. C6-1 H. Alexander DOI: https://doi.org/10.1051/jphyscol:1979601 RésuméPDF (2.369 MB)
LATTICE IMAGES OF DISLOCATIONS IN GERMANIUM p. C6-7 A. Bourret et J. Desseaux DOI: https://doi.org/10.1051/jphyscol:1979602 RésuméPDF (1.666 MB)
DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPY p. C6-11 D.J.H. Cockayne et A. Hons DOI: https://doi.org/10.1051/jphyscol:1979603 RésuméPDF (3.348 MB)
ELECTRICAL RECOMBINATION BEHAVIOUR AT DISLOCATIONS IN GALLIUM PHOSPHIDE AND SILICON p. C6-19 G.R. Booker, A. Ourmazd et D.B. Darby DOI: https://doi.org/10.1051/jphyscol:1979604 RésuméPDF (148.2 KB)
HIGH VOLTAGE ELECTRON MICROSCOPY AND SCANNING ELECTRON MICROSCOPY (EBIC MODE) OF THE SAME DISLOCATION p. C6-23 J. Heydenreich, H. Blumtritt, R. Gleichmann et H. Johansen DOI: https://doi.org/10.1051/jphyscol:1979605 RésuméPDF (2.261 MB)
RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS p. C6-27 P.B. Hirsch DOI: https://doi.org/10.1051/jphyscol:1979606 RésuméPDF (309.9 KB)
THEORETICAL CALCULATIONS OF ELECTRON STATES ASSOCIATED WITH DISLOCATIONS p. C6-33 R. Jones DOI: https://doi.org/10.1051/jphyscol:1979607 RésuméPDF (325.8 KB)
EFFECT OF DISORDER AND LONG RANGE STRAIN FIELD ON THE ELECTRON STATES p. C6-39 A. Claesson DOI: https://doi.org/10.1051/jphyscol:1979608 RésuméPDF (135.4 KB)
EFFECT OF DISLOCATION DISSOCIATION ON THE LOCALIZED ELECTRON AND HOLE STATES AT SCREW DISLOCATIONS IN GERMANIUM p. C6-43 H. Teichler DOI: https://doi.org/10.1051/jphyscol:1979609 RésuméPDF (141.5 KB)
SCATTERING OF CHARGE-CARRIERS BY DISLOCATIONS p. C6-47 E. Gerlach DOI: https://doi.org/10.1051/jphyscol:1979610 RésuméPDF (648.4 KB)
INFLUENCE OF DISLOCATIONS ON THE HALL EFFECT IN SILICON AND GERMANIUM p. C6-51 W. Schröter DOI: https://doi.org/10.1051/jphyscol:1979611 RésuméPDF (1009 KB)
APPLICATION OF EPR AND ELECTRIC MEASUREMENTS TO STUDY DISLOCATION ENERGY SPECTRUM IN SILICON p. C6-59 V.A. Grazhulis DOI: https://doi.org/10.1051/jphyscol:1979612 RésuméPDF (186.3 KB)
DISLOCATION ELECTRONIC STATES FROM SCHOTTKY DIODES IN SILICON p. C6-63 S. Mantovani et E. Mazzega DOI: https://doi.org/10.1051/jphyscol:1979613 RésuméPDF (121.7 KB)
DISLOCATION DEFECT STATES IN SILICON p. C6-67 J.R. Patel et L.C. Kimerling DOI: https://doi.org/10.1051/jphyscol:1979614 RésuméPDF (1.613 MB)
HALL EFFECT RESULTS ON Ge DEFORMED AT RELATIVELY LOW TEMPERATURES p. C6-71 P. Gondi, A. Cavallini et A. Castaldini DOI: https://doi.org/10.1051/jphyscol:1979615 RésuméPDF (181.0 KB)
ELECTRICAL EFFECTS OF DISLOCATIONS IN GALLIUM ARSENIDE p. C6-75 D. Gwinner et R. Labusch DOI: https://doi.org/10.1051/jphyscol:1979616 RésuméPDF (206.0 KB)
RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE PRESENCE OF DISLOCATIONS IN SEMICONDUCTORS p. C6-81 R. Labusch DOI: https://doi.org/10.1051/jphyscol:1979617 RésuméPDF (300.4 KB)
PHOTOCONDUCTIVITY PRODUCED BY POLARIZED LIGHT IN PLASTICALLY DEFORMED Ge p. C6-87 E. Kamieniecki DOI: https://doi.org/10.1051/jphyscol:1979618 RésuméPDF (168.0 KB)
OPTICAL PROPERTIES OF II-VI COMPOUNDS WITH DISLOCATIONS p. C6-91 N.V. Klassen et Yu.A. Ossipyan DOI: https://doi.org/10.1051/jphyscol:1979619 RésuméPDF (946.8 KB)
SPIN EFFECTS IN ELECTRON TRANSITIONS VIA DISLOCATION STATES IN SILICON p. C6-95 T. Figielski DOI: https://doi.org/10.1051/jphyscol:1979620 RésuméPDF (273.6 KB)
EPR OF DISLOCATIONS IN SILICON p. C6-101 E. Weber et H. Alexander DOI: https://doi.org/10.1051/jphyscol:1979621 RésuméPDF (313.2 KB)
