| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-515 - C4-518 | |
| DOI | https://doi.org/10.1051/jphyscol:19884107 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-515-C4-518
DOI: 10.1051/jphyscol:19884107
Plessey Research Caswell Ltd, Towcester, Northants, GB-NN12 8EQ, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-515-C4-518
DOI: 10.1051/jphyscol:19884107
2D BORON DISTRIBUTIONS AFTER ION IMPLANT AND TRANSIENT ANNEAL
P.J. PEARSON et C. HILLPlessey Research Caswell Ltd, Towcester, Northants, GB-NN12 8EQ, Great-Britain
Abstract
A novel 2D profiling technique of high spatial resolution ( 20 x 20 nm) is used to measure the asymmetry in implanted and transiently annealed boron implants caused by 7° tilt of VLSI wafers during implantation.