J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-383 - C4-386|
J. Phys. Colloques 42 (1981) C4-383-C4-386
COMPARISON OF OPTICALLY INDUCED LOCALIZED STATES IN CHALCOGENIDE GLASSES AND THEIR CRYSTALLINE COUNTERPARTSS.G. Bishop, B.V. Shanabrook, U. Strom and P.C. Taylor
Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
The below-gap peaks observed in the PLE spectra for deep PL bands in the minerals orpiment and realgar are attributed to strong impurity absorption bands, possibly associated with the high concentrations of 3d transition metals (e.g. Mn and Fe) detected by ESR. It is suggested that the weak below-gap tails in the PLE spectra of chalcogenide glasses and synthetic arsenic chalcogenide crystals have the same origin, but that impurity concentrations are much lower in these materials. Optically induced ESR spectra observed in crystalline arsenic chalcogenides are ascribed to paramagnetic Cu2+ ions rather than to the optically induced paramagnetic intrinsic defects associated with major constituent atoms as observed in chalcogenide glasses.