MAGNETIC PROPERTIES OF DISLOCATIONS, SPIN POLARONS p. C6-107 J.F. Gouyet DOI: https://doi.org/10.1051/jphyscol:1979622 RésuméPDF (108.0 KB)
KINK FORMATION AND MIGRATION AS DEPENDENT ON THE FERMI LEVEL p. C6-111 P. Haasen DOI: https://doi.org/10.1051/jphyscol:1979623 RésuméPDF (2.406 MB)
A MECHANISM FOR THE EFFECT OF DOPING ON DISLOCATION MOBILITY p. C6-117 P.B. Hirsch DOI: https://doi.org/10.1051/jphyscol:1979624 RésuméPDF (259.4 KB)
STATISTICS OF KINK FORMATION ON DISSOCIATED DISLOCATIONS p. C6-123 H.J. Möller DOI: https://doi.org/10.1051/jphyscol:1979625 RésuméPDF (124.6 KB)
MOTION OF PARTIAL DISLOCATIONS p. C6-127 H. Gottschalk DOI: https://doi.org/10.1051/jphyscol:1979626 RésuméPDF (821.7 KB)
MEASUREMENTS OF THE DISLOCATION VELOCITIES IN SILICON p. C6-133 A. George DOI: https://doi.org/10.1051/jphyscol:1979627 RésuméPDF (1.548 MB)
DISLOCATION MOTION NEAR A SURFACE p. C6-139 H.J. Möller et H. Ewaldt DOI: https://doi.org/10.1051/jphyscol:1979628 RésuméPDF (130.1 KB)
VELOCITIES AND INTERNAL FRICTION OF DISLOCATIONS IN III-V COMPOUNDS p. C6-143 T. Ninomiya DOI: https://doi.org/10.1051/jphyscol:1979629 RésuméPDF (133.2 KB)
DISLOCATION MOBILITY AND MECHANICAL BEHAVIOUR OF Si CRYSTALS p. C6-147 K. Sumino DOI: https://doi.org/10.1051/jphyscol:1979630 RésuméPDF (208.9 KB)
DETERMINATION OF SLIP PLANES IN CdxHg(1-x)Te BY ETCHING OF DISLOCATIONS INTRODUCED BY MICROHARDNESS INDENTATIONS p. C6-151 M. Brown et A.F.W. Willoughby DOI: https://doi.org/10.1051/jphyscol:1979631 RésuméPDF (868.9 KB)
EXPERIMENTAL EVIDENCE FOR AN ASYMMETRICAL DISLOCATION SLIDE IN INDIUM ANTIMONIDE p. C6-157 J.L. Farvacque et D. Ferre DOI: https://doi.org/10.1051/jphyscol:1979632 RésuméPDF (115.1 KB)
MOTION OF CHARGED DISLOCATIONS IN SEMICONDUCTORS AII BVI p. C6-161 Yu. A. Ossipyan et V.F. Petrenko DOI: https://doi.org/10.1051/jphyscol:1979633 RésuméPDF (307.3 KB)
PHOTOPLASTIC EFFECT IN CdTe p. C6-169 E.Y. Gutmanas et P. Haasen DOI: https://doi.org/10.1051/jphyscol:1979634 RésuméPDF (731.7 KB)
CHEMOMECHANICAL EFFECTS IN ZnO p. C6-173 J.S. Ahearn, J.J. Mills et A.R.C. Westwood DOI: https://doi.org/10.1051/jphyscol:1979635 RésuméPDF (197.2 KB)
DYNAMICAL RECOVERY AND DIFFUSION p. C6-177 H. Siethoff DOI: https://doi.org/10.1051/jphyscol:1979636 RésuméPDF (123.8 KB)
CALCULATIONS OF DISLOCATION PIPE DIFFUSION p. C6-181 J. Mimkes DOI: https://doi.org/10.1051/jphyscol:1979637 RésuméPDF (749.4 KB)
DIFFUSION OF GALLIUM IN GERMANIUM ALONG DISLOCATIONS p. C6-185 K. Ahlborn DOI: https://doi.org/10.1051/jphyscol:1979638 RésuméPDF (192.9 KB)
DEVICE EFFECTS OF DISLOCATIONS p. C6-189 D.B. Holt DOI: https://doi.org/10.1051/jphyscol:1979639 RésuméPDF (4.595 MB)
POINT DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS p. C6-201 P.M. Petroff DOI: https://doi.org/10.1051/jphyscol:1979640 RésuméPDF (1.564 MB)
APPLICATION OF DISLOCATION-INDUCED ELECTRIC POTENTIALS IN Si AND Ge p. C6-207 S. Mil'shtein DOI: https://doi.org/10.1051/jphyscol:1979641 RésuméPDF (471.2 KB)
OBSERVATION OF INDIVIDUAL MISFIT DISLOCATIONS BY HIGH-VOLTAGE ELECTRON MICROSCOPY p. C6-213 H. Strunk, W. Hagen et B.O. Kolbesen DOI: https://doi.org/10.1051/jphyscol:1979642 RésuméPDF (1.437 MB)
SOME REMARKS TO THE PROBLEM OF THE DISLOCATION LOOPS CREATION IN THE REGION OF INTERFACE p. C6-217 Z. Liliental et J. Auleytner DOI: https://doi.org/10.1051/jphyscol:1979643 RésuméPDF (721.6 KB)
