| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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| Page(s) | C4-963 - C4-966 | |
| DOI | https://doi.org/10.1051/jphyscol:19814211 | |
J. Phys. Colloques 42 (1981) C4-963-C4-966
DOI: 10.1051/jphyscol:19814211
EFFECT OF COMPOSITION AND STRUCTURE ON TRANSPORT PROPERTIES OF CHALCOGENIDE GLASSES
A.M. Andriesh, V.S. Gerasimenko, Yu.N. Ivaschenko, M.A. Iovu, M.S. Iovu, A.V. Mironos, V.L. Smirnov, M.R. Chernii and S.D. ShutovInstitute of Applied Physics (Kishinev, 277028), Engineering Physics Institute (Moscow, 115409), U.R.S.S.
Abstract
The effect of preparation regime and molecular composition on dispersive transport properties of amorphous chalcogenide films of As-Se, As2S3-Sb2S3 and As2S3 : Sn has been investigated by time-of-flight method. Hole transit time (corresponding to drift mobility) in the system As-Se was found to be dependent on preparation regime, this dependence being mostly exhibited in non-stoichiometric films. In As2S3-Sb2S3 system the transit time and its activation energy are gradually decreased with increasing of Sb2S3 content. The transit time of As2S3 films doped with Sn up to 0.3 at.% is decreased by as much as 3 to 4 orders of magnitude at room temperature and in the interval from 295 to 360 K increases with temperature. The results are discussed in frames of a model for anomalous charge carrier drift controlled by capture in a system of energy distributed traps.